公开(公告)号：US20170125635A1

公开(公告)日：2017-05-04

申请号：US15409388

申请日：2017-01-18

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC: H01L33/14 ,  H01L51/50 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

公开(公告)号：US10053622B2

公开(公告)日：2018-08-21

申请号：US13935551

申请日：2013-07-04

Applicant: Massachusetts Institute of Technology

Inventor： Jonathan E. Halpert ,  Jonathan Tischler ,  Moungi G. Bawendi ,  Vladimir Bulovic

IPC: C09K11/06 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88

CPC classification number: C09K11/06 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  C09K2211/10

Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.

公开(公告)号：US20170327740A1

公开(公告)日：2017-11-16

申请号：US15362756

申请日：2016-11-28

Applicant: Massachusetts Institute of Technology

Inventor： Jonathan E. Halpert ,  Polina O. Anikeeva ,  Moungi G. Bawendi ,  Vladimir Bulovic

IPC: C09K11/88 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  B82Y40/00 ,  B82Y20/00

Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.

公开(公告)号：US10014438B2

公开(公告)日：2018-07-03

申请号：US15409388

申请日：2017-01-18

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC: H01L33/14 ,  H01L33/18 ,  H01L51/50 ,  H01L33/06

CPC classification number: H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/005 ,  H01L33/06 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.