摘要:
A lithographic apparatus includes a radiation system that includes a source for producing a radiation beam, a contaminant trap arranged in a path of the radiation beam, and an illumination system configured to condition the radiation beam produced by the source, and a support for supporting a patterning device. The patterning device serves to impart the conditioned radiation beam with a pattern in its cross-section. The apparatus also includes a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate. The contaminant trap includes a plurality of foils that define channels that are arranged substantially parallel to the direction of propagation of the radiation beam. The trap is provided with a gas supply system that is arranged to inject gas into at least one of the channels of the trap.
摘要:
A lithographic apparatus includes a source for generating radiation, an illumination system for conditioning the radiation, a patterning device for patterning the conditioned radiation, and a projection system for projecting the patterned radiation onto a target portion of a substrate. The illumination system includes a debris mitigating system for mitigating debris particles that are released with the generation of radiation, and an optical system for collecting the radiation. The debris mitigation system is arranged to directly evaporate the debris particles, or to directly charge the debris particles, or to directly produce a plasma out of the debris particles, or any combination thereof, in a path along which the radiation propagates from the source to the optical system.
摘要:
A lithographic projection apparatus for EUV lithography includes a foil trap. The foil trap forms an open structure after the EUV source to let the EUV radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the EUV radiation can be transferred on debris present in the EUV beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced.
摘要:
A lithographic projection apparatus for EUV lithography includes a foil trap, or channel barrier. The foil trap forms an open structure after the source to let the radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the radiation can be transferred on debris present in the beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced. The foil trap may be alternately rotated around the optical axis in a first direction and a second direction opposite the first direction.
摘要:
A lithographic apparatus includes a radiation system for providing a beam of radiation. The radiation system includes at least one of a contaminant trap for trapping material emanating from the radiation source and a collector for collecting the beam of radiation. The at least one of the contaminant trap and the collector includes an element arranged in the path of the radiation beam on which the material emanating from the radiation source can deposit during propagation of the radiation beam in the radiation system. At least a part of the element disposed in the path of the radiation beam has a surface that has a highly specular grazing incidence reflectivity to reduce the absorption of the radiation beam in a direction of propagation of the radiation beam substantially non-parallel to the surface of the element, so that a thermal load experienced by the element is reduced.
摘要:
A lithographic apparatus includes a source for generating radiation, an illumination system for conditioning the radiation, a patterning device for patterning the conditioned radiation, and a projection system for projecting the patterned radiation onto a target portion of a substrate. The illumination system includes a debris mitigating system for mitigating debris particles that are released with the generation of radiation, and an optical system for collecting the radiation. The debris mitigation system is arranged to directly evaporate the debris particles, or to directly charge the debris particles, or to directly produce a plasma out of the debris particles, or any combination thereof, in a path along which the radiation propagates from the source to the optical system.
摘要:
A radiation system includes a contamination barrier, e.g., a foil trap, between a collector, for example a normal incidence collector, and a radiation source, such that radiation coming from the source passes the foil trap twice. The radiation passes the contamination barrier once before hitting the collector and a second time after reflection by the collector. The foil trap includes lamellas that are parallel to both the radiation coming from the light source, and to the radiation reflected by the collector. The radiation is thus not obstructed by the foil trap. In this way, a normal incidence collector, which is used with a plasma produced source, can be protected from debris coming from a EUV source.
摘要:
A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.
摘要:
An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm.
摘要:
A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.