公开(公告)号：US06656369B2

公开(公告)日：2003-12-02

申请号：US10053314

申请日：2002-01-17

申请人： Mahadevaiyer Krishnan ,  Mark E. Lagus ,  Kevin S. Petrarca ,  James G. Ryan ,  Richard P. Volant

发明人： Mahadevaiyer Krishnan ,  Mark E. Lagus ,  Kevin S. Petrarca ,  James G. Ryan ,  Richard P. Volant

IPC分类号： B44C122

CPC分类号： G01Q70/16

摘要： A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.

摘要翻译： 扫描探针显微镜探针通过将探针材料沉积在具有正在制造的扫描探针显微镜探针的所需形状和尺寸的空腔的模具中而形成。 在优选实施例中，通过在模具主体中光刻地限定所需扫描探针显微镜探针的形状和尺寸并蚀刻模具主体以形成空腔而形成空腔。 在将探针材料沉积在模具中的空腔中之前，空腔内衬有释放层，其在探针已经形成之后激活，允许去除探针。

公开(公告)号：US06825075B2

公开(公告)日：2004-11-30

申请号：US10757214

申请日：2004-01-14

申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC分类号： H01L218242

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

摘要翻译： 描述了一种在衬底中形成的特征中制造封装金属结构的方法。 特征的侧壁和底部被阻挡层覆盖，并且该特征被金属填充，优选地通过电镀。 在金属中形成凹部，并且沉积附加的阻挡层，覆盖金属的顶表面并与第一阻挡层接触。 优选通过化学机械抛光将附加阻挡层平坦化。 该方法可用于制造MIM电容器，其中封装的金属结构用作电容器的下板。 第二衬底层沉积在衬底的顶表面上，具有覆盖封装的金属结构的开口。 介电层沉积在开口中，覆盖其底部的封装金属结构。 作为电容器的上板的附加层被沉积以覆盖电介质层并填充开口。 介电层和附加层优选通过CMP平坦化。

公开(公告)号：US06756624B2

公开(公告)日：2004-06-29

申请号：US10409010

申请日：2003-04-07

申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC分类号： H01L27108

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

摘要翻译： 描述了一种在衬底中形成的特征中制造封装金属结构的方法。 特征的侧壁和底部被阻挡层覆盖，并且该特征被金属填充，优选地通过电镀。 在金属中形成凹部，并且沉积附加的阻挡层，覆盖金属的顶表面并与第一阻挡层接触。 优选通过化学机械抛光将附加阻挡层平坦化。 该方法可用于制造MIM电容器，其中封装的金属结构用作电容器的下板。 第二衬底层沉积在衬底的顶表面上，具有覆盖封装的金属结构的开口。 介电层沉积在开口中，覆盖其底部的封装金属结构。 作为电容器的上板的附加层被沉积以覆盖电介质层并填充开口。 介电层和附加层优选通过CMP平坦化。

公开(公告)号：US06597068B2

公开(公告)日：2003-07-22

申请号：US10034862

申请日：2001-12-28

申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC分类号： H01L2348

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

公开(公告)号：US06368953B1

公开(公告)日：2002-04-09

申请号：US09567466

申请日：2000-05-09

申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC分类号： H01L214763

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

摘要翻译： 描述了一种在衬底中形成的特征中制造封装金属结构的方法。 特征的侧壁和底部被阻挡层覆盖，并且该特征被金属填充，优选地通过电镀。 在金属中形成凹部，并且沉积附加的阻挡层，覆盖金属的顶表面并与第一阻挡层接触。 优选通过化学机械抛光将附加阻挡层平坦化。 该方法可用于制造MIM电容器，其中封装的金属结构用作电容器的下板。 第二衬底层沉积在衬底的顶表面上，具有覆盖封装的金属结构的开口。 介电层沉积在开口中，覆盖其底部的封装金属结构。 作为电容器的上板的附加层被沉积以覆盖电介质层并填充开口。 介电层和附加层优选通过CMP平坦化。

公开(公告)号：US20120040277A1

公开(公告)日：2012-02-16

申请号：US13278571

申请日：2011-10-21

申请人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

发明人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

IPC分类号： G03F1/00 ,  B24B41/06

CPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/50

摘要： A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.

