公开(公告)号：US20240403177A1

公开(公告)日：2024-12-05

申请号：US18678557

申请日：2024-05-30

Applicant: Micron Technology, Inc.

Inventor： Su Wei Lim ,  Senthil Murugan Thangaraj ,  Marco Sforzin ,  Daniele Balluchi ,  Massimiliano Patriarca ,  Giorgio Servalli ,  Angelo Visconti ,  Antonino Capri’ ,  Garth N. Grubb ,  Amitava Majumdar ,  Miguel Mares

IPC: G06F11/20 ,  G06F11/14

Abstract: Correctable error pattern information for a memory device can be based on data received from or using a data pin of the memory device. The memory device can include, for example, a DRAM device comprising an array of memory cells. Based on the error pattern information, firmware or software can be used to identify respective physical portions of the array comprising data with correctable errors. In an example, one or more fault locations in the memory device can be identified, the fault location corresponding to multiple cells in the array and comprising the data with correctable errors. In response to identifying the fault location in the array, one or more memory pages corresponding to the location(s) can be offlined or removed from an addressable memory space. In an example, the memory device comprises a portion of a compute express link (CXL) system.

公开(公告)号：US12170107B2

公开(公告)日：2024-12-17

申请号：US17808818

申请日：2022-06-24

Applicant: Micron Technology, Inc.

Inventor： Shawn M. Hilde ,  Dennis G. Montierth ,  Garth N. Grubb

IPC: G11C11/406

Abstract: Methods, systems, and devices for a self-refresh state with decreased power consumption are described. A memory system may enter a self-refresh state to refresh a set of rows of memory cells at the memory system. Based on entering the self-refresh state, the memory system may execute a first set of refresh operations on the rows of memory cells according to a first rate. Additionally, the memory system may determine, while in the self-refresh state, whether to decrease the rate for executing the refresh operations to a second rate based on whether each of the rows of memory cells is refreshed according to the first rate. In cases that the memory system determines to decrease the rate for executing the refresh operations, the memory system may execute a set of second refresh operations on the rows of memory cells according to the second, slower, rate while in the self-refresh state.

公开(公告)号：US20240311231A1

公开(公告)日：2024-09-19

申请号：US18525395

申请日：2023-11-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sujeet Ayyapureddi ,  Wesley W. Borie ,  Dennis G. Montierth ,  Garth N. Grubb ,  Mow Yiak Goh ,  Anthony M. Geidl

IPC: G06F11/10 ,  G06F12/02

CPC classification number: G06F11/10 ,  G06F12/0292 ,  G06F2212/1032

Abstract: An exemplary host includes a data mapping decoder configured to decode a swizzle mapping signal received from a memory module to provide a data mapping setting, a data input/output circuit configured to receive a plurality of data bits from the memory module via a data bus, and a data adjustment circuit configured to re-arrange an order of the plurality of data bits based on the data mapping setting to provide a plurality of adjusted data bits.

公开(公告)号：US20250078898A1

公开(公告)日：2025-03-06

申请号：US18952772

申请日：2024-11-19

Applicant: Micron Technology, Inc.

Inventor： Shawn M. Hilde ,  Dennis G. Montierth ,  Garth N. Grubb

IPC: G11C11/406

Abstract: Methods, systems, and devices for a self-refresh state with decreased power consumption are described. A memory system may enter a self-refresh state to refresh a set of rows of memory cells at the memory system. Based on entering the self-refresh state, the memory system may execute a first set of refresh operations on the rows of memory cells according to a first rate. Additionally, the memory system may determine, while in the self-refresh state, whether to decrease the rate for executing the refresh operations to a second rate based on whether each of the rows of memory cells is refreshed according to the first rate. In cases that the memory system determines to decrease the rate for executing the refresh operations, the memory system may execute a set of second refresh operations on the rows of memory cells according to the second, slower, rate while in the self-refresh state.

公开(公告)号：US20240311238A1

公开(公告)日：2024-09-19

申请号：US18525354

申请日：2023-11-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Wesley W. Borie ,  Dennis G. Montierth ,  Garth N. Grubb ,  Mow Yiak Goh ,  Anthony M. Geidl

IPC: G06F11/10 ,  G06F11/16 ,  G11C8/08 ,  G11C17/16

CPC classification number: G06F11/1068 ,  G06F11/1654 ,  G11C8/08 ,  G11C17/16

Abstract: An exemplary memory includes a first sub-wordline (SWL) driver configured to provide first data from a memory cell array, a second SWL driver configured to provide second data from a memory cell array, and an input/output (I/O) circuit configured to receive the first data and the second data from the first and second SWL drivers, respectively. The I/O circuit including a data terminal mapping circuit configured to selectively route the first data and the second data to different respective data terminal based on a data terminal mapping setting.

公开(公告)号：US20230420023A1

公开(公告)日：2023-12-28

申请号：US17808818

申请日：2022-06-24

Applicant: Micron Technology, Inc.

Inventor： Shawn M. Hilde ,  Dennis G. Montierth ,  Garth N. Grubb

IPC: G11C11/406

CPC classification number: G11C11/40615

Abstract: Methods, systems, and devices for a self-refresh state with decreased power consumption are described. A memory system may enter a self-refresh state to refresh a set of rows of memory cells at the memory system. Based on entering the self-refresh state, the memory system may execute a first set of refresh operations on the rows of memory cells according to a first rate. Additionally, the memory system may determine, while in the self-refresh state, whether to decrease the rate for executing the refresh operations to a second rate based on whether each of the rows of memory cells is refreshed according to the first rate. In cases that the memory system determines to decrease the rate for executing the refresh operations, the memory system may execute a set of second refresh operations on the rows of memory cells according to the second, slower, rate while in the self-refresh state.