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公开(公告)号:US20240315615A1
公开(公告)日:2024-09-26
申请号:US18610147
申请日:2024-03-19
Applicant: Lextar Electronics Corporation
Inventor: Kai-Hung CHENG , Ku-Cheng LIN , Chun-Min LIN , Ke-Wei LIU
IPC: A61B5/1455
CPC classification number: A61B5/14552
Abstract: A detection element of biological subcutaneous features and a wearable device thereof are provided. The element for detecting biological subcutaneous features has a substrate, a light-detecting semiconductor chip, a grid structure, and a cover. The light-detecting semiconductor chip is located on the substrate for detecting red light or near-infrared light signals. The grid structure including a plurality of opaque light-absorbing blocking walls is located on the light-detecting semiconductor chip for blocking side light and increasing the proportion of near-vertical incident light. The cover is located on the grid structure and serves as a protection lid. The wearable device for detecting biological subcutaneous features has more than one light source of red light or near-infrared light and a plurality of detection elements. The arrangement of the opaque light-absorbing blocking walls that are parallel to each other are substantially parallel to the light-emitting directions of the light source.
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公开(公告)号:US20220268690A1
公开(公告)日:2022-08-25
申请号:US17244912
申请日:2021-04-29
Applicant: Lextar Electronics Corporation
Inventor: Fu-Han HO , Kai-Hung CHENG
IPC: G01N21/17
Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.
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公开(公告)号:US20220103726A1
公开(公告)日:2022-03-31
申请号:US17037738
申请日:2020-09-30
Applicant: Lextar Electronics Corporation
Inventor: Kai-Hung CHENG , Fu-Han HO
IPC: H04N5/225 , H01L27/146 , H01L31/0232 , H01L31/0203 , H01L31/18
Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.
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公开(公告)号:US20250155609A1
公开(公告)日:2025-05-15
申请号:US18938136
申请日:2024-11-05
Applicant: Lextar Electronics Corporation
Inventor: Kai-Hung CHENG , Ku-Cheng LIN , Chun-Min LIN , Wei-Yi HSU
Abstract: An optical module is provided. The optical module includes a resin package, a lens and a light emitting element. The resin package has a receiving groove. The lens is disposed on the resin package, and the lens includes a light emitting surface, a light entering surface, and a central axis, wherein the light entering surface has an asymmetric structure. The light emitting element is disposed in the receiving groove, wherein the light emitting element is disposed deviated from the central axis of the lens.
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公开(公告)号:US20220393078A1
公开(公告)日:2022-12-08
申请号:US17337370
申请日:2021-06-02
Applicant: Lextar Electronics Corporation
Inventor: Kai-Hung CHENG , Fu-Han HO
Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.
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公开(公告)号:US20250149851A1
公开(公告)日:2025-05-08
申请号:US18935144
申请日:2024-11-01
Applicant: Lextar Electronics Corporation
Inventor: Yi-Min CHEN , Kai-Hung CHENG , Ming-Jing LEE , Jung-Tang CHU
IPC: H01S5/02255 , H01S5/02208
Abstract: A laser module is provided. The laser module includes a substrate, a laser diode and a diffuser. The substrate has a surface and a base plane, wherein the base plane is parallel to the surface. The laser diode is disposed on the surface. The diffuser is disposed above the laser diode, wherein an included angle is formed between the diffuser and the base plane, and the included angle is greater than 5 degrees.
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公开(公告)号:US20240128412A1
公开(公告)日:2024-04-18
申请号:US18398192
申请日:2023-12-28
Applicant: Lextar Electronics Corporation
Inventor: Kai-Hung CHENG , Fu-Han HO
CPC classification number: H01L33/486 , H01L33/10 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.
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