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    Resistance switching device and process for producing thereof
    1.
    发明授权
    Resistance switching device and process for producing thereof 有权
    电阻切换装置及其制造方法

    公开(公告)号：US09496492B2

    公开(公告)日：2016-11-15

    申请号：US14458808

    申请日：2014-08-13

    申请人： MURATA MANUFACTURING CO., LTD. ,  National Institute for Materials Science

    发明人： Sakyo Hirose ,  Naoki Ohashi ,  Hideki Yoshikawa

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L29/47 ,  H01L29/872 ,  H01L29/861 ,  H01L29/24

    CPC分类号： H01L45/08 ,  H01L29/24 ,  H01L29/47 ,  H01L29/8615 ,  H01L29/872 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1625

    摘要： A resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

    摘要翻译： 具有高电阻变化率，优异的响应特性，优异的电阻记忆特性（保持特性）和优异的重复电阻的电阻切换装置。 电阻切换装置包括n型氧化物半导体和第一和第二电极，其被设置为将n型氧化物半导体的至少一部分插入其间，其中通过施加电阻变化/记忆特性提供电阻变化/记忆特性的肖特基结 在n型氧化物半导体和第一电极之间的界面处形成第一和第二电极之间具有不同极性的电压; 并且第一电极被定位成使其与n型氧化物半导体接触，并且具有由Au氧化物或Pt氧化物或含有厚度为1-50nm的氧的Au或Pt形成的下层。

    RESISTANCE SWITCHING DEVICE AND PROCESS FOR PRODUCING THEREOF
    2.
    发明申请
    RESISTANCE SWITCHING DEVICE AND PROCESS FOR PRODUCING THEREOF 有权
    电阻开关装置及其制造方法

    公开(公告)号：US20150028282A1

    公开(公告)日：2015-01-29

    申请号：US14458808

    申请日：2014-08-13

    申请人： MURATA MANUFACTURING CO., LTD. ,  National Institute for Materials Science

    发明人： Sakyo Hirose ,  Naoki Ohashi ,  Hideki Yoshikawa

    IPC分类号： H01L45/00

    CPC分类号： H01L45/08 ,  H01L29/24 ,  H01L29/47 ,  H01L29/8615 ,  H01L29/872 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1625

    摘要： resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

    摘要翻译： 具有高电阻变化率，优异的响应特性，优异的电阻记忆特性（保持特性）和优异的重复电阻的电阻切换装置。 电阻切换装置包括n型氧化物半导体和第一和第二电极，其被设置为将n型氧化物半导体的至少一部分插入其间，其中通过施加电阻变化/记忆特性提供电阻变化/记忆特性的肖特基结 在n型氧化物半导体和第一电极之间的界面处形成第一和第二电极之间具有不同极性的电压; 并且第一电极被定位成使其与n型氧化物半导体接触，并且具有由Au氧化物或Pt氧化物或含有厚度为1-50nm的氧的Au或Pt形成的下层。