公开(公告)号：US12142319B2

公开(公告)日：2024-11-12

申请号：US17846304

申请日：2022-06-22

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao Tseng ,  Tian-Cih Bo ,  Feng-Min Lee

IPC: G11C15/04

Abstract: A hybrid type content addressable memory for implementing in-memory-search and an operation method thereof are provided. The CAM includes a plurality of CAM strings and at least one sense amplifier circuit. Each of the CAM strings includes a plurality of CAM cells. The CAM cells store a plurality of existing data. The sense amplifier circuit is connected to the CAM strings. A plurality of search data are inputted to the CAM strings. A plurality of cell matching results obtained from the CAM cells in each of the CAM strings are integrated via an AND operation to obtain a string matching result. The string matching results obtained from the CAM strings are integrated via an OR operation.

公开(公告)号：US12159672B2

公开(公告)日：2024-12-03

申请号：US18162728

申请日：2023-02-01

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao Tseng ,  Yu-Hsuan Lin ,  Tian-Cih Bo ,  Feng-Min Lee ,  Yu-Yu Lin

IPC: G11C16/04 ,  G11C15/04

Abstract: A hybrid in-memory search (IMS) content addressable memory (CAM) cell includes: a first IMS CAM cell; and a second IMS CAM cell, coupled to the first IMS CAM cell. The first IMS CAM cell and the second IMS CAM cell are of different types. When the hybrid IMS CAM cell stores a storage data, the first IMS CAM cell stores a first part of the storage data and the second IMS CAM cell stores the storage data or a second part of the storage data.

公开(公告)号：US20240274164A1

公开(公告)日：2024-08-15

申请号：US18166495

申请日：2023-02-09

Applicant: MACRONIX International Co., Ltd.

Inventor： Po-Hao Tseng ,  Feng-Min Lee ,  Tian-Cih Bo

IPC: G11C7/10 ,  G11C8/08

CPC classification number: G11C7/1069 ,  G11C8/08

Abstract: A memory device and an in-memory search method thereof are provided. The in-memory search method includes: providing, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logical status of searched data, and reading a first current; providing, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logical status of the searched data, and reading a second current; and obtaining a search result according to a difference between the second current and the first current.

公开(公告)号：US12183422B2

公开(公告)日：2024-12-31

申请号：US18166495

申请日：2023-02-09

Applicant: MACRONIX International Co., Ltd.

Inventor： Po-Hao Tseng ,  Feng-Min Lee ,  Tian-Cih Bo

IPC: G11C7/10 ,  G11C8/08

Abstract: A memory device and an in-memory search method thereof are provided. The in-memory search method includes: providing, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logical status of searched data, and reading a first current; providing, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logical status of the searched data, and reading a second current; and obtaining a search result according to a difference between the second current and the first current.

公开(公告)号：US20240221830A1

公开(公告)日：2024-07-04

申请号：US18173096

申请日：2023-02-23

Applicant: MACRONIX International Co., Ltd.

Inventor： Po-Hao Tseng ,  Tian-Cih Bo ,  Feng-Min Lee

IPC: G11C15/04 ,  G11C16/04 ,  G11C16/26

CPC classification number: G11C15/04 ,  G11C16/0483 ,  G11C16/26

Abstract: A memory device and an in-memory search method thereof are provided. The memory device includes a first memory cell block, a second memory cell block, at least one search memory cell pair, and a sense amplifier. The search memory cell pair includes a first search memory cell and a second search memory cell. The first search memory cell and the second search memory cell are respectively disposed in the first memory cell block and the second memory cell block. The first search memory cell and the second search memory cell respectively receive a first search voltage and a second search voltage. The first search voltage and the second search voltage are generated according to searched data. The sense amplifier generates a search result according to signals on a first bit line and a second bit line.

公开(公告)号：US11955186B2

公开(公告)日：2024-04-09

申请号：US17812243

申请日：2022-07-13

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao Tseng ,  Tian-Cih Bo

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/30 ,  G11C15/04

CPC classification number: G11C16/3404 ,  G11C16/26 ,  G11C16/30 ,  G11C15/04 ,  G11C15/046

Abstract: A memory device for in-memory search is provided. The memory device includes a plurality of memory cells, and each of the memory cells stores a stored data and receives a search data, including a first transistor and a second transistor. The first transistor has a first threshold voltage and receives a first gate bias. The second transistor is connected to the first transistor, and the second transistor has a second threshold voltage and receives a second gate bias. The stored data is encoded according to the first threshold voltage and the second threshold voltage, and the search data is encoded according to the first gate bias and the second gate bias. There is a mismatch distance between the stored data and the search data. An output current generated by each of the memory cells is related to the mismatch distance.