公开(公告)号：US20200219568A1

公开(公告)日：2020-07-09

申请号：US16484881

申请日：2018-12-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Hua Tan ,  Jingxun Eric Wu ,  Yingying Zhu ,  Hui Yang ,  Bo Zhou

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/26 ,  G06F3/06

Abstract: A memory device comprises a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

公开(公告)号：US20210391013A1

公开(公告)日：2021-12-16

申请号：US17458211

申请日：2021-08-26

Applicant: Micron Technology, Inc.

Inventor： Hua Tan ,  Jingxun Eric Wu ,  Yingying Zhu ,  Hui Yang ,  Bo Zhou

IPC: G11C16/10 ,  G11C16/04 ,  G06F3/06 ,  G11C16/26 ,  G11C16/06 ,  G11C29/10 ,  G11C29/50

Abstract: A memory device comprises a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

公开(公告)号：US11670375B2

公开(公告)日：2023-06-06

申请号：US17458211

申请日：2021-08-26

Applicant: Micron Technology, Inc.

Inventor： Hua Tan ,  Jingxun Eric Wu ,  Yingying Zhu ,  Hui Yang ,  Bo Zhou

IPC: G11C16/04 ,  G11C16/10 ,  G06F3/06 ,  G11C16/26 ,  G11C16/06 ,  G11C29/10 ,  G11C29/50

CPC classification number: G11C16/10 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C29/10 ,  G11C29/50

Abstract: A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

公开(公告)号：US11107533B2

公开(公告)日：2021-08-31

申请号：US16484881

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Hua Tan ,  Jingxun Eric Wu ,  Yingying Zhu ,  Hui Yang ,  Bo Zhou

IPC: G11C16/04 ,  G11C16/10 ,  G06F3/06 ,  G11C16/26 ,  G11C16/06 ,  G11C29/10 ,  G11C29/50

Abstract: A memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.