公开(公告)号：US3675161A

公开(公告)日：1972-07-04

申请号：US3675161D

申请日：1969-10-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO IWAO ,  IWASA HITOO ,  MIYAI YUKIO ,  TAKESHIMA MASUMI

IPC: H01L29/864 ,  H03B9/14 ,  H03C3/22

CPC classification number: H03B9/141 ,  H01L29/864 ,  H03C3/22

Abstract: A solid state microwave generating device comprising a 3terminal element having a p-n junction representing a negative resistance and a junction of which the junction capacitance is varied according to a voltage applied thereto. A reverse voltage is imparted to said p-n junction so that the latter is maintained in a negative resistance condition resulting from an avalanche current. The other junction is set to a suitable reactance value so as to produce a microwave of a tuned wavelength, and under such a condition a modulating signal is supplied in superimposition to said other junction to thereby change the reactance value thereof, thus effecting microwave modulation. With this device, the oscillation wave occurring in a resonator circuit is controlled in accordance with lumped constants so that the tuning operation of the resonant circuit, modulation (FM), automatic frequency control (AFC) and so forth can be easily and efficiently performed.

Abstract translation: 一种固态微波发生装置，包括具有代表负电阻的p-n结的3端元件和结电容根据施加到其上的电压而变化的结。 向所述p-n结施加反向电压，使得后者被维持在由雪崩电流引起的负电阻状态。 另一个接点被设置为合适的电抗值，以便产生调谐波长的微波，并且在这种条件下，调制信号被叠加到所述另一个结，从而改变其电抗值，从而进行微波调制。 利用该装置，根据集总常数来控制在谐振电路中发生的振荡波，从而可以容易且有效地执行谐振电路，调制（FM），自动频率控制（AFC）等的调谐操作。

公开(公告)号：US3494730A

公开(公告)日：1970-02-10

申请号：US3494730D

申请日：1967-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAI HIDEO ,  TERAMOTO IWAO

IPC: C01B19/00 ,  C30B9/00 ,  C01G11/00

CPC classification number: C01B19/007 ,  C01P2004/61 ,  C30B9/00 ,  C30B29/48

Abstract: 1,129,789. Cadmium telluride crystals. MATSUSHITA ELECTRONICS CORP. 13 March, 1967 [26 March, 1966], No. 11710/67. Heading C1A. [Also in Division B1] Crystals of cadmium telluride are produced by mixing cadmium chloride with more than 24 mol per cent of cadmium telluride, or an equivalent equimolar mixture of metallic cadmium and tellurium, and fusing the whole at a temperature between 490‹ and 1090‹ C., and then cooling the resultant solution, or evaporating cadmium chloride from the mixture. A single crystal of CdTe may be provided in the solution whereby an epitaxial layer of CdTe is grown thereon.

公开(公告)号：US3630796A

公开(公告)日：1971-12-28

申请号：US3630796D

申请日：1968-06-10

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI ,  IWASA HITOO ,  TERAMOTO IWAO

IPC: C23C16/40 ,  H01L23/29 ,  H01L7/00 ,  H01L7/50

CPC classification number: C23C16/405 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for forming a titanium dioxide film which has recently been recognized to be useful for an insulating material for film capacitors and other electric circuit, by feeding a mixed gas of vapor of organo oxy titanium compound, oxygen and carrier gas to the surface of heated baseplate to grow an amorphouslike titanium dioxide film on said surface of baseplate, and if necessary, crystallizing said titanium dioxide film with a heat treatment in order to stabilize the film.

公开(公告)号：US3556841A

公开(公告)日：1971-01-19

申请号：US3556841D

申请日：1968-04-04

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IWASA HITOO ,  YOKOZAWA MASAMI ,  TERAMOTO IWAO

IPC: C23C16/40 ,  H01L21/316 ,  C23C11/08

CPC classification number: H01L21/02164 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31612

Abstract: SILICON DIOXIDE FILM IS FORMED ON THE SURFACE OF A SEMICONDUCTOR SUBSTRATE BY THE THERMAL DECOMPOSITION OF A MIXED GAS COMPRISING A VAPOR OF AN ORGANO-OXYSILANE, A VAPOR OF AN ALIPHATIC CARBOXYLIC ACID SUCH AS ACETIC ACID, AND AN INERT GAS. THE USE OF SAID MIXED GAS RESULTS IN SUCH ADVANTAGES THAT THE REACTION CAN PROCEED AT SUCH A LOW TEMPERATURE WITHIN THE RANGE OF 300 TO 600*C AND THE VARIATION IN CHARACTERISTIC OF SILICON DIOXIDE AT THE DEPOSITION STEP CAN BE REDUCED.

公开(公告)号：US3531320A

公开(公告)日：1970-09-29

申请号：US3531320D

申请日：1967-11-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IWASA HITOO ,  YOKOZAWA MASAMI ,  TAI HIDEO ,  TERAMOTO IWAO

IPC: C23C18/36 ,  H01L21/288 ,  C23C3/00

CPC classification number: H01L21/288 ,  C23C18/36