公开(公告)号：US06960831B2

公开(公告)日：2005-11-01

申请号：US10605369

申请日：2003-09-25

申请人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

发明人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

IPC分类号： H01L23/485 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/45 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.

摘要翻译： 一种半导体器件，以及一种制造该器件的方法，在铜布线层上方具有铜布线层和铝接合焊盘。 除了通常存在以保护铜布线水平的阻挡层之外，在铝接合焊盘和阻挡层之间存在复合层，以使铝接合焊盘更坚固，以便承受粘结和探测的力。 复合层是难熔金属和难熔金属氮化物的夹层物。