公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06638143B2

公开(公告)日：2003-10-28

申请号：US09737414

申请日：2000-12-14

申请人： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

摘要： Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

公开(公告)号：US06561873B2

公开(公告)日：2003-05-13

申请号：US10093897

申请日：2002-03-08

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06572453B1

公开(公告)日：2003-06-03

申请号：US09575218

申请日：2000-05-18

申请人： Kapila Wijekoon ,  Stan D. Tsai ,  Yuchun Wang ,  Doyle E. Bennett ,  Fred C. Redeker ,  Madhavi Chandrachood ,  Brian J. Brown

发明人： Kapila Wijekoon ,  Stan D. Tsai ,  Yuchun Wang ,  Doyle E. Bennett ,  Fred C. Redeker ,  Madhavi Chandrachood ,  Brian J. Brown

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B08B1/04 ,  B24B57/02 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/3212

摘要： A polishing method is provided which simultaneously supplies both a polishing fluid and a conditioning fluid to a polishing pad, while a substrate is in moving contact with the polishing pad.

摘要翻译： 提供了一种抛光方法，其同时将抛光液和调理流体同时供应到抛光垫，同时衬底与抛光垫移动接触。

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

摘要翻译： 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。

公开(公告)号：US06872329B2

公开(公告)日：2005-03-29

申请号：US09842476

申请日：2001-04-25

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

IPC分类号： B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

摘要： A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

摘要翻译： 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。

公开(公告)号：US06783432B2

公开(公告)日：2004-08-31

申请号：US09874177

申请日：2001-06-04

申请人： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02

摘要： A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.

摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括压敏溶液和用于与金属或氧化金属络合的一种或多种化学试剂。 一种从基材表面除去含铜层的方法，包括将组合物施用于抛光介质，所述组合物包含压敏溶液，以及一种或多种与金属或氧化金属络合的化学试剂，以及研磨该基材 表面与抛光介质。

公开(公告)号：US06569349B1

公开(公告)日：2003-05-27

申请号：US09694866

申请日：2000-10-23

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： C09K1300

CPC分类号： C09G1/04 ,  H01L21/3212

摘要： A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more surfactants, one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including a polar solvent.

摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，极性溶剂和去离子水。 组合物还可以包含一种或多种表面活性剂，一种或多种调节pH和/或研磨颗粒的试剂。 该方法包括使用包含极性溶剂的组合物平面化底物。

公开(公告)号：US06435944B1

公开(公告)日：2002-08-20

申请号：US09428304

申请日：1999-10-27

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e.g., peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e.g., urea peroxy acid.

摘要翻译： CMP浆料与能够氧化经历平坦化的金属的单一成分氧化剂一起配制，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 实施方案包括具有固定磨料垫的CMP Cu或含磨料的浆料，使用过氧酸，例如过氧苯甲酸或聚乙二醇过氧酸。 在另一个实施方案中，使用单一组分，其在浆料中解离成氧化剂和络合剂，例如胺 - 过氧酸，例如尿素过氧酸。

公开(公告)号：US20100035518A1

公开(公告)日：2010-02-11

申请号：US12187675

申请日：2008-08-07

申请人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

发明人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

IPC分类号： B24B49/12 ,  B24B1/00 ,  B24B7/00

CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B53/017

摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

摘要翻译： 化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。 化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。