Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
    6.
    发明授权
    Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less 有权
    用于制造集成电路器件,光学器件,微机械和机械精密器件的方法,其具有线间距尺寸为50nm以下的图案化材料层

    公开(公告)号:US09184057B2

    公开(公告)日:2015-11-10

    申请号:US14005746

    申请日:2012-02-29

    摘要: A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

    摘要翻译: 一种用于制造集成电路器件,光学器件,微机械和机械精密器件的方法,所述方法包括以下步骤:(1)提供具有线间距尺寸为50nm或更小的纵向比为> 2的图案化材料层的衬底 ; (2)通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面, 或潜在的阳离子基团,至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和(3)从与基板的接触中除去无水的无水溶液S.

    METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS
    8.
    发明申请
    METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS 有权
    用于制造集成电路装置的方法,光学装置,微型计算机和机械精密装置,具有50纳米的空间尺寸的图案材料层和较小的材料层

    公开(公告)号:US20140011366A1

    公开(公告)日:2014-01-09

    申请号:US14005746

    申请日:2012-02-29

    IPC分类号: H01L21/308

    摘要: A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

    摘要翻译: 一种用于制造集成电路器件,光学器件,微机械和机械精密器件的方法,所述方法包括以下步骤:(1)提供具有线间距尺寸为50nm或更小的纵向比为> 2的图案化材料层的衬底 ; (2)通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面, 或潜在的阳离子基团,至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和(3)从与基板的接触中除去无水的无水溶液S.