摘要翻译： 用于能够容纳标线的抛光工具的掩模版载体包括具有正面和反面的基板，固定在基板的正面的保持环，形成由刚性基板的正面限定的凹部和内部 固定环的边缘。 掩模垫在凹槽中支撑掩模版。 基板和标线垫具有一组匹配的对准的通孔，用于从底板和标线板之间的空间排出空气，并将空气供给到该空间，因此真空可以将该掩模版保持在适当的位置上 在真空条件下的掩模版载体和在压力下施加空气可以从掩模版载体喷出掩模版。

公开(公告)号：US20080286660A1

公开(公告)日：2008-11-20

申请号：US11749384

申请日：2007-05-16

申请人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

发明人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

IPC分类号： G03F1/00 ,  C09K3/14

CPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/50

摘要： A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

摘要翻译： 光学投影掩模版的制造方法采用镶嵌工艺。 第一特征凹槽被蚀刻到透射或透明的突出掩模掩模板中。 然后，特征凹部用包括用于吸收光化辐射的部分透射材料和/或辐射吸收体的辐射透射率改性材料研磨。 牺牲材料可以在填充凹部之前临时添加到凹部中，以提供与填充凹部的材料并置的间隙。 此后，去除牺牲材料。 然后将投影掩模平坦化，留下填充有透射率改性材料的特征凹部，以及任何期望的间隙。 投影面罩被平坦化，同时保持在用抛光工具和浆料抛光过程中将其固定在位置的夹具中。

公开(公告)号：US20080156636A1

公开(公告)日：2008-07-03

申请号：US11971488

申请日：2008-01-09

申请人： Kevin S. Petrarca ,  Mahadevaiyer Krishnan ,  Michael Lofaro ,  Kenneth P. Rodbell

发明人： Kevin S. Petrarca ,  Mahadevaiyer Krishnan ,  Michael Lofaro ,  Kenneth P. Rodbell

IPC分类号： C23C14/16

CPC分类号： H01L21/76873 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

摘要： Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer. The impure copper seed layer covers a barrier layer, which covers an insulating layer that has an opening. Electroplated copper fills the opening in the insulating layer. Through a chemical mechanical polish, the barrier layer, the impure an impure copper seed layer derived from an electroplated copper bath copper seed layer, and the electroplated copper are planarized to the insulating layer.

摘要翻译： 通过包括不纯铜种子层的互连可以减轻线半导体器件后端的铜互连边缘的缺陷。 不纯铜种子层覆盖阻挡层，其覆盖具有开口的绝缘层。 电镀铜填充绝缘层中的开口。 通过化学机械抛光，阻挡层，不纯的由电镀铜浴铜籽晶层衍生的铜籽晶层和电镀铜平坦化到绝缘层。

公开(公告)号：US08439728B2

公开(公告)日：2013-05-14

申请号：US13278571

申请日：2011-10-21

申请人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

发明人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

IPC分类号： B24B41/06

CPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/50

摘要： A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.

摘要翻译： 用于能够容纳标线的抛光工具的掩模版载体包括具有正面和反面的基板，固定在基板的正面的保持环，形成由刚性基板的正面限定的凹部和内部 固定环的边缘。 掩模垫在凹槽中支撑掩模版。 基板和标线垫具有一组匹配的对准的通孔，用于从底板和标线板之间的空间排出空气，并将空气供给到该空间，因此真空可以将该掩模版保持在适当的位置上 在真空条件下的掩模版载体和在压力下施加空气可以从掩模版载体喷出掩模版。

公开(公告)号：US07202764B2

公开(公告)日：2007-04-10

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。