公开(公告)号：US20030029492A1

公开(公告)日：2003-02-13

申请号：US09928581

申请日：2001-08-13

Applicant: Motorola, Inc.

Inventor： Jun Wang ,  Daniel S. Marshall

IPC: H01L035/00 ,  H01L037/00 ,  H01L035/14

CPC classification number: H01L35/34 ,  H01L35/22

Abstract: A thermoelectric material comprising a Group IV element boride doped with one of the Group III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. A method of fabricating a thermoelectric material including the steps of: providing a Group IV element boride, and doping the Group IV element boride with a doping element chosen from one of the column III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. An alternate method of fabricating a thermoelectric material is also disclosed including the steps of simultaneously growing on a substrate a Group IV element boride and at least one doping element chosen from one of the Group III, IV, or V elements wherein the doping element is different than the Group IV element in the Group IV element boride and the doping element is not boron.

Abstract translation: 掺杂有III族，IV族或V族元素之一的IV族元素硼化物的热电材料，其中掺杂元素不同于IV族元素硼化物中的IV族元素，掺杂元素不是硼。 一种制造热电材料的方法，包括以下步骤：提供IV族元素硼化物，并用选自第III，IV或V族元素之一的掺杂元素掺杂IV族元素硼化物，其中掺杂元素是不同的 来自IV族元素硼化物中的IV族元素，并且掺杂元素不是硼。 还公开了制造热电材料的替代方法，其包括以下步骤：在衬底上同时生长第IV族元素硼化物和选自III族，IV族或V族元素之一的至少一种掺杂元素，其中掺杂元素不同 比IV族元素硼化物中的IV族元素和掺杂元素不是硼。

公开(公告)号：US20030089921A1

公开(公告)日：2003-05-15

申请号：US09986899

申请日：2001-11-13

Applicant: MOTOROLA, INC

Inventor： Dirk C. Jordan ,  Daniel S. Marshall

IPC: H01L031/0328

CPC classification number: H01L31/1852 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L31/0324 ,  H01L31/1836 ,  Y02E10/544 ,  Y02P70/521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer comprising a layer of monocrystalline oxide having a niobium concentration that provides for substantial lattice matching of the accommodating buffer layer to the overlying monocrystalline material layer. The monocrystalline oxide of the accommodating buffer layer is selected to be lattice matched to the underlying monocrystalline substrate. The accommodating buffer layer may be spaced apart from the underlying monocrystalline substrate by an amorphous interface layer. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 柔性衬底包括容纳缓冲层，其包含具有铌浓度的单晶氧化物层，其提供容纳缓冲层与上覆单晶材料层的实质晶格匹配。 选择容纳缓冲层的单晶氧化物与下面的单晶衬底晶格匹配。 容纳缓冲层可以通过非晶界面层与下面的单晶衬底间隔开。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。

公开(公告)号：US20030006470A1

公开(公告)日：2003-01-09

申请号：US09897968

申请日：2001-07-05

Applicant: MOTOROLA, INC.

Inventor： Steven James Franson ,  Daniel S. Marshall ,  Paige M. Holm ,  John E. Holmes ,  Bruce Allen Bosco ,  Rudy M. Emrick

IPC: H01L031/058

CPC classification number: H01L31/101 ,  H01L21/8258 ,  H01L23/38 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L27/16 ,  H01L31/1852 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183 ,  Y02E10/544 ,  H01L2924/00

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A thermo-electric device is integrated into the semiconductor structure.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 半导体结构中集成有热电装置。

公开(公告)号：US20030031908A1

公开(公告)日：2003-02-13

申请号：US09925948

申请日：2001-08-09

Applicant: Motorola, Inc.

Inventor： Joseph W. Bostaph ,  Daniel S. Marshall

IPC: H01M008/04 ,  H01M008/22 ,  H01M008/02

CPC classification number: H01M8/1009 ,  H01M8/04097 ,  H01M8/04156 ,  H01M2300/0082 ,  Y02E60/523 ,  Y10T29/49108

Abstract: A fuel cell device and method of forming the fuel cell device including a base portion having a major surface. At least one fuel cell membrane electrode assembly is formed on the major surface of the base portion. A water recovery and recirculation system is defined in a cap portion and in communication with a water recovery and recirculation channel defined in the base portion. The water recovery and recirculating system is formed to collect reaction water from the cathode side of the at least one fuel cell membrane electrode assembly for recirculation to the anode side of the fuel cell membrane electrode assembly. An exhaust separation chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for the exhausting of generated gases.

Abstract translation: 一种形成燃料电池装置的燃料电池装置及其方法，所述燃料电池装置包括具有主表面的基部。 至少一个燃料电池膜电极组件形成在基部的主表面上。 水回收和再循环系统限定在盖部分中并且与在基部中限定的水回收和再循环通道连通。 水回收再循环系统形成为从至少一个燃料电池膜电极组件的阴极侧收集反应水，用于再循环到燃料电池膜电极组件的阳极侧。 排气分离室限定在基座部分中，并与燃料电池膜电极组件连通以排出产生的气体。