TECHNIQUES FOR IMPROVED FEATURE DETECTION
    1.
    发明申请
    TECHNIQUES FOR IMPROVED FEATURE DETECTION 有权
    改进特征检测技术

    公开(公告)号:US20140086490A1

    公开(公告)日:2014-03-27

    申请号:US13625962

    申请日:2012-09-25

    CPC classification number: G06K9/46

    Abstract: Techniques for improved feature detection are described. In one embodiment, for example, a device may include a processor circuit and a feature detection module, and the feature detection module may be operative on the processor circuit to perform a first feature detection iteration for a graphics information element using an integral pixel value array, determine a scaling factor, recalculate the integral pixel value array based on the scaling factor, and perform a second feature detection iteration for the graphics information element using the recalculated integral pixel value array. Other embodiments are described and claimed.

    Abstract translation: 描述了用于改进特征检测的技术。 在一个实施例中,例如,设备可以包括处理器电路和特征检测模块,并且特征检测模块可以在处理器电路上操作,以使用积分像素值阵列来执行图形信息元素的第一特征检测迭代 确定缩放因子,基于缩放因子重新计算积分像素值阵列,并且使用重新计算的积分像素值阵列对图形信息元素执行第二特征检测迭代。 描述和要求保护其他实施例。

    MULTIPLE REGION VIDEO CONFERENCE ENCODING
    2.
    发明申请
    MULTIPLE REGION VIDEO CONFERENCE ENCODING 审中-公开
    多区域视频会议编码

    公开(公告)号:US20140341280A1

    公开(公告)日:2014-11-20

    申请号:US13997867

    申请日:2012-12-18

    Applicant: Liu Yang Bin Wang

    Inventor: Liu Yang Bin Wang

    CPC classification number: H04N7/15 H04N7/147

    Abstract: Systems and method may provide for a computing device that encodes multiple regions of a video frame at different quality levels. In particular, a first region of one or more frames containing a speaker's face may be located and encoded at a first quality level. A second region containing a background, on the other hand, may be located and encoded at a second quality level. Optionally a third region containing additional faces may be located and encoded at a third quality level and a fourth region may be located and encoded at a fourth quality level.

    Abstract translation: 系统和方法可以提供对不同质量级别的视频帧的多个区域进行编码的计算设备。 特别地,可以在第一质量水平上定位并编码包含扬声器面部的一个或多个帧的第一区域。 另一方面,包含背景的第二区域可以位于第二质量水平并被编码。 可选地,可以在第三质量水平上定位并编码包含附加面的第三区域,并且可以在第四质量水平上定位和编码第四区域。

    Video codec and motion estimation method

    公开(公告)号:US09648338B2

    公开(公告)日:2017-05-09

    申请号:US13406185

    申请日:2012-02-27

    CPC classification number: H04N19/433 H04N19/51

    Abstract: The invention provides a video codec. In one embodiment, the video codec is coupled to an outer memory storing a reference frame, and comprises an interface circuit, an in-chip memory, a motion estimation circuit, and a controller. The interface circuit obtains in-chip data from the reference frame stored in the outer memory. The in-chip memory stores the in-chip data. The motion estimation circuit retrieves search window data from the in-chip data with a search window, and performs a motion estimation process on a current macroblock according to the search-window data. The controller shifts the location of the search window when the current macroblock is shifted, marks a macroblock shifted out from the search window as an empty macroblock, and controls the interface circuit to obtain an updated macroblock for replacing the empty macroblock in the in-chip memory from the reference frame stored in the outer memory.

    Method of Making a Multicomponent Film
    8.
    发明申请
    Method of Making a Multicomponent Film 有权
    制作多组分薄膜的方法

    公开(公告)号:US20120034767A1

    公开(公告)日:2012-02-09

    申请号:US13023145

    申请日:2011-02-08

    Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

    Abstract translation: 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中,本文所述的方法和组合物用于沉积锗碲(GeTe),锑碲(SbTe),锑锗(SbGe),锗锑碲(GST),铟锑碲(IST),银铟锑碲 (AIST),碲化镉(CdTe),硒化镉(CdSe),碲化锌(ZnTe),硒化锌(ZnSe),铜铟镓硒(CIGS)膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。

    REINFORCED TISSUE SHIELDS
    9.
    发明申请
    REINFORCED TISSUE SHIELDS 审中-公开
    加强组织鞋

    公开(公告)号:US20110256185A1

    公开(公告)日:2011-10-20

    申请号:US13087920

    申请日:2011-04-15

    Abstract: Self-reinforced tissue shields are useful as ophthalmic shields, wound dressings, wound barriers, nerve repair, therapeutic drug delivery devices and the like. The self-reinforced tissue protective shields comprise gelatin, chitosan and reinforce and are made by a method comprising forming inter-molecular locking within a solution through electrostatic forces, eliminating the use of extra cross-linking methods, the solution mainly comprising natural existing polymers that are biodegradable and biocompatible.

    Abstract translation: 自增强组织护罩可用作眼科护理,伤口敷料,伤口障碍,神经修复,治疗药物递送装置等。 自增强组织保护罩包括明胶,壳聚糖和增强剂,并且通过包括通过静电力在溶液中形成分子间锁定的方法制成,消除了使用额外的交联方法,该溶液主要包含天然存在的聚合物, 是可生物降解和生物兼容的。

    Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same
    10.
    发明申请
    Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same 有权
    二元和三元金属硫族化物材料及其制造和使用方法

    公开(公告)号:US20090280052A1

    公开(公告)日:2009-11-12

    申请号:US12425821

    申请日:2009-04-17

    CPC classification number: C23C16/305 C23C16/45553

    Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

    Abstract translation: 本发明公开了使用化学气相沉积(CVD)工艺,原子层沉积(ALD)工艺或湿法工艺的金属硫族化合物的合成。 有机甲硅烷基碲或有机甲硅烷基硒与一系列具有亲核取代基的金属化合物的配体交换反应产生金属硫族化物。 该化学物质用于沉积锗 - 锑碲(GeSbTe)和锗 - 锑 - 硒(GeSbSe)膜或其他碲和硒基金属化合物用于相变记忆和光伏器件。

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