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12 条记录 (耗时 0.016 秒)

    Semiconductor module
    1.
    发明授权
    Semiconductor module 有权

    公开(公告)号：US10224257B2

    公开(公告)日：2019-03-05

    申请号：US15533327

    申请日：2015-01-27

    申请人： Mitsubishi Electric Corporation

    发明人： Goro Yasutomi ,  Kazuhiro Morishita ,  Ryutaro Date

    IPC分类号： H01L23/24 ,  H01L23/28 ,  H01L25/07 ,  H01L25/18 ,  H01L23/14 ,  H01L23/532 ,  H01L23/16 ,  H01L23/528 ,  H01L23/00

    摘要： It is an object of the present invention to provide a semiconductor module that reduces an excessive stress on a sealed object due to the expansion and contraction of a sealing gel to thus improve the reliability. A semiconductor module according to the present invention includes: a semiconductor element bonded to a metal pattern on an insulating substrate contained in a case; a sealing gel sealing the insulating substrate and the semiconductor element within the case; and a sealing-gel-expansion suppressing plate disposed in the upper portion of the sealing gel to be at least partially in contact with the sealing gel. The sealing-gel-expansion suppressing plate includes a surface facing the sealing gel and inclined to the upper surface of the sealing gel.

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11488896B2

    公开(公告)日：2022-11-01

    申请号：US15742588

    申请日：2015-09-28

    申请人： Mitsubishi Electric Corporation

    发明人： Yukimasa Hayashida ,  Shigeru Hasegawa ,  Ryo Tsuda ,  Ryutaro Date ,  Junichi Nakashima

    IPC分类号： H01L23/495 ,  H01L25/065 ,  H01L23/50 ,  H01L23/00

    摘要： An object is to provide a technique capable of enhancing electrical characteristics and reliability of a semiconductor device. The semiconductor device includes a plurality of semiconductor chips, a plurality of electrodes each being electrically connected to each of the plurality of semiconductor chips, a sealing member, and a joint part. The sealing member covers the plurality of semiconductor chips, and parts being connected to the plurality of semiconductor chips, of the plurality of electrodes. The joint part is disposed outside the sealing member to electrically connect parts which are not covered by the sealing member, of the plurality of electrodes.

    Semiconductor device and semiconductor module provided with same
    6.
    发明授权
    Semiconductor device and semiconductor module provided with same 有权

    公开(公告)号：US10361136B2

    公开(公告)日：2019-07-23

    申请号：US15742608

    申请日：2015-09-29

    申请人： Mitsubishi Electric Corporation

    发明人： Shigeru Hasegawa ,  Isao Umezaki ,  Ryo Tsuda ,  Yukimasa Hayashida ,  Ryutaro Date

    IPC分类号： H01L21/31 ,  H01L23/13 ,  H01L25/07 ,  H01L25/18 ,  H01L23/00

    摘要： It is an object of the present invention to provide a semiconductor device which allows an increase in the number of semiconductor elements mounted in parallel and prevents a shape of an insulating substrate onto which the semiconductor elements are mounted, from being laterally long, and provide a semiconductor module including such semiconductor device. A semiconductor device according to the present invention includes an insulating substrate, a metal pattern which is a continuous piece and is bonded to one main surface of the insulating substrate, and a plurality of switching elements which are bonded to a surface opposite to the insulating substrate on the metal pattern, and the plurality of switching elements are arranged in a matrix of two or more rows and two or more columns on the metal pattern.

    Semiconductor module and power conversion device
    8.
    发明授权
    Semiconductor module and power conversion device 有权

    公开(公告)号：US11063025B2

    公开(公告)日：2021-07-13

    申请号：US16632029

    申请日：2018-08-27

    申请人： Mitsubishi Electric Corporation

    发明人： Junichi Nakashima ,  Shota Morisaki ,  Yoshiko Tamada ,  Yasushi Nakayama ,  Tetsu Negishi ,  Ryo Tsuda ,  Yukimasa Hayashida ,  Ryutaro Date

    IPC分类号： H01L25/07 ,  H01L23/00 ,  H02P27/06

    摘要： Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10804253B2

    公开(公告)日：2020-10-13

    申请号：US16088735

    申请日：2016-08-10

    申请人： Mitsubishi Electric Corporation

    发明人： Yukimasa Hayashida ,  Ryo Tsuda ,  Ryutaro Date

    IPC分类号： H01L23/00 ,  H01L25/18

    摘要： First and second circuit patterns (5,6) are provided on an insulating substrate (1). First and second semiconductor chips (7,8) are provided on the first circuit pattern (5). A relay circuit pattern (10) is provided between the first semiconductor chip (7) and the second semiconductor chip (8) on the insulating substrate (1). A wire (11) is continuously connected to the first semiconductor chip (7), the relay circuit pattern (10), the second semiconductor chip (8) and the second circuit pattern (6) which are sequentially arranged in one direction.

    Power semiconductor device
    10.
    发明授权
    Power semiconductor device 有权

    公开(公告)号：US10483175B2

    公开(公告)日：2019-11-19

    申请号：US15758349

    申请日：2015-12-04

    申请人： Mitsubishi Electric Corporation

    发明人： Shoko Araki ,  Yukimasa Hayashida ,  Ryutaro Date

    IPC分类号： H01L23/053 ,  H01L23/04 ,  H01L25/07 ,  H01L25/18 ,  H05K7/06 ,  H01L23/00

    摘要： An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.