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公开(公告)号:US20240403177A1
公开(公告)日:2024-12-05
申请号:US18678557
申请日:2024-05-30
Applicant: Micron Technology, Inc.
Inventor: Su Wei Lim , Senthil Murugan Thangaraj , Marco Sforzin , Daniele Balluchi , Massimiliano Patriarca , Giorgio Servalli , Angelo Visconti , Antonino Capri’ , Garth N. Grubb , Amitava Majumdar , Miguel Mares
Abstract: Correctable error pattern information for a memory device can be based on data received from or using a data pin of the memory device. The memory device can include, for example, a DRAM device comprising an array of memory cells. Based on the error pattern information, firmware or software can be used to identify respective physical portions of the array comprising data with correctable errors. In an example, one or more fault locations in the memory device can be identified, the fault location corresponding to multiple cells in the array and comprising the data with correctable errors. In response to identifying the fault location in the array, one or more memory pages corresponding to the location(s) can be offlined or removed from an addressable memory space. In an example, the memory device comprises a portion of a compute express link (CXL) system.
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公开(公告)号:US20250085851A1
公开(公告)日:2025-03-13
申请号:US18784292
申请日:2024-07-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Su Wei Lim
IPC: G06F3/06
Abstract: A system can include a memory; and a processing device, operatively coupled with the memory, to perform operations including: partitioning the memory into a plurality of memory partitions, wherein each of the plurality of memory partitions is associated with a corresponding partition identifier; receiving a host command to access data; identifying a compression ratio of the data; identifying a memory partition among the plurality of memory partitions; identifying a location among a plurality of locations on the memory partition by using a segment identifier and a unit offset address, wherein each of the plurality of locations is associated with a corresponding segment identifier, and wherein the unit offset address is determined in view of a compression ratio range associated with the memory partition; and performing an operation regarding the data at the identified location on the memory partition.
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公开(公告)号:US20240404581A1
公开(公告)日:2024-12-05
申请号:US18667791
申请日:2024-05-17
Applicant: Micron Technology, Inc.
Inventor: Ameen D. Akel , Brent Keeth , James Brian Johnson , Chun-Yi Liu , Shivasankar Gunasekaran , Paul A. Laberge , Gregory A. King , Sai Krishna Mylavarapu , Su Wei Lim , Nathan A. Eckel , Lance P. Johnson , Nathan D. Henningson
IPC: G11C11/4093 , H01L23/00 , H01L25/065 , H01L25/18 , H10B80/00
Abstract: Methods, systems, and devices for interface techniques for stacked memory architectures are described. A semiconductor system, such as a memory system, may distribute memory access circuitry among multiple semiconductor dies of a stack. A first die of the system may include logic circuitry operable to configure a set of multiple first interface blocks of the first die. Each first interface block may include circuitry operable to communicate with one or more second interface blocks of one or more second dies of the system to access a respective set of one or more memory arrays of the one or more second dies. In some examples, the system may include a respective controller for each first interface block to support access operations via the first interface block. The system may also include non-volatile storage, one or more sensors, or a combination thereof to support various operations of the system.
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