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公开(公告)号：US20180246405A1
公开(公告)日：2018-08-30
申请号：US15754794
申请日：2016-08-23
发明人： Hiroto KUDO , Masatoshi ECHIGO , Takumi TOIDA , Takashi SATO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , C07C395/00
CPC分类号： G03F7/0045 , C07C395/00 , G03F7/004 , G03F7/038 , G03F7/0382 , G03F7/039 , G03F7/0395 , G03F7/0397 , G03F7/20
摘要： A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.
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2.发明申请POLYMER COMPOUND, RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD 审中-公开聚合物化合物，辐射敏感组合物和图案形成方法公开(公告)号：US20170059989A1
公开(公告)日：2017-03-02
申请号：US15151087
申请日：2016-05-10
发明人： Hiroto KUDO , Masatoshi ECHIGO , Takumi TOIDA , Takashi SATO
CPC分类号： C08G65/40 , G03F7/0392 , G03F7/322 , G03F7/325
摘要： A polymer compound including a unit structure represented by the following general formula (1): wherein m1 equals 1 to 8, n1 equals 0 to 7, m1+n1 equals 4 to 8, m2 equals 1 to 8, n2 equals 0 to 7, m2+n2 equals 4 to 8, m1 equals m2, y represents 0 to 2, R1 represents a hydroxy group, a substituted or unsubstituted straight, branched or cyclic alkyl group, a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, each R2 independently represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, and R5 represents a hydroxy group or —O—R2—O—*.
摘要翻译： 其中m1等于1至8，n1等于0至7，m1 + n1等于4至8，m2等于1至8，n2等于0至7，m2 + n2等于4至8，m1等于m2，y表示0至2 R 1表示羟基，取代或未取代的直链，支链或环状烷基，取代或未取代的芳基或卤素原子，R 3表示氢原子，取代或未取代的直链，支链或环状烷基，或 取代或未取代的芳基，每个R 2独立地表示说明书中由通式（2）表示的任何结构，至少一个R 2具有酸解离位点，并且R 5表示羟基或-O-R 2 -O- 。
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3.发明申请POLYMER COMPOUND, RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD 审中-公开聚合物化合物，辐射敏感组合物和图案形成方法公开(公告)号：US20170058079A1
公开(公告)日：2017-03-02
申请号：US15151131
申请日：2016-05-10
发明人： Hiroto KUDO , Masatoshi ECHIGO , Takumi TOIDA , Takashi SATO
IPC分类号： C08G63/668 , G03F7/32 , G03F7/20 , G03F7/038 , G03F7/16
CPC分类号： C08G63/668 , G03F7/0392
摘要： A polymer compound including a unit structure represented by the general formula (1): wherein m1 and m2 each equal 1 to 8, n1 and n2 each equal 0 to 7, m1+n1 and m2+n2 each equal 4 to 8, y represents 0 to 2, R1 represents a hydroxy group; a substituted or unsubstituted straight, branched or cyclic alkyl group; a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, R2 represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, R5 represents a hydroxy group, —O—R2—O—* or —O—R2—O—R55, and R6 represents a hydroxy group or —O—R2—O—*.
摘要翻译： 其中m1和m2各自等于1至8，n1和n2各自等于0至7，m1 + n1和m2 + n2均等于4至8，y表示0至2，R1表示羟基; 取代或未取代的直链，支链或环状烷基; 取代或未取代的芳基或卤素原子，R3表示氢原子，取代或未取代的直链，支链或环状烷基或取代或未取代的芳基，R2表示通式（2）表示的任何结构， 该说明书中，至少一个R2具有酸解离位点，R5表示羟基，-O-R2-O- *或-O-R2-O-R55，R6表示羟基或-O-R2- O- *。
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4.发明公开公开(公告)号：US20230324801A1
公开(公告)日：2023-10-12
申请号：US18021160
申请日：2021-08-03
摘要： An object of the present invention is to provide a resist underlayer film forming composition for lithography that has features of having excellent smoothing performance on an uneven substrate, good embedding performance into a fine hole pattern, and a smoothed wafer surface after film formation, and the like. The object can be achieved by an underlayer film forming composition for lithography containing a compound having a protecting group.
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公开(公告)号：US20210206901A1
公开(公告)日：2021-07-08
申请号：US17270828
申请日：2019-08-21
IPC分类号： C08G8/04 , C07C39/367 , C07C69/712 , C07C69/96 , C07C43/205 , G03F7/038 , G03F7/039 , C07C69/653 , C07C271/48 , C07C43/29 , C07C43/295 , C07D303/18
摘要： A composition containing a polyphenol compound (B), wherein the polyphenol compound (B) is one or more selected from the group consisting of a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2):
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公开(公告)号：US20210018841A1
公开(公告)日：2021-01-21
申请号：US17044226
申请日：2019-04-26
摘要： A composition for resist underlayer film formation, containing a compound represented by the following formula (1). [LxTe(OR1)y] (1) (In the above formula (1), L is a ligand other than OR1; R1 is any of a hydrogen atom, a substituted or unsubstituted, linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the total of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R1 may be the same or different.)
