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    Portable exercising apparatus
    3.
    发明申请
    Portable exercising apparatus 审中-公开
    便携式运动器具

    公开(公告)号：US20060040806A1

    公开(公告)日：2006-02-23

    申请号：US10923028

    申请日：2004-08-23

    申请人： Tai-Yuan Chen

    发明人： Tai-Yuan Chen

    IPC分类号： A63B21/02

    CPC分类号： A63B21/045 ,  A63B21/025 ,  A63B21/4035 ,  A63B21/4045 ,  A63B23/03533 ,  A63B23/12

    摘要： A portable exercising apparatus includes a holder block fixedly mounted inside a housing and defining a transverse track, a slide slidably mounted in the track of the holder block, two pull belts respectively fastened to one end of the track and the slide and extended out of two opposite lateral sides of the housing for pulling by the user to exercise the muscles of the arms, and a damping spring member mounted inside the housing for imparting a damping resistance to the slide upon movement of the slide by the user.

    摘要翻译： 便携式运动装置包括固定地安装在壳体内并限定横向轨道的保持器块，可滑动地安装在保持器块的轨道中的滑块，分别固定到轨道和滑块的一端并滑出两个的两个拉带 壳体的相对的侧面，用于由使用者拉动以锻炼臂的肌肉;以及阻尼弹簧构件，其安装在壳体内部，用于在使用者滑动时移动滑块时给予滑动阻尼。

    [METHOD OF CORRECTING LITHOGRAPHIC PROCESS AND METHOD OF FORMING OVERLAY MARK]
    4.
    发明申请
    [METHOD OF CORRECTING LITHOGRAPHIC PROCESS AND METHOD OF FORMING OVERLAY MARK] 有权
    [校正光刻过程的方法和形成覆盖标记的方法]

    公开(公告)号：US20050208683A1

    公开(公告)日：2005-09-22

    申请号：US10710622

    申请日：2004-07-26

    申请人： Tai-Yuan Chen

    发明人： Tai-Yuan Chen

    IPC分类号： H01L21/027 ,  G03F7/00 ,  G03F7/20 ,  H01L21/203 ,  H01L21/44 ,  H01L21/66 ,  H01L23/544

    CPC分类号： H01L22/20 ,  G03F7/70633 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of correcting a lithographic process is provided. A physical vapor deposition process (PVD) is performed to deposit a film on a wafer. The asymmetrical deposition of the film on the sidewalls of an opening is related to the change of target consumption in the PVD process. Therefore, the positional shift in an overlay mark may change each time. However, a formula relating target consumption with the degree of positional shift can be derived. The formula is recorded by a controller system. A compensation value can be obtained from the controller system and fed back in a subsequent lithographic process. Thereafter, a photoresist layer is formed on the film and a lithographic process is performed to pattern the photoresist. Since the compensation value can be fed back in the lithographic process via the controller system to correct for the positional shift in the overlay mark resulting from target consumption in the PVD process, errors in measuring the overlay mark can be reduced.

    摘要翻译： 提供了一种校正光刻工艺的方法。 进行物理气相沉积工艺（PVD）以在薄片上沉积薄膜。 膜在开口侧壁上的不对称沉积与PVD工艺中目标消耗的变化有关。 因此，覆盖标记中的位置偏移可以每次改变。 然而，可以导出将目标消耗与位置偏移程度相关联的公式。 公式由控制器系统记录。 可以从控制器系统获得补偿值，并在随后的光刻过程中反馈。 此后，在膜上形成光致抗蚀剂层，并执行光刻工艺以对光致抗蚀剂进行图案化。 由于补偿值可以经由控制器系统在光刻处理中反馈，以校正由PVD过程中的目标消耗导致的覆盖标记中的位置偏移，所以可以减少测量重叠标记的误差。

    Method of correcting lithographic process and method of forming overlay mark
    5.
    发明授权
    Method of correcting lithographic process and method of forming overlay mark 有权
    光刻工艺的校正方法及其形成方法

    公开(公告)号：US07232758B2

    公开(公告)日：2007-06-19

    申请号：US10710622

    申请日：2004-07-26

    申请人： Tai-Yuan Chen

    发明人： Tai-Yuan Chen

    IPC分类号： H01L21/302

    CPC分类号： H01L22/20 ,  G03F7/70633 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of correcting a lithographic process is provided. A physical vapor deposition process (PVD) is performed to deposit a film on a wafer. The asymmetrical deposition of the film on the sidewalls of an opening is related to the change of target consumption in the PVD process. Therefore, the positional shift in an overlay mark may change each time. However, a formula relating target consumption with the degree of positional shift can be derived. The formula is recorded by a controller system. A compensation value can be obtained from the controller system and fed back in a subsequent lithographic process. Thereafter, a photoresist layer is formed on the film and a lithographic process is performed to pattern the photoresist. Since the compensation value can be fed back in the lithographic process via the controller system to correct for the positional shift in the overlay mark resulting from target consumption in the PVD process, errors in measuring the overlay mark can be reduced.

