公开(公告)号：US20140160852A1

公开(公告)日：2014-06-12

申请号：US13710517

申请日：2012-12-11

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Feng-Ming Lee ,  Yu-Yu Lin ,  Ming-Hsiu Lee

IPC: G11C16/04 ,  H01L29/423 ,  H01L29/788

CPC classification number: G11C16/0408 ,  H01L21/28273 ,  H01L29/788

Abstract: A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.

Abstract translation: 提供了一种半导体器件及其制造方法及其操作方法。 半导体器件包括衬底，掺杂区域和堆叠结构。 掺杂区域在衬底中。 堆叠结构在衬底上。 堆叠结构包括电介质层，电极层，固体电解质层和离子供给层。

公开(公告)号：US09036397B2

公开(公告)日：2015-05-19

申请号：US13624761

申请日：2012-09-21

Applicant: MACRONIX International Co., Ltd.

Inventor： Wei-Chih Chien ,  Ming-Hsiu Lee ,  Feng-Ming Lee

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C13/004 ,  G11C11/5614 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/71 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146

Abstract: A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance. A resistive memory array including an array of the above resistive memory units, word lines and bit lines is also described, wherein the word (bit) lines are coupled to the first (second) memory layers.

Abstract translation: 提供了一种用于控制电阻性存储器的操作的电阻性存储器和方法。 电阻性存储器具有第一存储器层，第二存储器层和介质层。 第一存储器层和第二存储器层中的每一个用于存储数据。 介质层形成在第一存储层和第二存储层之间。 该方法至少包括测量第一存储层和第二存储层之间的电阻的步骤，以及根据测得的电阻确定第一状态，第二状态和第三状态中的哪一种是电阻性存储器的状态 。 还描述了包括上述电阻性存储器单元，字线和位线的阵列的电阻式存储器阵列，其中字（位）线耦合到第一（第二）存储器层。

公开(公告)号：US09019769B2

公开(公告)日：2015-04-28

申请号：US13710517

申请日：2012-12-11

Applicant: Macronix International Co., Ltd.

Inventor： Feng-Ming Lee ,  Yu-Yu Lin ,  Ming-Hsiu Lee

IPC: G11C16/04 ,  H01L29/788 ,  H01L21/28

CPC classification number: G11C16/0408 ,  H01L21/28273 ,  H01L29/788

Abstract: A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.

Abstract translation: 提供了一种半导体器件及其制造方法及其操作方法。 半导体器件包括衬底，掺杂区域和堆叠结构。 掺杂区域在衬底中。 堆叠结构在衬底上。 堆叠结构包括电介质层，电极层，固体电解质层和离子供给层。