公开(公告)号：US20140035077A1

公开(公告)日：2014-02-06

申请号：US14015301

申请日：2013-08-30

Applicant: Massachusetts Institute of Technology

Inventor： Alexi Arango ,  Vladmir Bulovic ,  Vanessa Wood ,  Moungi G. Bawendi

IPC: H01L31/0352

CPC classification number: H01L31/035272 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/03925 ,  H01L51/4213 ,  H01L51/426 ,  Y02E10/549

Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract translation: 光电器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。

公开(公告)号：US20170125635A1

公开(公告)日：2017-05-04

申请号：US15409388

申请日：2017-01-18

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC: H01L33/14 ,  H01L51/50 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

公开(公告)号：US09224895B2

公开(公告)日：2015-12-29

申请号：US14015301

申请日：2013-08-30

Applicant: Massachusetts Institute of Technology

Inventor： Alexi Arango ,  Vladimir Bulovic ,  Vanessa Wood ,  Moungi G. Bawendi

IPC: H01L51/42 ,  H01L31/0352 ,  H01L31/0392

CPC classification number: H01L31/035272 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/03925 ,  H01L51/4213 ,  H01L51/426 ,  Y02E10/549

Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract translation: 光电器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。

公开(公告)号：US10014438B2

公开(公告)日：2018-07-03

申请号：US15409388

申请日：2017-01-18

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Moungi G. Bawendi ,  Vladimir Bulovic ,  Seth Coe-Sullivan ,  Jean-Michel Caruge ,  Jonathan Steckel ,  Jonathan E. Halpert ,  Alexi Arango

IPC: H01L33/14 ,  H01L33/18 ,  H01L51/50 ,  H01L33/06

CPC classification number: H01L33/14 ,  B65D71/36 ,  B65D81/261 ,  B65D2571/00141 ,  B65D2571/0045 ,  B65D2571/00574 ,  B65D2571/0066 ,  B65D2571/00728 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/005 ,  H01L33/06 ,  H01L33/18 ,  H01L33/26 ,  H01L33/42 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/5048 ,  H01L51/5096 ,  H01L2933/0041

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.