公开(公告)号：US11063025B2

公开(公告)日：2021-07-13

申请号：US16632029

申请日：2018-08-27

Applicant: Mitsubishi Electric Corporation

Inventor： Junichi Nakashima ,  Shota Morisaki ,  Yoshiko Tamada ,  Yasushi Nakayama ,  Tetsu Negishi ,  Ryo Tsuda ,  Yukimasa Hayashida ,  Ryutaro Date

IPC: H01L25/07 ,  H01L23/00 ,  H02P27/06

Abstract: Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

公开(公告)号：US12081115B2

公开(公告)日：2024-09-03

申请号：US17796269

申请日：2020-03-24

Applicant: Mitsubishi Electric Corporation

Inventor： Yohei Mitsui ,  Yasutaka Imamura ,  Junichi Nakashima

IPC: H02M1/32 ,  G01K7/24 ,  H02H5/04 ,  H03K17/08

CPC classification number: H02M1/327 ,  G01K7/245 ,  H02H5/04 ,  H03K2017/0806

Abstract: A semiconductor drive device includes a drive circuit that drives a semiconductor switching element, a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element, a switching element connected in series to the passive element, a control circuit that controls the switching element, and a temperature detection circuit that detects a temperature of the semiconductor switching element. The control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.

公开(公告)号：US11863166B2

公开(公告)日：2024-01-02

申请号：US17616692

申请日：2019-08-27

Applicant: Mitsubishi Electric Corporation

Inventor： Junichi Nakashima

IPC: H03K17/16 ,  H01L23/538 ,  H01L25/16 ,  H01L25/18 ,  H02M7/537 ,  H03K5/1252 ,  H01L23/00

CPC classification number: H03K17/16 ,  H01L23/5386 ,  H01L25/16 ,  H01L25/18 ,  H02M7/537 ,  H03K5/1252 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/1033 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: A power semiconductor module includes a semiconductor switching element, a gate control pattern to which a gate electrode of the semiconductor switching element is connected, a source control pattern to which a source electrode of the semiconductor switching element is connected, a capacitor to form a low-pass filter, a capacitor arrangement pattern to which one end of the capacitor is connected, and a wire. The other end of the capacitor is connected to the source control pattern. The wire electrically connects the capacitor arrangement pattern and the gate control pattern.

公开(公告)号：US09941255B2

公开(公告)日：2018-04-10

申请号：US15117963

申请日：2014-06-30

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Junichi Nakashima ,  Yoshiko Tamada ,  Yasushi Nakayama ,  Yukimasa Hayashida

IPC: H02M1/00 ,  H01L25/07 ,  H01L23/48 ,  H01L25/18 ,  H01L23/24 ,  H01L23/373 ,  H01L23/498 ,  H01L23/049 ,  H01L23/31 ,  H01L29/16 ,  H01L29/20 ,  H01L29/41 ,  H01L29/861

CPC classification number: H01L25/072 ,  H01L23/049 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/3735 ,  H01L23/48 ,  H01L23/49811 ,  H01L23/645 ,  H01L25/07 ,  H01L25/18 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41 ,  H01L29/861 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/48111 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

公开(公告)号：US12233793B2

公开(公告)日：2025-02-25

申请号：US18019248

申请日：2020-09-07

Applicant: Mitsubishi Electric Corporation

Inventor： Junichi Nakashima ,  Kenji Fujiwara ,  Kozo Harada ,  Kunihiko Tajiri ,  Yuji Shirakata

IPC: B60R16/03 ,  H02M7/00 ,  H02M7/48

Abstract: A power conversion apparatus includes a hermetic housing, a power semiconductor module, and dry gas. The hermetic housing includes a gas inlet valve and a gas outlet valve. The power semiconductor module is arranged in an internal space in the hermetic housing. The internal space in the hermetic housing is filled with dry gas.

