公开(公告)号：US20070057619A1

公开(公告)日：2007-03-15

申请号：US11531438

申请日：2006-09-13

申请人： Lin-En Chou ,  Bing-Nan Lin ,  Chuan-Hsu Fu

发明人： Lin-En Chou ,  Bing-Nan Lin ,  Chuan-Hsu Fu

IPC分类号： H01J63/00

CPC分类号： H01J61/305 ,  H01J61/35 ,  H01J63/04

摘要： A reflection-type field emission luminescent device is provided. The field emission luminescent device includes a cathode plate having an electron-emitting source formed thereon for emitting an electron beam, an anode plate including a first side having thereon an anode electrode layer and a fluorescence layer and a second side having thereon a reflection layer, and a vacuum formation structure formed between the cathode plate and the anode plate, in which the electron-emitting source, the anode electrode layer and the fluorescence layer are arranged. With the structure of the reflection-type field emission luminescent device, the electron beam generated from the cathode electrode plate is drawn by the anode plate and rams into the fluorescence layer for generating an emitted light in response to a collision of the electron beam to the fluorescence layer, and brightness of the emitted light is further enhanced through the reflection of the reflection layer

摘要翻译： 提供了一种反射型场发射发光装置。 场发射发光装置包括：阴极板，其上形成有用于发射电子束的电子发射源;阳极板，其具有其上具有阳极电极层和荧光层的第一侧，以及具有反射层的第二侧， 以及形成在阴极板和阳极板之间的真空形成结构，其中布置有电子发射源，阳极电极层和荧光层。 利用反射型场发射发光装置的结构，由阴极电极板产生的电子束被阳极板拉伸并进入荧光层，以响应于电子束与电子束的碰撞产生发射的光 荧光层和发射光的亮度通过反射层的反射进一步增强

公开(公告)号：US20070069620A1

公开(公告)日：2007-03-29

申请号：US11427758

申请日：2006-06-29

申请人： Lin-En Chou ,  Cheng-Chung Lee ,  Bing-Nan Lin ,  Wei-Yi Lin

发明人： Lin-En Chou ,  Cheng-Chung Lee ,  Bing-Nan Lin ,  Wei-Yi Lin

IPC分类号： H01J1/02

CPC分类号： H01J31/127 ,  H01J29/02

摘要： A novel electrode pattern design for the electrode plate of field emission device is provided. The electrode plate includes an active region having thereon an electrode layer and a non-active region having thereon a dummy structure or dummy electrode. The material of the dummy electrode is selected from one of the electrode layer materials or the material of the dummy electrode has a coefficient of thermal expansion approximately approaching what the electrode layer material has, so that the stress concentration effect occurring in the non-active region can be eliminated.

摘要翻译： 提供了一种用于场致发射器件的电极板的新型电极图案设计。 电极板包括其上具有电极层和其上具有虚拟结构或虚拟电极的非有源区的有源区。 虚拟电极的材料选自电极层材料之一，或者虚拟电极的材料具有大致接近电极层材料具有的热膨胀系数，使得在非有源区域中发生的应力集中效应 可以消除。

公开(公告)号：US20070069621A1

公开(公告)日：2007-03-29

申请号：US11530265

申请日：2006-09-08

申请人： Lin-En Chou ,  Wei-Yi Lin ,  Bing-Nan Lin

发明人： Lin-En Chou ,  Wei-Yi Lin ,  Bing-Nan Lin

IPC分类号： H01J1/02

CPC分类号： H01J9/14 ,  H01J1/30 ,  H01J1/54 ,  H01J9/02 ,  H01J9/022 ,  H01J9/20 ,  H01J29/02 ,  H01J29/085

摘要： A method for fabricating an anode plate of field emission luminescent device is provided. The method includes the steps of forming a metal layer on a substrate by using the physical or chemical deposition, printing a pattered protection layer on the metal layer, and sintering the pattered protection layer and oxidizing a potion of the metal layer, which is not covered by the pattered protection layer, so as to form a pattered electrode on the metal layer.

