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公开(公告)号：US5278858A
公开(公告)日：1994-01-11
申请号：US915512
申请日：1992-07-20
CPC分类号： H01S5/227 , H01S5/2277
摘要： The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.
摘要翻译： 磷化铟或砷化镓双通道半导体激光器的通电电流通过近，远电流的阻挡装置被限制在激光条纹内。 近电流阻塞装置由形成在限定条纹的两个横向通道中的阻挡结形成。 远电流阻挡装置由在横向沟道被蚀刻之前外延生长的铁掺杂半绝缘层形成。 特别的应用是制造用于光纤链路光放大器的泵激光器。
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公开(公告)号：US6052398A
公开(公告)日：2000-04-18
申请号：US53704
申请日：1998-04-02
申请人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
发明人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
CPC分类号： H01S5/18305 , H01S2302/00 , H01S5/18308 , H01S5/18394 , H01S5/3095
摘要： Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
摘要翻译： 激光器的两个半导体层形成隧道结，能够使电流泵浦激光从N掺杂半导体布拉格反射镜传递到属于光放大结构的P掺杂注入层。 布拉格反射镜与具有相同掺杂的相同类型的另一个反射镜配合，以在激光器的光腔中包括所述结构。 在一个变型中，隧道结可以被埋置和定位，以便构成用于所述泵送电流的约束装置。 激光可用于光纤通信网络。
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公开(公告)号：US5215939A
公开(公告)日：1993-06-01
申请号：US832024
申请日：1992-02-06
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , Y10S148/09 , Y10S148/10
摘要： In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.
摘要翻译： 在制造平面埋入异质结激光器的方法中，在蚀刻以限定基板上的激光条纹之后，不仅在条纹侧面而且在上方都通过非选择性生长方法形成围绕条纹的横向层 它创建一个寄生投影。 然后通过选择性地攻击在该蚀刻之前在条纹上方沉积的剥离条纹从衬底分离之后，去除该突起。 形成用于此目的的攻击介质的通道。 本发明可以特别应用于光纤传输系统的制造。
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4.发明授权
公开(公告)号：US4692207A
公开(公告)日：1987-09-08
申请号：US917860
申请日：1986-10-14
IPC分类号： H01L27/14 , H01L33/00 , H01S5/00 , H01S5/026 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01S5/0264
摘要： Process for producing an integrated laser-photodetector structure.A buffer layer and a double heterostructure are deposited on a substrate. Part of the double heterostructure is etched to form a cleaved face and to free the buffer layer. On the latter is formed a photodetector, e.g. with the aid of a Schottky contact.Application to the production of light sources for optical telecommunications.
摘要翻译： 一种集成激光光电探测器结构的制造方法。 在衬底上沉积缓冲层和双异质结构。 蚀刻部分双异质结构以形成切割面并释放缓冲层。 在其上形成光电检测器，例如。 借助于肖特基的接触。 适用于光通信光源的生产。
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5.发明授权
公开(公告)号：US4766472A
公开(公告)日：1988-08-23
申请号：US2407
申请日：1987-01-05
CPC分类号： H01S5/026 , H01L27/15 , H01S5/0208
摘要： A monolithic semiconductor structure of a laser and a field effect transistor applicable to telecommunications comprises, on a semiinsulating substrate, a semiconductor layer of Ga.sub.1-x Al.sub.x As, a N-doped semiconductor layer of Ga.sub.1-y Al.sub.y As, a semiconductor layer of Ga.sub.1-z Al.sub.z As, in which x and z vary from 0.2 to 0.7 and y from 0 to 0.15 and a GaAs semiconductor layer. In these four layers are formed one type P region and two type N regions, the type P region and one of the type N regions defining between them the active zone of the laser and the two type N regions defining between them the active zone of the transistor, respectively forming the transistor source and drain. The P region of the laser is equipped with an electrode and the transistor source and drain with ohmic contacts. A process for making the structure as also disclosed.
摘要翻译： 可应用于通信的激光器和场效应晶体管的单片半导体结构在半绝缘衬底上包括Ga 1-x Al x As的半导体层，Ga 1-y Al y As的N掺杂半导体层，Ga 1-z Al zAs的半导体层， 其中x和z从0.2变化到0.7，y从0到0.15以及GaAs半导体层。 在这四个层中形成一个P型区域和两个N型区域，P型区域和N型区域中的一个在它们之间限定激光器的有效区域和两个N型区域之间限定它们的有效区域 晶体管分别形成晶体管源极和漏极。 激光器的P区域配备有电极，晶体管源极和漏极具有欧姆接触。 还公开了制造结构的方法。
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公开(公告)号：US06411763B1
公开(公告)日：2002-06-25
申请号：US09401295
申请日：1999-09-23
IPC分类号： G02B610
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12121 , G02B2006/12142 , H01S5/0265
摘要： An integrated optical component having a first section (S1) including a wave guide (10) perpendicular to an output facet (P) of the component, a termination (T) of the wave guide being coupled to this facet, and including a second section (S2) upstream from the first section and capable of being interfered with by the signal reflected by the said facet and guided by the wave guide. The guide termination (T) includes an inclined guiding section (13) and a laterally non-guiding section (14) leading to this facet (P).
摘要翻译： 一种具有第一部分（S1）的集成光学部件，包括垂直于所述部件的输出小平面（P）的波导（10），所述波导的终端（T）耦合到所述小面，并且包括第二部分 （S2），并且能够被所述小面反射并被波导引导的信号所干扰。 引导终端（T）包括通向该小平面（P）的倾斜引导部分（13）和横向非引导部分（14）。
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