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    Organic electronic device and dopant for doping an organic semiconducting matrix material
    8.
    发明授权
    Organic electronic device and dopant for doping an organic semiconducting matrix material 有权
    用于掺杂有机半导体基质材料的有机电子器件和掺杂剂

    公开(公告)号：US08624229B2

    公开(公告)日：2014-01-07

    申请号：US12884683

    申请日：2010-09-17

    申请人： Guenter Schmid ,  Jan Hauke Wemken ,  Marina A. Petrukhina

    发明人： Guenter Schmid ,  Jan Hauke Wemken ,  Marina A. Petrukhina

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0091 ,  C07F1/005 ,  H01L51/5052 ,  Y02E10/549

    摘要： An organic electronic device includes a substrate, a first electrode arranged on the substrate, at least a first functional organic layer arranged on the first electrode and a second electrode arranged on the first functional organic layer. The first functional organic layer includes a matrix material and a p-dopant with regard to the matrix material, wherein the p-dopant includes a copper complex containing at least one ligand.

    摘要翻译： 有机电子器件包括衬底，布置在衬底上的第一电极，布置在第一电极上的至少第一功能有机层和布置在第一功能有机层上的第二电极。 关于基质材料，第一功能性有机层包括基体材料和p-掺杂剂，其中p掺杂剂包括含有至少一个配体的铜络合物。

    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit
    9.
    发明申请
    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit 有权
    包含有机半导体的集成电路以及集成电路的制造方法

    公开(公告)号：US20080315192A1

    公开(公告)日：2008-12-25

    申请号：US12188966

    申请日：2008-08-08

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    IPC分类号： H01L51/05

    CPC分类号： H01B3/442 ,  H01L51/052

    摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

    摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。

    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors
    10.
    发明申请
    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors 审中-公开
    超薄电介质及其在有机场效应晶体管中的应用

    公开(公告)号：US20080290337A1

    公开(公告)日：2008-11-27

    申请号：US11568791

    申请日：2005-11-17

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

    摘要翻译： 公开了一种具有基板，源电极，漏电极和栅电极以及有机半导体材料的有机场效应晶体管。 在栅电极和有机半导体材料之间布置的是从具有锚定基团，连接基团，头基团和脂族取向基团的有机化合物的自组装单层获得的电介质层（栅极电介质），所述锚 基团，连接基团，头基团和脂族取代基团按所述顺序彼此组合。