公开(公告)号：US3658610A

公开(公告)日：1972-04-25

申请号：US3658610D

申请日：1967-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ARITA SHIGERU ,  KAMEI ICHIZO ,  OKUMURA TOMISABURO

IPC: H01L21/306 ,  C23F1/02 ,  H01L21/00 ,  H01L21/033 ,  H01L21/316 ,  H01L23/29 ,  H01L7/00 ,  H01L7/50

CPC classification number: H01L21/00 ,  C23F1/02 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/033 ,  H01L21/31662 ,  H01L23/293 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/106 ,  H01L2924/00

Abstract: A method of pattern-etching a passivation layer on the surface of a semiconductor body by means of the photoresist technique, said passivation layer consisting of laminated two layers, of which the solving speed of the upper layer in an etchant is higher than that of the lower layer; in which the lower layer is formed first, followed by etching into the desired pattern, the upper layer is next formed over the whole surface, then a photoresist film is applied in the identical pattern to the lower one, and finally the area or areas of the upper layer exposed at an opening or openings are etched away, whereby the defect that the upper layer having higher solubility is exclusively sideetched at the periphery of the pattern can be avoided.

Abstract translation: 通过光致抗蚀剂技术对半导体本体表面上的钝化层图案蚀刻的方法，所述钝化层由层压的两层组成，其中蚀刻剂中上层的求解速度高于 下层 其中首先形成下层，然后蚀刻成所需图案，然后在整个表面上形成上层，然后将光致抗蚀剂膜以相同的图案施加到下层，最后以 可以避免在开口或开口处露出的上层，从而可以避免在图案周边仅对侧面蚀刻具有较高溶解度的上层的缺陷。