公开(公告)号：US10727213B2

公开(公告)日：2020-07-28

申请号：US16320500

申请日：2017-09-15

Applicant: Mitsubishi Electric Corporation

Inventor： Junichi Nakashima ,  Yoshiko Tamada ,  Yasushi Nakayama

IPC: H01L25/16 ,  H02M7/48 ,  H03H7/01 ,  H03H7/06 ,  H03H11/04 ,  H02M7/00 ,  H01L25/18 ,  H01L25/07 ,  H01L23/00 ,  H01L23/367

Abstract: Gates of semiconductor switching elements are connected to a gate control wiring pattern. The gate control wiring pattern is further connected to a gate control terminal and a filter terminal which are connected by an element for forming a filter outside a housing. The filter terminal and the gate control terminal are connected to the gate control wiring pattern in such a manner that a section electrically connecting the filter terminal and the gate control terminal overlaps with at least a part of a section electrically connecting the gates of the semiconductor switching elements on the gate control wiring pattern.

公开(公告)号：US09899328B2

公开(公告)日：2018-02-20

申请号：US15117327

申请日：2014-06-30

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Yoshiko Tamada ,  Junichi Nakashima ,  Yasushi Nakayama ,  Yukimasa Hayashida

IPC: H01L23/50 ,  H01L23/538 ,  H01L25/07 ,  H01L25/18 ,  H02M1/088 ,  H02M7/00 ,  H05K7/14 ,  H01L23/66 ,  H01L23/00

CPC classification number: H01L23/5386 ,  H01L23/50 ,  H01L23/5385 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2223/6611 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02M1/088 ,  H02M7/003 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements; a positive-side electrode, a negative-side electrode, and an AC electrode connected to the positive arm and the negative arm; and a substrate on which a plurality of wiring patterns are formed, the wiring patterns connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode, and the AC electrode. Respective directions of current flowing in adjacent wiring patterns are identical to each other, and one of the adjacent wiring patterns is arranged in mirror symmetry with the other of the adjacent wiring patterns.

公开(公告)号：US12183774B2

公开(公告)日：2024-12-31

申请号：US17417769

申请日：2019-02-22

Applicant: Mitsubishi Electric Corporation

Inventor： Shiro Hino ,  Junichi Nakashima ,  Takaaki Tominaga

IPC: H01L29/49 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H02M7/00

Abstract: To provide a technique of reducing gate oscillation while suppressing reduction in switching speed. A semiconductor device according to the technique disclosed in the present description includes: a first gate electrode in an active region; a gate pad in a first region different from the active region in a plan view; and a first gate line electrically connecting the first gate electrode and the gate pad to each other. The first gate line is formed into a spiral shape. The first gate line is made of a different type of material from the first gate electrode.

公开(公告)号：US11488896B2

公开(公告)日：2022-11-01

申请号：US15742588

申请日：2015-09-28

Applicant: Mitsubishi Electric Corporation

Inventor： Yukimasa Hayashida ,  Shigeru Hasegawa ,  Ryo Tsuda ,  Ryutaro Date ,  Junichi Nakashima

IPC: H01L23/495 ,  H01L25/065 ,  H01L23/50 ,  H01L23/00

Abstract: An object is to provide a technique capable of enhancing electrical characteristics and reliability of a semiconductor device. The semiconductor device includes a plurality of semiconductor chips, a plurality of electrodes each being electrically connected to each of the plurality of semiconductor chips, a sealing member, and a joint part. The sealing member covers the plurality of semiconductor chips, and parts being connected to the plurality of semiconductor chips, of the plurality of electrodes. The joint part is disposed outside the sealing member to electrically connect parts which are not covered by the sealing member, of the plurality of electrodes.

公开(公告)号：US11271043B2

公开(公告)日：2022-03-08

申请号：US16488752

申请日：2018-04-11

Applicant: Mitsubishi Electric Corporation

Inventor： Shota Morisaki ,  Yoshiko Tamada ,  Junichi Nakashima ,  Daisuke Oya

IPC: H01L27/30 ,  H01L27/108 ,  H02M7/48 ,  H01L29/739

Abstract: An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.