    摘要翻译： 提供了一种校正光刻工艺的方法。 进行物理气相沉积工艺（PVD）以在薄片上沉积薄膜。 膜在开口侧壁上的不对称沉积与PVD工艺中目标消耗的变化有关。 因此，覆盖标记中的位置偏移可以每次改变。 然而，可以导出将目标消耗与位置偏移程度相关联的公式。 公式由控制器系统记录。 可以从控制器系统获得补偿值，并在随后的光刻过程中反馈。 此后，在膜上形成光致抗蚀剂层，并执行光刻工艺以对光致抗蚀剂进行图案化。 由于补偿值可以经由控制器系统在光刻处理中反馈，以校正由PVD过程中的目标消耗导致的覆盖标记中的位置偏移，所以可以减少测量重叠标记的误差。

    [PHYSICAL VAPOR DEPOSITION PROCESS AND APPARATUS THEREFOR]
    7.
    发明申请
    [PHYSICAL VAPOR DEPOSITION PROCESS AND APPARATUS THEREFOR] 审中-公开
    [物理蒸气沉积工艺及其设备]

    公开(公告)号：US20050205411A1

    公开(公告)日：2005-09-22

    申请号：US10710698

    申请日：2004-07-29

    申请人： Tai-Yuan Chen ,  Len Mei

    发明人： Tai-Yuan Chen ,  Len Mei

    IPC分类号： C23C14/04 ,  C23C14/35 ,  H01J37/34

    CPC分类号： H01J37/3405 ,  C23C14/046 ,  C23C14/351

    摘要： A physical vapor deposition apparatus is provided. The physical vapor deposition apparatus comprises: a reaction chamber; and an electromagnet magnetron device disposed above and outside said reaction chamber, wherein when performing a physical vapor deposition process, the magnetic poles of said electromagnet magnetron device are reversed in-situ to reduce the possibility of asymmetric deposition of the thin film on the sidewalls of the opening.

    摘要翻译： 提供了一种物理气相沉积装置。 物理气相沉积装置包括：反应室; 以及设置在所述反应室上方和外部的电磁磁控管装置，其中当进行物理气相沉积工艺时，所述电磁磁控管装置的磁极在原地反向以减少薄膜不对称沉积在侧壁上的可能性 开幕。

    Apparatus and process for physical vapor deposition
    8.
    发明申请
    Apparatus and process for physical vapor deposition 审中-公开
    用于物理气相沉积的装置和方法

    公开(公告)号：US20050126904A1

    公开(公告)日：2005-06-16

    申请号：US10930239

    申请日：2004-08-30

    申请人： Tai-Yuan Chen

    发明人： Tai-Yuan Chen

    IPC分类号： C23C14/04 ,  H01J37/34 ,  C23C14/32

    CPC分类号： H01J37/3455 ,  C23C14/046 ,  H01J37/3408

    摘要： An apparatus for physical vapor deposition (PVD) is described. The apparatus includes a chamber, a target back plate, a wafer base, a target and a mobile magnetron device. The target back plate is located over a top surface of the chamber, and the wafer base is located over a bottom surface of the chamber. The target is located over a surface of the target back plate facing the wafer base. Further, the mobile magnetron device is located outside the chamber and above the target. The PVD apparatus can be used that the distance between a magnetic pole of the mobile magnetron device and a bombardment surface of the target is kept constant by adjusting the position of the mobile magnetron device. Therefore, the intensity of magnetic field induced throughout the bombardment surface of the target can also be maintained at a constant value.

    摘要翻译： 描述了用于物理气相沉积（PVD）的装置。 该装置包括室，目标背板，晶片基座，靶和移动磁控管装置。 目标背板位于腔室的顶表面上方，并且晶片基座位于腔室的底表面之上。 目标位于面向晶片底座的目标背板的表面上方。 此外，移动磁控管装置位于室外并且在靶上方。 可以使用PVD装置，通过调节移动磁控管装置的位置，使可移动磁控管装置的磁极和目标的轰击面之间的距离保持恒定。 因此，在目标的整个轰击表面引起的磁场的强度也可以保持在恒定值。

    Multi-level memory cell
    9.
    发明授权
    Multi-level memory cell 有权
    多级存储单元

    公开(公告)号：US06480414B1

    公开(公告)日：2002-11-12

    申请号：US09586835

    申请日：2000-06-05

    申请人： Hong Chin Lin ,  Shyh-Chyi Wong ,  Tai-Yuan Chen

    发明人： Hong Chin Lin ,  Shyh-Chyi Wong ,  Tai-Yuan Chen

    IPC分类号： G11C1604

    CPC分类号： G11C16/0475 ,  G11C11/5621 ,  G11C16/0458 ,  G11C2211/5612 ,  G11C2211/5613

    摘要： A multi-level memory cell has a substrate, a first floating gate, a second floating gate and a control gate. A first doped region, a second doped region and a channel region located between the first doped region and the second doped region are provided in the substrate. The first floating gate is located over the channel region near the first doped region. The second floating gate is located over the channel region near the second doped region and isolated from the first floating gate. A control gate is located over the first and the second floating gates. When writing operations are proceeding, the bias voltages of the control gates are the same, and a constant bias voltage is provided on the first doped region or the second doped region depending on which binary states 11, 10, 01 or 00 are to write. Furthermore, the same bias voltage is used on the control gate during writing operation. Thus, the memory per unit chip area is enhanced and the peripheral circuits are simplified.

    摘要翻译： 多级存储单元具有衬底，第一浮动栅极，第二浮动栅极和控制栅极。 位于第一掺杂区和第二掺杂区之间的第一掺杂区，第二掺杂区和沟道区设置在衬底中。 第一浮栅位于靠近第一掺杂区的沟道区之上。 第二浮栅位于靠近第二掺杂区的沟道区上方并与第一浮栅隔离。 控制栅极位于第一和第二浮动栅极之上。 当写入操作进行时，控制栅极的偏置电压相同，并且根据要写入的二进制状态11,10,21或00，在第一掺杂区域或第二掺杂区域上提供恒定的偏置电压。 此外，在写入操作期间，在控制栅极上使用相同的偏置电压。 因此，每单位芯片面积的存储器被增强并且外围电路被简化。