摘要翻译： 提供了一种用于制造场发射发光装置的阳极板的方法。 该方法包括以下步骤：通过物理或化学沉积在基板上形成金属层，在金属层上印刷图案保护层，以及烧结图案保护层并氧化未被覆盖的金属层的一部分 通过图案化的保护层，以在金属层上形成图案电极。

公开(公告)号：US07632166B2

公开(公告)日：2009-12-15

申请号：US11362812

申请日：2006-02-28

申请人： Lin-En Chou ,  Wei-Yi Lin ,  Cheng-Chung Lee ,  Ying-Hsien Chen

发明人： Lin-En Chou ,  Wei-Yi Lin ,  Cheng-Chung Lee ,  Ying-Hsien Chen

IPC分类号： H01J9/38 ,  H01J9/24

CPC分类号： H01J9/385 ,  H01J7/18 ,  H01J31/123

摘要： A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

摘要翻译： 一种真空度的提高方法适用于制造真空显示器的工序。 用至少一种类型的光源照射真空显示器中的残留气体或光波加热材料，使真空显示器中的残留气体获得动能。 然后，通过真空泵或至少一个吸气剂有效地吸收残留气体，从而提高真空显示器的真空度。

公开(公告)号：US07226871B2

公开(公告)日：2007-06-05

申请号：US11252560

申请日：2005-10-19

申请人： Lin-En Chou ,  Hung-Che Ting

发明人： Lin-En Chou ,  Hung-Che Ting

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/3143 ,  H01L21/3145 ,  H01L27/1214

摘要： A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

摘要翻译： 一种适用于制造半导体器件的氮氧化硅层的形成方法， 提供多晶硅薄膜晶体管。 在通过辉光放电系统在衬底上形成氮化硅/氧化硅层之后，在衬底上进行等离子体表面处理，以将氮化硅/氧化硅层转化为氮氧化硅层。 半导体器件可以在单工设备中完全制造。 因此，生产时间和生产成本有利地降低。

公开(公告)号：US20090121325A1

公开(公告)日：2009-05-14

申请号：US12353345

申请日：2009-01-14

申请人： Lin-En Chou ,  Chia-Hao Tsai ,  Wen-Tung Wang

发明人： Lin-En Chou ,  Chia-Hao Tsai ,  Wen-Tung Wang

IPC分类号： H01L27/12 ,  G03F7/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66742 ,  H01L51/0022

摘要： A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of ladder opaque protrusions in accordance with a predetermined pattern having different depth; controlling the transparent mold plate downwardly to press into the positive photosensitive coating and non-contacting to the glass substrate; exploring a part of the positive photosensitive coating via an explosion by a UV light; remaining the other part of the positive photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern; separating the transparent mold plate from the glass substrate, and removing the other parts of the photosensitive coating unshielded via a chemical solvent. Thereby, after the positive photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.

摘要翻译： 一种制造薄膜晶体管的方法，包括以下步骤：准备玻璃基板; 在玻璃基板上具有正光敏涂层; 提供透明模板，具有根据具有不同深度的预定图案的多个梯子不透明突起; 向下控制透明模具板压入正性感光涂层中并且不与玻璃基板接触; 通过紫外线的爆炸探测正性光敏涂层的一部分; 剩余的正光敏涂层的另一部分被突起屏蔽并对应于预定图案成形; 将透明模具板与玻璃基板分离，并且通过化学溶剂去除未屏蔽的感光涂层的其它部分。 由此，在正感光性涂层被按压，固化和清洁之后，形成薄膜晶体管。

公开(公告)号：US08268538B2

公开(公告)日：2012-09-18

申请号：US12353345

申请日：2009-01-14

申请人： Lin-En Chou ,  Chia-Hao Tsai ,  Wen-Tung Wang

发明人： Lin-En Chou ,  Chia-Hao Tsai ,  Wen-Tung Wang

IPC分类号： G03F7/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66742 ,  H01L51/0022

摘要： A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths.

