摘要:
A method of forming one or more TSP compacts is provided. The method includes placing one or more TSP material layers in an enclosure and surrounding each TSP material layer with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates. The method also includes exposing the enclosure to a high temperature high pressure process wherein the at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bond to the TSP material layers forming a stack of TSP material layers including the TSP material layers one over the other with tungsten carbide bonded to each of the TSP material layers and encapsulating each of the TSP material layers.
摘要:
A method of forming one or more TSP compacts is provided. The method includes placing one or more TSP material layers in an enclosure and surrounding each TSP material layer with at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates. The method also includes exposing the enclosure to a high temperature high pressure process wherein the at least one of a pre-sintered tungsten carbide powder, pre-cemented tungsten carbide powder, tungsten carbide powder, or partially sintered tungsten carbide substrates bond to the TSP material layers forming a stack of TSP material layers including the TSP material layers one over the other with tungsten carbide bonded to each of the TSP material layers and encapsulating each of the TSP material layers.
摘要:
A method for making a polycrystalline diamond construction is disclosed, which includes the steps of treating a polycrystalline diamond body having a plurality of bonded together diamond crystals and a solvent catalyst material to remove the solvent catalyst material therefrom, wherein the solvent catalyst material is disposed within interstitial regions between the bonded together diamond crystals, replacing the removed solvent catalyst material with a replacement material, and treating the body having the replacement material to remove substantially all of the replacement material from a first region of the body extending a depth from a body surface, and allowing the remaining amount of the replacement material to reside in a second region of the body that is remote from the surface.
摘要:
A method of re-processing used TSP material layers to form cutting elements, bits with such cutting elements mounted on their bodies, and bits having re-processed TSP material layers attached to their bodies, as well as such cutting elements and bits are provided. The method includes providing a used TSP material cutting element having a TSP material layer and substrate, or a bit having a TSP material layer attached to the bit, removing the used TSP material layer from the cutting element or bit, cutting the used TSP material layer to a new shape, if necessary, optionally re-leaching the used TSP layer and re-using the TSP material layer to form a cutting element, or in forming a bit body. The formed cutting element may be mounted on a bit body.
摘要:
A drill bit having a bit body having at least one blade thereon, at least one cutter pocket disposed on the at least one blade, at least one cutter disposed in the at least one cutter pocket, hardfacing applied to at least a selected portion of the drill bit is shown and described. The hardfacing includes a first hardfacing layer disposed on the selected portion of the drill bit, a second hardfacing layer disposed on the first hardfacing layer, wherein the first hardfacing layer has a hardness different than a hardness of the second hardfacing layer.
摘要:
A cutting element for a drill bit that includes an outer support element having at least a bottom portion and a side portion; and an inner rotatable cutting element. A portion of the inner rotatable cutting element is disposed in the outer support element, where the inner rotatable cutting element includes a substrate and a diamond cutting face having a thickness of at least 0.050 inches disposed on an upper surface of the substrate; and where a distance from an upper surface of the diamond cutting face to a bearing surface between the inner rotatable cutting element and the outer support element ranges from 0 to about 0.300 inches.
摘要:
Polycrystalline diamond constructions include a diamond body comprising a matrix phase of bonded together diamond crystals formed at high pressure/high temperature conditions with a catalyst material. The sintered body is treated remove the catalyst material disposed within interstitial regions, rendering it substantially free of the catalyst material used to initially sinter the body. Accelerating techniques can be used to remove the catalyst material. The body includes an infiltrant material disposed within interstitial regions in a first region of the construction. The body includes a second region adjacent the working surface and that is substantially free of the infiltrant material. The infiltrant material can be a Group VIII material not used to initially sinter the diamond body. A metallic substrate is attached to the diamond body, and can be the same or different from a substrate used as a source of the catalyst material used to initially sinter the diamond body.
摘要:
The present invention provides a cutting element having a cylindrical body having a canted end face on which is formed an ultra hard material layer and a method of forming the same. One or a plurality of transition layers may be provided between the ultra hard material layer and the cutting element body.
摘要:
A polycrystalline diamond cutter having a coating of refractory material applied to the polycrystalline diamond surface increases the operational life of the cutter. The coating typically has a thickness in the range of from 0.1 to 30 .mu.m and may be made from titanium nitride, titanium carbide, titanium carbonitride, titanium aluminum carbonitride, titanium aluminum nitride, boron carbide, zirconium carbide, chromium carbide, chromium nitride, or any of the transition metals or Group IV metals combined with either silicon, aluminum, boron, carbon, nitrogen or oxygen. The coating can be applied using conventional plating or other physical or chemical deposition techniques.