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163 条记录 (耗时 0.034 秒)

    Method and apparatus for electrochemical-mechanical planarization
    1.
    发明授权
    Method and apparatus for electrochemical-mechanical planarization 失效
    电化学机械平面化方法和装置

    公开(公告)号：US06739951B2

    公开(公告)日：2004-05-25

    申请号：US10097496

    申请日：2002-03-14

    申请人： Lizhong Sun ,  Stan D. Tsai ,  Fred C. Redeker

    发明人： Lizhong Sun ,  Stan D. Tsai ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/042

    摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    摘要翻译： 一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解 导电的，研磨的或非研磨的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。 该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。 还公开了用于执行EMP的装置。

    Method and apparatus for electrochemical-mechanical planarization
    2.
    发明授权
    Method and apparatus for electrochemical-mechanical planarization 失效
    电化学机械平面化方法和装置

    公开(公告)号：US06379223B1

    公开(公告)日：2002-04-30

    申请号：US09450937

    申请日：1999-11-29

    申请人： Lizhong Sun ,  Stan D. Tsai ,  Fred C. Redeker

    发明人： Lizhong Sun ,  Stan D. Tsai ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/042

    摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    摘要翻译： 一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解 导电的，研磨的或非磨蚀的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。 该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。 还公开了用于执行EMP的装置。

    Method and apparatus for enhanced CMP using metals having reductive properties
    3.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06537144B1

    公开(公告)日：2003-03-25

    申请号：US09505899

    申请日：2000-02-17

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24D1100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Temperature control in a chemical mechanical polishing system
    4.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号：US07153188B1

    公开(公告)日：2006-12-26

    申请号：US11245558

    申请日：2005-10-07

    申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015

    摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。

    Method and apparatus for enhanced CMP using metals having reductive properties
    9.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06561873B2

    公开(公告)日：2003-05-13

    申请号：US10093897

    申请日：2002-03-08

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Cu CMP polishing pad cleaning
    10.
    发明授权
    Cu CMP polishing pad cleaning 失效
    Cu CMP抛光垫清洗

    公开(公告)号：US07220322B1

    公开(公告)日：2007-05-22

    申请号：US09645690

    申请日：2000-08-24

    申请人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    发明人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

    IPC分类号： B08B7/04 ,  H01L21/302

    CPC分类号： B24B53/017

    摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.

    摘要翻译： 在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。 ％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。 实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。 在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。