摘要翻译： 制造薄膜晶体管的方法包括提供玻璃基板; 在玻璃基板上设置正光敏涂层; 提供具有根据预定图案布置并且具有至少两个不同深度的多个梯子不透明突起的透明模制板; 将透明模板压入正光敏涂层中而不与玻璃基板接触; 用紫外光曝光在梯子不透明突起下未被屏蔽的正光敏涂层的一部分; 在曝光步骤之后将透明模板与玻璃基板分离; 并且使用化学溶剂除去在梯子不透明突起下未被屏蔽而未固化的正感光性涂层的一部分，由此薄膜晶体管形成为具有多于两个不同深度的图案。

公开(公告)号：US20070060007A1

公开(公告)日：2007-03-15

申请号：US11362812

申请日：2006-02-28

申请人： Lin-En Chou ,  Wei-Yi Lin ,  Cheng-Chung Lee ,  Ying-Hsien Chen

发明人： Lin-En Chou ,  Wei-Yi Lin ,  Cheng-Chung Lee ,  Ying-Hsien Chen

IPC分类号： H01J9/26 ,  H01J9/38

CPC分类号： H01J9/385 ,  H01J7/18 ,  H01J31/123

摘要： A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

摘要翻译： 一种真空度的提高方法适用于制造真空显示器的工序。 用至少一种类型的光源照射真空显示器中的残留气体或光波加热材料，使真空显示器中的残留气体获得动能。 然后，通过真空泵或至少一个吸气剂有效地吸收残留气体，从而提高真空显示器的真空度。

公开(公告)号：US20060148140A1

公开(公告)日：2006-07-06

申请号：US11252560

申请日：2005-10-19

申请人： Lin-En Chou ,  Hung-Che Ting

发明人： Lin-En Chou ,  Hung-Che Ting

IPC分类号： H01L21/84

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/3143 ,  H01L21/3145 ,  H01L27/1214

摘要： A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

摘要翻译： 一种适用于制造半导体器件的氮氧化硅层的形成方法， 提供多晶硅薄膜晶体管。 在通过辉光放电系统在衬底上形成氮化硅/氧化硅层之后，在衬底上进行等离子体表面处理，以将氮化硅/氧化硅层转化为氮氧化硅层。 半导体器件可以在单工设备中完全制造。 因此，生产时间和生产成本有利地降低。

公开(公告)号：US20060046203A1

公开(公告)日：2006-03-02

申请号：US10995479

申请日：2004-11-24

申请人： Lin-En Chou ,  Chia-Hao Tsai ,  Shun-Feng Liu

发明人： Lin-En Chou ,  Chia-Hao Tsai ,  Shun-Feng Liu

IPC分类号： G03F7/00

CPC分类号： H01L27/1288 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L27/1214 ,  H01L29/66742

摘要： A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a negative photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of opaque protrusions in accordance with a predetermined pattern; controlling the transparent mold plate downwardly to press into the negative photosensitive coating of the glass substrate; curing a part of the negative photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern, via an explosion by a UV light; separating the transparent mold plate from the glass substrate, and removing a resident, uncured part of the negative photosensitive coating via a chemical solvent. Thereby, after the negative photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.

摘要翻译： 一种制造薄膜晶体管的方法，包括以下步骤：准备玻璃基板; 在玻璃基板上具有负光敏涂层; 提供透明模板，具有根据预定图案的多个不透明突起; 向下控制透明模板压入玻璃基板的负光敏涂层; 通过紫外线的爆炸固化一部分由突起屏蔽并且对应于预定图案成形的负感光涂层; 将透明模板与玻璃基板分离，并通过化学溶剂去除负光敏涂层的驻留未固化部分。 由此，在负极感光涂层被压制，固化和清洁之后，形成薄膜晶体管。