公开(公告)号：US10607848B2

公开(公告)日：2020-03-31

申请号：US15955549

申请日：2018-04-17

Applicant: MACRONIX International Co., Ltd.

Inventor： Yuan-Chieh Chiu ,  Shih-Ping Hong ,  Kuang-Chao Chen ,  Yen-Ju Chen

IPC: H01L21/311 ,  H01L23/485 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3105 ,  H01L23/532 ,  H01L23/31 ,  H01L21/28 ,  H01L33/44 ,  H01L31/18

Abstract: Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.

公开(公告)号：US09953841B2

公开(公告)日：2018-04-24

申请号：US14707648

申请日：2015-05-08

Applicant: MACRONIX International Co., Ltd.

Inventor： Yuan-Chieh Chiu ,  Shih-Ping Hong ,  Kuang-Chao Chen ,  Yen-Ju Chen

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/28 ,  H01L31/18 ,  H01L33/44 ,  H01L21/311 ,  H01L23/485 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3105

CPC classification number: H01L21/31111 ,  H01L21/28247 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L31/1868 ,  H01L33/44

Abstract: Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.

公开(公告)号：US20160329243A1

公开(公告)日：2016-11-10

申请号：US14707648

申请日：2015-05-08

Applicant: MACRONIX International Co., Ltd.

Inventor： Yuan-Chieh Chiu ,  Shih-Ping Hong ,  Kuang-Chao Chen ,  Yen-Ju Chen

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/29 ,  H01L23/31 ,  H01L23/532 ,  H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/28247 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L31/1868 ,  H01L33/44

Abstract: Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.

Abstract translation: 提供一种制造半导体器件的方法，包括以下步骤。 提供基板。 在基板上形成具有开口的材料层。 在开口的侧壁和衬底上形成第一钝化材料层。 对第一钝化材料层进行处理工艺以形成第二钝化材料层。 第二钝化材料层的第一表面和第二钝化材料层的第二表面（在内侧）的性质不同，并且第一表面位于第二钝化材料层的相对远离第二钝化材料层的一侧 材料层。

公开(公告)号：US20180233375A1

公开(公告)日：2018-08-16

申请号：US15955549

申请日：2018-04-17

Applicant: MACRONIX International Co., Ltd.

Inventor： Yuan-Chieh Chiu ,  Shih-Ping Hong ,  Kuang-Chao Chen ,  Yen-Ju Chen

IPC: H01L21/311 ,  H01L23/522 ,  H01L23/485 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/532 ,  H01L23/31 ,  H01L21/28 ,  H01L33/44 ,  H01L31/18

CPC classification number: H01L21/31111 ,  H01L21/28247 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L31/1868 ,  H01L33/44

Abstract: Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.