公开(公告)号：US3630796A

公开(公告)日：1971-12-28

申请号：US3630796D

申请日：1968-06-10

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI ,  IWASA HITOO ,  TERAMOTO IWAO

IPC: C23C16/40 ,  H01L23/29 ,  H01L7/00 ,  H01L7/50

CPC classification number: C23C16/405 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for forming a titanium dioxide film which has recently been recognized to be useful for an insulating material for film capacitors and other electric circuit, by feeding a mixed gas of vapor of organo oxy titanium compound, oxygen and carrier gas to the surface of heated baseplate to grow an amorphouslike titanium dioxide film on said surface of baseplate, and if necessary, crystallizing said titanium dioxide film with a heat treatment in order to stabilize the film.

公开(公告)号：US3634931A

公开(公告)日：1972-01-18

申请号：US3634931D

申请日：1969-12-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  YOKOZAWA MASAMI ,  KAWASAKI TATSUO ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA

IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  B01J17/00 ,  H01L7/02

CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L29/00

Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.

Abstract translation: 在具有所谓的晶闸管特性的具有四层结构的半导体器件中，当用于控制其跳变电压的控制电极由肖特基势垒构成并且对屏障施加应力的装置时，所述 半导体器件可以通过应力控制。 如果该设备组装在电路系统中，则电路系统可以设置为对应于施加的应力的“关闭”或“开启”状态。

公开(公告)号：US3615945A

公开(公告)日：1971-10-26

申请号：US3615945D

申请日：1969-06-11

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI

IPC: B60P1/16 ,  C30B31/06 ,  H01L21/00 ,  H01L21/22 ,  H01L7/44

CPC classification number: H01L21/00 ,  B60P1/16 ,  C30B31/06 ,  H01L21/22 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/151

Abstract: A deep aluminum-diffused P-type layer and a shallow-diffused layer of a preselected conductivity type are simultaneously diffused into a semiconductor substrate by a double diffusion process which employs a composite impurity source. The composite impurity source consists of an aluminum receptacle having a predetermined amount of at least one shallow diffusing, conductivity type determining impurity enclosed therein. The receptacle may be fabricated from a uniformly thick aluminum foil and the shallow diffusing impurity may consist of, for example, boron, phosphorus, indium and/or antimony.

公开(公告)号：US3698945A

公开(公告)日：1972-10-17

申请号：US3698945D

申请日：1970-07-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI ,  IWASA HITOO

IPC: H01L23/29 ,  H01L23/31 ,  B44D1/02

CPC classification number: H01L23/291 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SEMICONDUCTOR DEVICE WITH AT LEAST ONE PN JUNCTION AND A METHOD OF MANUFACTURING THE SAME WHEREIN A PASSIVATING FILM OR A SURFACE FILM FOR INSULATION IS MADE OF A CHEMICAL MIXTURE OF OXIDES COMPOSED OF SIO2-TIO2 SO THAT THE BREAKDOWN VOLTAGE AND ELECTRICAL STABILITY OF SAID PN JUNCTION CAN BE INCREASED. THIS EFFECT IS BASED ON THE SUPPRESSION OF MOVEMENT OF ALKALI IONS IN SAID FILM WITH THE MIXTURE OF OXIDES. THE FILM WITH THE MIXTURE OF OXIDES COMPOSED OF SIO2-TIO2 IS OBTAINED WITH A METHOD WHERE VAPORS OF ORGANO-OXY-SILICON COMPOUND AND ORGANO-OXY-TITANIUM COMPOUND ARE LED INTO A SUBSTRATE, WHICH IS HEATED AND SUSTAINED AT A PREDETERMINED TEMPERATURE, AND PYROLIZED ON A SURFACE OF THE SUBSTRATE TO MAKE THE FILM.

公开(公告)号：US3629666A

公开(公告)日：1971-12-21

申请号：US3629666D

申请日：1968-11-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI ,  IWASA HITOO

IPC: H01L21/316 ,  H01L23/31 ,  H01L9/00

CPC classification number: H01L21/31604 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device with at least one PN junction and a method of manufacturing the same wherein a passivating film or a surface film for insulation is made of a chemical mixture of oxides composed of SiO2-TiO2 so that the breakdown voltage and electrical stability of said PN junction can be increased. This effect is based on the suppression of movement of alkali ions in said film with the mixture of oxides. The film with the mixture of oxides composed of SiO2-TiO2 is obtained with a method where vapors of organo-oxy-silicon compound and organo-oxy-titanium compound are led onto a substrate, with which is heated and sustained at a predetermined temperature, and pyrolized on a surface of the substrate to make the film.

公开(公告)号：US3556841A

公开(公告)日：1971-01-19

申请号：US3556841D

申请日：1968-04-04

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IWASA HITOO ,  YOKOZAWA MASAMI ,  TERAMOTO IWAO

IPC: C23C16/40 ,  H01L21/316 ,  C23C11/08

CPC classification number: H01L21/02164 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31612

Abstract: SILICON DIOXIDE FILM IS FORMED ON THE SURFACE OF A SEMICONDUCTOR SUBSTRATE BY THE THERMAL DECOMPOSITION OF A MIXED GAS COMPRISING A VAPOR OF AN ORGANO-OXYSILANE, A VAPOR OF AN ALIPHATIC CARBOXYLIC ACID SUCH AS ACETIC ACID, AND AN INERT GAS. THE USE OF SAID MIXED GAS RESULTS IN SUCH ADVANTAGES THAT THE REACTION CAN PROCEED AT SUCH A LOW TEMPERATURE WITHIN THE RANGE OF 300 TO 600*C AND THE VARIATION IN CHARACTERISTIC OF SILICON DIOXIDE AT THE DEPOSITION STEP CAN BE REDUCED.

公开(公告)号：US3531320A

公开(公告)日：1970-09-29

申请号：US3531320D

申请日：1967-11-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IWASA HITOO ,  YOKOZAWA MASAMI ,  TAI HIDEO ,  TERAMOTO IWAO

IPC: C23C18/36 ,  H01L21/288 ,  C23C3/00

CPC classification number: H01L21/288 ,  C23C18/36