Photoactive compounds
    7.
    发明授权
    Photoactive compounds 失效
    光活性化合物

    公开(公告)号:US07547501B2

    公开(公告)日:2009-06-16

    申请号:US11538841

    申请日:2006-10-05

    摘要: The present application relates to photoactive materials having the formula wherein C1+ is a cation; each of R30, R31, R32, R33, R34, R35, R36, R37, R38, R39, R40, and R41 are selected from hydrogen, alkyl, alkyl chain optionally containing one or more O atoms, halide, aryl, aralkyl, alkoxyalkyl, cycloalkyl, hydroxyl, and alkoxy, the alkyl, alkyl chain optionally containing one or more O atoms, aryl, aralkyl, alkoxyalkyl, cycloalkyl, and alkoxy groups being unsubstituted or substituted.

    摘要翻译: 本申请涉及具有下式的光活性材料:其中C1 +是阳离子; R30,R31,R32,R33,R34,R35,R36,R37,R38,R39,R40和R41各自选自氢,烷基,任选含有一个或多个O原子的烷基链,卤素,芳基,芳烷基,烷氧基烷基 ,环烷基,羟基和烷氧基,烷基,任选地含有一个或多个O原子的烷基,芳基,芳烷基,烷氧基烷基,环烷基和烷氧基是未取代或取代的。

    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    9.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物,其包含光活性化合物的混合物

    公开(公告)号:US06991888B2

    公开(公告)日:2006-01-31

    申请号:US10439472

    申请日:2003-05-16

    摘要: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译: 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物,能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a)含有酸不稳定基团的聚合物,和b)光活性化合物的新混合物,其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ,其中R 1和R 2 R 5,R 6,R 7,或N R 8,R 9和R 9在本文中定义; m = 1-5; X - 是阴离子,Ar选自萘基,蒽基和结构3,其中R 30,R 31,R SUB > 32,R 33和R 34在本文中定义。

    Photoresist composition for deep UV and process thereof
    10.
    发明授权
    Photoresist composition for deep UV and process thereof 失效
    用于深紫外线的光致抗蚀剂组合物及其工艺

    公开(公告)号:US06447980B1

    公开(公告)日:2002-09-10

    申请号:US09619336

    申请日:2000-07-19

    IPC分类号: G03C1492

    摘要: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

    摘要翻译: 本发明涉及一种化学放大系统,其对300nm至100nm之间的波长敏感,并且包括a)不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物,b)具有能力的化合物 在辐射时产生酸。 本发明包括由脂环烃烯烃,具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。 本发明还涉及这种光致抗蚀剂的成像方法。