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    DEEP ULTRAVIOLET LED AND METHOD FOR PRODUCING THE SAME
    1.
    发明申请
    DEEP ULTRAVIOLET LED AND METHOD FOR PRODUCING THE SAME 有权

    公开(公告)号：US20210036186A1

    公开(公告)日：2021-02-04

    申请号：US16964881

    申请日：2019-01-25

    申请人： MARUBUN CORPORATION ,  SHIBAURA MACHINE CO., LTD. ,  RIKEN ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD. ,  NIPPON TUNGSTEN CO., LTD. ,  DAI NIPPON PRINTING CO., LTD. ,  DOWA HOLDINGS CO., LTD.

    发明人： Yukio KASHIMA ,  Eriko MATSUURA ,  Mitsunori KOKUBO ,  Takaharu TASHIRO ,  Hideki HIRAYAMA ,  Noritoshi MAEDA ,  Masafumi JO ,  Ryuichiro KAMIMURA ,  Yamato OSADA ,  Kanji FURUTA ,  Takeshi IWAI ,  Yohei AOYAMA ,  Yasushi IWAISAKO ,  Tsugumi NAGANO ,  Yasuhiro WATANABE

    IPC分类号： H01L33/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40

    摘要： A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

    ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS HAVING THE SAME
    3.
    发明申请
    ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS HAVING THE SAME 有权
    超紫外线发光二极管和具有该发光二极管的电子设备

    公开(公告)号：US20150311392A1

    公开(公告)日：2015-10-29

    申请号：US14695786

    申请日：2015-04-24

    申请人： RIKEN

    发明人： Hideki HIRAYAMA ,  Noritoshi MAEDA ,  Masafumi JO

    IPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/40

    CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/405

    摘要： To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided.

    摘要翻译： 为了提高深紫外发光二极管（DUVLED）的光提取效率，典型的LED元件具有由蓝宝石或AlN制成的单晶衬底。紫外线层被布置为具有n型导电层的膜堆叠， 复合层和p型导电层。 p型接触层和反射电极的叠层设置在p型导电层上。 紫外线发射层和p型接触层由AlN和GaN的混合晶体制成。 p型接触层的发射波长的透射率增加，光提取效率提高。 还提供了一种其p型接触层被构造成层状结构并且其反射电极被图案化的LED元件。 此外，提供具有这种LED元件的电器。