公开(公告)号：US20220393078A1

公开(公告)日：2022-12-08

申请号：US17337370

申请日：2021-06-02

Applicant: Lextar Electronics Corporation

Inventor： Kai-Hung CHENG ,  Fu-Han HO

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/46 ,  H01L33/10 ,  H01L33/60

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

公开(公告)号：US20240128412A1

公开(公告)日：2024-04-18

申请号：US18398192

申请日：2023-12-28

Applicant: Lextar Electronics Corporation

Inventor： Kai-Hung CHENG ,  Fu-Han HO

IPC: H01L33/48 ,  H01L33/10 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/10 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

公开(公告)号：US20220103726A1

公开(公告)日：2022-03-31

申请号：US17037738

申请日：2020-09-30

Applicant: Lextar Electronics Corporation

Inventor： Kai-Hung CHENG ,  Fu-Han HO

IPC: H04N5/225 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/18

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

公开(公告)号：US20230137017A1

公开(公告)日：2023-05-04

申请号：US17868689

申请日：2022-07-19

Applicant: Lextar Electronics Corporation

Inventor： Fu-Han HO

IPC: G01S7/499 ,  G02B27/28 ,  G01S17/04 ,  G01S7/481

Abstract: An optical activity detecting device is provided. The optical activity detecting device is adapted to detect an object. The optical activity detecting device includes a light source, a filter, a first polarizer, a second polarizer, a first compensation film and a first detector. The light source provides a light beam. The light beam travels from the light source, passes through the filter and the first polarizer, and enters the object. At least a portion of the light beam travels from the object, passes through the second polarizer and the first compensation film and is received by the first detector.

公开(公告)号：US20220268690A1

公开(公告)日：2022-08-25

申请号：US17244912

申请日：2021-04-29

Applicant: Lextar Electronics Corporation

Inventor： Fu-Han HO ,  Kai-Hung CHENG

IPC: G01N21/17

Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.