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公开(公告)号：US06656369B2
公开(公告)日：2003-12-02
申请号：US10053314
申请日：2002-01-17
IPC分类号： B44C122
CPC分类号： G01Q70/16
摘要： A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.
摘要翻译： 扫描探针显微镜探针通过将探针材料沉积在具有正在制造的扫描探针显微镜探针的所需形状和尺寸的空腔的模具中而形成。 在优选实施例中，通过在模具主体中光刻地限定所需扫描探针显微镜探针的形状和尺寸并蚀刻模具主体以形成空腔而形成空腔。 在将探针材料沉积在模具中的空腔中之前，空腔内衬有释放层，其在探针已经形成之后激活，允许去除探针。
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公开(公告)号：US6004706A
公开(公告)日：1999-12-21
申请号：US311815
申请日：1999-05-13
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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公开(公告)号：US08340800B2
公开(公告)日：2012-12-25
申请号：US12175018
申请日：2008-07-17
申请人： William Cote , Michael P. Guse , Mark E. Lagus , James Rice , Yunsheng Song
发明人： William Cote , Michael P. Guse , Mark E. Lagus , James Rice , Yunsheng Song
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , Y02P90/14
摘要： Monitoring a process sector in a production facility includes establishing a tool defect index associated with a process sector in the production facility. The tool defect index includes a signal representing a defect factor associated with a tool in the process sector. Monitoring the process also requires determining whether the defect factor is a known defect factor or an unknown defect factor, and analyzing a unit from the tool if the defect factor is an unknown defect factor. Monitoring the process further requires identifying at least one defect on the unit from the tool, establishing that the at least one defect is a significant defect, determining cause of the significant defect, and creating an alert indicating that the tool associated with the process sector is producing units having significant defects.
摘要翻译： 监控生产设备中的过程部门包括建立与生产设备中的过程部门相关联的工具缺陷指数。 工具缺陷指数包括表示与处理扇区中的工具相关联的缺陷因子的信号。 监测过程还需要确定缺陷因子是否是已知缺陷因子或未知缺陷因子，以及如果缺陷因子是未知缺陷因子，则从工具分析单位。 监视过程还需要从工具识别单元上的至少一个缺陷，确定至少一个缺陷是重大缺陷，确定重大缺陷的原因，以及创建指示与处理扇区相关联的工具的警报 生产单位有重大缺陷。
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公开(公告)号：US20100017010A1
公开(公告)日：2010-01-21
申请号：US12175018
申请日：2008-07-17
申请人： William Cote , Michael Guse , Mark E. Lagus , James Rice , Yunsheng Song
发明人： William Cote , Michael Guse , Mark E. Lagus , James Rice , Yunsheng Song
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , Y02P90/14
摘要： Monitoring a process sector in a production facility includes establishing a tool defect index associated with a process sector in the production facility. The tool defect index includes a signal representing a defect factor associated with a tool in the process sector. Monitoring the process also requires determining whether the defect factor is a known defect factor or an unknown defect factor, and analyzing a unit from the tool if the defect factor is an unknown defect factor. Monitoring the process further requires identifying at least one defect on the unit from the tool, establishing that the at least one defect is a significant defect, determining cause of the significant defect, and creating an alert indicating that the tool associated with the process sector is producing units having significant defects.
摘要翻译： 监控生产设备中的过程部门包括建立与生产设备中的过程部门相关联的工具缺陷指数。 工具缺陷指数包括表示与处理扇区中的工具相关联的缺陷因子的信号。 监测过程还需要确定缺陷因子是否是已知缺陷因子或未知缺陷因子，以及如果缺陷因子是未知缺陷因子，则从工具分析单位。 监视过程还需要从工具识别单元上的至少一个缺陷，确定至少一个缺陷是重大缺陷，确定重大缺陷的原因，以及创建指示与处理扇区相关联的工具的警报 生产单位有重大缺陷。
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5.发明授权Method and apparatus for critical dimension and tool resolution determination using edge width 失效使用边缘宽度确定关键尺寸和刀具分辨率的方法和装置
公开(公告)号：US5969273A
公开(公告)日：1999-10-19
申请号：US23059
申请日：1998-02-12
申请人： Charles N. Archie , Mark E. Lagus , Diana Nyyssonen, deceased , by Jeffrey Swing, legal representative , Eric P. Solecky , Donald C. Wheeler
发明人： Charles N. Archie , Mark E. Lagus , Diana Nyyssonen, deceased , by Jeffrey Swing, legal representative , Eric P. Solecky , Donald C. Wheeler
摘要： A method for monitoring a process in which a feature is formed on a substrate. A plurality of dimensions of the feature are measured using a tool. An edge width of the feature is calculated based on the plurality of dimensions. The edge width is used to determine whether the process is operating within a desired specification. The calculated edge width is compared to a baseline edge width measurement to determine a difference between them. The process is determined to be operating within the specification if the difference is less than a threshold value. If the difference is greater than or equal to the threshold value, the method determines whether the difference is caused by a change in resolution of the tool. A plurality of diagnostic measurements of the edge width may be performed. The tool is adjusted to have a respectively different focus for each respective one of the plurality of diagnostic measurements. The method includes determining that the difference between the calculated edge width and the baseline edge width is caused by a change in resolution of the tool if any one of the plurality of diagnostic measurements of the edge width differs from the baseline edge width by less than the threshold value. The method also includes determining that the process is not operating within the specification, if the difference is greater than or equal to the threshold value, and the difference is not caused by a change in resolution of the tool.
摘要翻译： 一种用于监测在基板上形成特征的工艺的方法。 使用工具测量特征的多个尺寸。 基于多个维度来计算特征的边缘宽度。 边缘宽度用于确定过程是否在所需规格内运行。 将计算的边缘宽度与基线边缘宽度测量进行比较，以确定它们之间的差异。 如果差小于阈值，则确定该过程在规范内操作。 如果差值大于或等于阈值，则该方法确定该差异是否由工具的分辨率的变化引起。 可以执行边缘宽度的多个诊断测量。 调整该工具以针对多个诊断测量中的每个相应的一个分别具有不同的焦点。 该方法包括确定所计算的边缘宽度与基线边缘宽度之间的差异是由工具的分辨率的变化引起的，如果边缘宽度的多个诊断测量中的任何一个与基线边缘宽度不同，小于 阈值。 该方法还包括如果差值大于或等于阈值，则确定该过程不在规范内操作，并且该差异不是由工具的分辨率改变引起的。
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6.发明授权Focus or exposure dose parameter control system using tone reversing patterns 失效聚焦或曝光剂量参数控制系统使用色调反转模式
公开(公告)号：US5965309A
公开(公告)日：1999-10-12
申请号：US921986
申请日：1997-08-28
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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