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公开(公告)号：US20200172470A1
公开(公告)日：2020-06-04
申请号：US16634530
申请日：2018-07-27
IPC分类号： C07C215/80 , C07C211/50 , C07C217/84 , C07C211/58 , C07C255/58 , C07D233/64 , C08G73/02
摘要： A (poly)amine compound represented by the following formula (0):wherein RX is a 2nA-valent group having 1 to 70 carbon atoms or a single bond; each R1A is independently any of an alkyl group having 1 to 30 carbon atoms and optionally having a substituent, an aryl group having 6 to 30 carbon atoms and optionally having a substituent, a crosslinking group having 2 to 30 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group having 0 to 30 carbon atoms and optionally having a substituent, a carboxyl group, a thiol group and a hydroxy group, wherein when R1A is any of the alkyl group, the aryl group, the crosslinking group and the alkoxy group, R1A optionally contains at least one bond selected from the group consisting of an ether bond, a ketone bond and an ester bond, and at least one R1A is an amino group having 0 to 30 carbon atoms and optionally having a substituent; X is an oxygen atom or a sulfur atom, or X is optionally absent; each R independently represents any of a benzene ring, a biphenyl ring, a naphthalene ring, an anthracene ring and a pyrene ring; each m is independently an integer of 0 to 9, wherein at least one m is an integer of 1 to 9; and nA is an integer of 1 to 4.
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公开(公告)号：US20180284607A1
公开(公告)日：2018-10-04
申请号：US15562389
申请日：2016-03-02
发明人： Masatoshi ECHIGO , Takumi TOIDA , Takashi SATO
摘要： The present invention provides a radiation-sensitive composition containing (A) a resist base material, (B) an optically active diazonaphthoquinone compound, and (C) a solvent, wherein the content of a solid component in the composition is within the range of 1 to 80% by mass, the content of the solvent is within the range of 20 to 99% by mass, and the resist base material (A) is a compound represented by a specific formula.
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公开(公告)号：US20180246407A1
公开(公告)日：2018-08-30
申请号：US15757268
申请日：2016-09-02
发明人： Masatoshi ECHIGO
CPC分类号： G03F7/0217 , C07B61/00 , C07C43/23 , C07D303/28 , C08L63/00 , C08L2203/16 , C08L2312/04 , G03F7/094 , H01L21/0332 , H01L21/31116 , H01L21/31138
摘要： A compound represented by the following formula (1) and a method for producing the same, and a composition, a composition for optical component formation, a film forming composition for lithography, a resist composition, a method for forming a resist pattern, a radiation-sensitive composition, a method for producing an amorphous film, an underlayer film forming material for lithography, a composition for underlayer film formation for lithography, a method for producing an underlayer film for lithography, a resist pattern formation method, a circuit pattern formation method, and a purification method. wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms, an aryl group of 6 to 30 carbon atoms, an alkenyl group of 2 to 30 carbon atoms, a group represented by the following formula (A), a group represented by the following formula (B), a thiol group, or a hydroxy group, wherein at least one selected from the group consisting of R2 to R5 is a group selected from the group consisting of a group represented by the following formula (A) and a group represented by the following formula (B); m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2: wherein each R6 is independently an alkylene group of 1 to 4 carbon atoms; and m′ is an integer of 1 or larger, and wherein R6 is as defined above; R7 is a hydrogen atom or a methyl group; and m″ is 0 or an integer of 1 or larger.
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公开(公告)号：US20180210341A1
公开(公告)日：2018-07-26
申请号：US15746703
申请日：2016-07-21
发明人： Masatoshi ECHIGO
摘要： A (meth)acryloyl compound represented by the following formula (A): wherein X is a 2m-valent group having 1 to 60 carbon atoms or a single bond; each Z is independently an oxygen atom, a sulfur atom, or not a crosslink; each R1 is independently a linear, branched, or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 30 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with a vinylphenylmethyl group, wherein the alkyl group, the aryl group, the alkenyl group, or the alkoxy group optionally contains an ether bond, a ketone bond, or an ester bond; each R1A is independently a methyl group or a hydrogen atom; each k is independently an integer of 0 to 2, provided that all of the k moieties are not 0 at the same time; m is an integer of 1 to 3; each n is independently an integer of 0 to 5; and each p is independently 0 or 1.
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