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24 条记录 (耗时 0.026 秒)

    Method and apparatus for enhanced CMP using metals having reductive properties
    1.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06537144B1

    公开(公告)日：2003-03-25

    申请号：US09505899

    申请日：2000-02-17

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24D1100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Method and apparatus for enhanced CMP using metals having reductive properties
    3.
    发明授权
    Method and apparatus for enhanced CMP using metals having reductive properties 失效

    公开(公告)号：US06561873B2

    公开(公告)日：2003-05-13

    申请号：US10093897

    申请日：2002-03-08

    申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

    摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Temperature control in a chemical mechanical polishing system
    4.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号：US07153188B1

    公开(公告)日：2006-12-26

    申请号：US11245558

    申请日：2005-10-07

    申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015

    摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。

    Method and apparatus for hard pad polishing
    8.
    发明授权
    Method and apparatus for hard pad polishing 失效

    公开(公告)号：US06620027B2

    公开(公告)日：2003-09-16

    申请号：US10044379

    申请日：2002-01-09

    申请人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

    发明人： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

    IPC分类号： B24B5100

    CPC分类号： B24B37/12 ,  B24B37/042 ,  B24B37/24

    摘要： Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

    Endpoint monitoring with polishing rate change
    9.
    发明授权
    Endpoint monitoring with polishing rate change 有权
    端点监测与抛光速率变化

    公开(公告)号：US06309276B1

    公开(公告)日：2001-10-30

    申请号：US09495616

    申请日：2000-02-01

    申请人： Stan Tsai ,  Fred C. Redeker ,  Kapila Wijekoon

    发明人： Stan Tsai ,  Fred C. Redeker ,  Kapila Wijekoon

    IPC分类号： B24B100

    CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12

    摘要： A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.

    摘要翻译： 具有设置在第二层上的第一层的衬底被化学机械抛光。 抛光端点检测系统生成监视端点标准的信号。 当第一层的主体已被去除但在第二层被暴露之前，衬底的抛光速率降低。 例如，当抛光时间接近预期的抛光结束时间但在检测到端点标准之前，抛光速率降低。 一旦在底层暴露后检测到终点标准，抛光停止。