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    Memory device with high content density
    1.
    发明授权
    Memory device with high content density 有权

    公开(公告)号：US12057179B2

    公开(公告)日：2024-08-06

    申请号：US17686469

    申请日：2022-03-04

    申请人： MACRONIX INTERNATIONAL CO., LTD.

    发明人： Po-Hao Tseng

    IPC分类号： G11C16/34 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

    CPC分类号： G11C16/3404 ,  G11C16/08 ,  G11C16/102 ,  G11C16/26 ,  G11C16/30

    摘要： A memory device, which includes a first driving circuit, a second driving circuit, a sensing circuit and an in-memory search (IMS) array. Memory units of the in-memory search array are arranged as a plurality of horizontal rows and vertical columns. Control terminal of each the memory unit in the same vertical column is coupled to the first driving circuit through a word line. The memory units of the same vertical column are connected in series and coupled to the second driving circuit through a bit line, and coupled to the sensing circuit through a source line. Every 2N adjacent memory units in the same vertical column are arranged as a memory unit to store an encoded data of 2N bits corresponding to an original data of M bits, where N and M are positive integers, and N is greater than or equal to two.

    Content addressable memory device, content addressable memory cell and method for single-bit multi-level data searching and comparing
    7.
    发明授权
    Content addressable memory device, content addressable memory cell and method for single-bit multi-level data searching and comparing 有权

    公开(公告)号：US12094534B2

    公开(公告)日：2024-09-17

    申请号：US18459461

    申请日：2023-09-01

    申请人： MACRONIX INTERNATIONAL CO., LTD.

    发明人： Yu-Hsuan Lin ,  Po-Hao Tseng

    IPC分类号： G11C15/04 ,  G11C7/14

    CPC分类号： G11C15/046 ,  G11C7/14

    摘要： The application provides a content addressable memory (CAM) memory device, a CAM cell and a method for searching and comparing data thereof. The CAM device includes: a plurality of CAM cells; and an electrical characteristic detection circuit coupled to the CAM cells; wherein in data searching, a search data is compared with a storage data stored in the CAM cells, the CAM cells generate a plurality of memory cell currents, the electrical characteristic detection circuit detects the memory cell currents to generate a plurality of sensing results, or the electrical characteristic detection circuit detects a plurality of match line voltages on a plurality of match lines coupled to the CAM cells to generate the plurality of search results; and the storage data is a single-bit multi-level storage data and/or the search data is a single-bit multi-level search data.

    Content addressable memory device, content addressable memory cell and method for data searching with a range or single-bit data
    9.
    发明授权
    Content addressable memory device, content addressable memory cell and method for data searching with a range or single-bit data 有权

    公开(公告)号：US11875850B2

    公开(公告)日：2024-01-16

    申请号：US17730259

    申请日：2022-04-27

    申请人： MACRONIX INTERNATIONAL CO., LTD.

    发明人： Po-Hao Tseng

    IPC分类号： G11C15/04

    CPC分类号： G11C15/046

    摘要： The application provides a content addressable memory (CAM) memory device, a CAM memory cell and a method for searching and comparing data thereof. The CAM memory device includes: a plurality of CAM memory strings; and an electrical characteristic detection circuit. In data searching, a search data is compared with a storage data stored in the CAM memory strings, the CAM memory strings generate a plurality of memory string currents, the electrical characteristic detection circuit detects the memory string currents to generate a plurality of sensing results, or detects a plurality of match line voltages on a plurality of match lines coupled to the CAM memory string to generate the plurality of search results. The storage data and the search data is a range storage data and a single-bit search data, or the storage data and the search data is a single-bit storage data and a range search data.

    Content addressable memory device, content addressable memory cell and method for single-bit multi-level data searching and comparing
    10.
    发明授权
    Content addressable memory device, content addressable memory cell and method for single-bit multi-level data searching and comparing 有权

    公开(公告)号：US11790990B2

    公开(公告)日：2023-10-17

    申请号：US17717192

    申请日：2022-04-11

    申请人： MACRONIX INTERNATIONAL CO., LTD.

    发明人： Yu-Hsuan Lin ,  Po-Hao Tseng

    IPC分类号： G11C15/04 ,  G11C7/14

    CPC分类号： G11C15/046 ,  G11C7/14

    摘要： The application provides a content addressable memory (CAM) memory device, a CAM memory cell and a method for searching and comparing data thereof. The CAM memory device includes: a plurality of CAM memory cells; and an electrical characteristic detection circuit coupled to the CAM memory cells; wherein in data searching, a search data is compared with a storage data stored in the CAM memory cells, the CAM memory cells generate a plurality of memory cell currents, the electrical characteristic detection circuit detects the memory cell currents to generate a plurality of sensing results, or the electrical characteristic detection circuit detects a plurality of match line voltages on a plurality of match lines coupled to the CAM memory cells to generate the plurality of search results; and the storage data is a single-bit multi-level storage data and/or the search data is a single-bit multi-level search data.