METHOD OF PRODUCING SUBSTRATE WITH FINE UNEVEN PATTERN, RESIN COMPOSITION, AND LAMINATE

    公开(公告)号:US20200166835A1

    公开(公告)日:2020-05-28

    申请号:US16619696

    申请日:2018-06-05

    摘要: A method of producing a substrate with a fine uneven pattern is a method of producing a substrate having a fine uneven pattern on a surface thereof, the method including a step (a) of preparing a laminate provided with a substrate and a first resin layer provided on the substrate and having a first fine uneven pattern formed on a surface thereof; and a step (b) of forming a second fine uneven pattern corresponding to the first fine uneven pattern on the surface of the substrate by etching the surface of the first fine uneven pattern using the first resin layer as a mask, in which the first resin layer is formed of a resin composition (P) including a fluorine-containing cyclic olefin polymer (A) or a cured product of the resin composition (P).

    METHOD OF MANUFACTURING SUBSTRATE LAYERED BODY AND LAYERED BODY

    公开(公告)号:US20210391292A1

    公开(公告)日:2021-12-16

    申请号:US17284833

    申请日:2019-10-17

    IPC分类号: H01L23/00

    摘要: A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

    SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20200377772A1

    公开(公告)日:2020-12-03

    申请号:US16606789

    申请日:2018-04-19

    摘要: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

    METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND INTERMEDIATE FOR SEMICONDUCTOR DEVICE

    公开(公告)号:US20200168476A1

    公开(公告)日:2020-05-28

    申请号:US16611653

    申请日:2018-05-10

    IPC分类号: H01L21/56 H01L23/29

    摘要: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

    SUBSTRATE LAMINATED BODY AND METHOD OF MANUFACTURING SUBSTRATE LAMINATED BODY

    公开(公告)号:US20200048515A1

    公开(公告)日:2020-02-13

    申请号:US16607898

    申请日:2018-04-24

    摘要: A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(═O)OX groups in a molecule, in which from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.