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公开(公告)号：US11875854B2
公开(公告)日：2024-01-16
申请号：US17710683
申请日：2022-03-31
发明人： Teng Hao Yeh , Wu-Chin Peng , Chih-Ming Lin , Hang-Ting Lue
摘要： A memory device and a word line driver thereof are provided. The word line driver includes a first word line signal generator, a second word line signal generator, a first voltage generator, and a second voltage generator. The first word line signal generator selects one of a first voltage and a second voltage to generate a first word line signal according a control signal. The second word line signal generator selects one of a third voltage and a fourth voltage to generate a second word line signal according the control signal. The first voltage generator provides the second voltage, and the second voltage generator provides the fourth voltage, where the first voltage generator is independent to the second voltage generator.
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公开(公告)号：US20230317167A1
公开(公告)日：2023-10-05
申请号：US17710683
申请日：2022-03-31
发明人： Teng Hao Yeh , Wu-Chin Peng , Chih-Ming Lin , Hang-Ting Lue
摘要： A memory device and a word line driver thereof are provided. The word line driver includes a first word line signal generator, a second word line signal generator, a first voltage generator, and a second voltage generator. The first word line signal generator selects one of a first voltage and a second voltage to generate a first word line signal according a control signal. The second word line signal generator selects one of a third voltage and a fourth voltage to generate a second word line signal according the control signal. The first voltage generator provides the second voltage, and the second voltage generator provides the fourth voltage, where the first voltage generator is independent to the second voltage generator.
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