公开(公告)号：US20100017010A1

公开(公告)日：2010-01-21

申请号：US12175018

申请日：2008-07-17

申请人： William Cote ,  Michael Guse ,  Mark E. Lagus ,  James Rice ,  Yunsheng Song

发明人： William Cote ,  Michael Guse ,  Mark E. Lagus ,  James Rice ,  Yunsheng Song

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  Y02P90/14

摘要： Monitoring a process sector in a production facility includes establishing a tool defect index associated with a process sector in the production facility. The tool defect index includes a signal representing a defect factor associated with a tool in the process sector. Monitoring the process also requires determining whether the defect factor is a known defect factor or an unknown defect factor, and analyzing a unit from the tool if the defect factor is an unknown defect factor. Monitoring the process further requires identifying at least one defect on the unit from the tool, establishing that the at least one defect is a significant defect, determining cause of the significant defect, and creating an alert indicating that the tool associated with the process sector is producing units having significant defects.

摘要翻译： 监控生产设备中的过程部门包括建立与生产设备中的过程部门相关联的工具缺陷指数。 工具缺陷指数包括表示与处理扇区中的工具相关联的缺陷因子的信号。 监测过程还需要确定缺陷因子是否是已知缺陷因子或未知缺陷因子，以及如果缺陷因子是未知缺陷因子，则从工具分析单位。 监视过程还需要从工具识别单元上的至少一个缺陷，确定至少一个缺陷是重大缺陷，确定重大缺陷的原因，以及创建指示与处理扇区相关联的工具的警报 生产单位有重大缺陷。

公开(公告)号：US08340800B2

公开(公告)日：2012-12-25

申请号：US12175018

申请日：2008-07-17

申请人： William Cote ,  Michael P. Guse ,  Mark E. Lagus ,  James Rice ,  Yunsheng Song

发明人： William Cote ,  Michael P. Guse ,  Mark E. Lagus ,  James Rice ,  Yunsheng Song

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  Y02P90/14

摘要： Monitoring a process sector in a production facility includes establishing a tool defect index associated with a process sector in the production facility. The tool defect index includes a signal representing a defect factor associated with a tool in the process sector. Monitoring the process also requires determining whether the defect factor is a known defect factor or an unknown defect factor, and analyzing a unit from the tool if the defect factor is an unknown defect factor. Monitoring the process further requires identifying at least one defect on the unit from the tool, establishing that the at least one defect is a significant defect, determining cause of the significant defect, and creating an alert indicating that the tool associated with the process sector is producing units having significant defects.

摘要翻译： 监控生产设备中的过程部门包括建立与生产设备中的过程部门相关联的工具缺陷指数。 工具缺陷指数包括表示与处理扇区中的工具相关联的缺陷因子的信号。 监测过程还需要确定缺陷因子是否是已知缺陷因子或未知缺陷因子，以及如果缺陷因子是未知缺陷因子，则从工具分析单位。 监视过程还需要从工具识别单元上的至少一个缺陷，确定至少一个缺陷是重大缺陷，确定重大缺陷的原因，以及创建指示与处理扇区相关联的工具的警报 生产单位有重大缺陷。

公开(公告)号：US07803708B2

公开(公告)日：2010-09-28

申请号：US11537378

申请日：2006-09-29

申请人： Xiaomeng Chen ,  William Cote ,  Anthony K Stamper ,  Arthur C Winslow

发明人： Xiaomeng Chen ,  William Cote ,  Anthony K Stamper ,  Arthur C Winslow

IPC分类号： H01L21/302

CPC分类号： H01L21/76831 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

摘要： Method for reducing resist poisoning. The method includes the steps of forming a first structure in a dielectric on a substrate, reducing amine related contaminants from the dielectric and the substrate prior to a formation of a second structure on the substrate such that the amine related contaminates will not diffuse out from either the substrate or the dielectric, wherein the reducing utilizes a plasma treatment which one of chemically ties up the amine related contaminates and binds, traps, or consumes the amine related contaminates during subsequent processing steps, forming the second structure on the substrate, and after the forming of the first structure, preventing poisoning of a resist layer in subsequent processing by the reducing.

摘要翻译： 降低抗药性中毒的方法 该方法包括以下步骤：在衬底上的电介质中形成第一结构，在衬底上形成第二结构之前，从电介质和衬底中还原胺相关的污染物，使得胺相关的污染物不会从任一种 基底或电介质，其中所述还原利用等离子体处理，其中所述等离子体处理中的一种化学结合所述胺相关的污染并在随后的处理步骤期间结合，捕集或消耗胺相关污染物，在所述基底上形成所述第二结构， 形成第一结构，防止在随后的还原过程中中和抗蚀剂层。

公开(公告)号：US20220116515A1

公开(公告)日：2022-04-14

申请号：US17493530

申请日：2021-10-04

申请人： Chen Chen ,  William Cote ,  Paul Ream

发明人： Chen Chen ,  William Cote ,  Paul Ream

IPC分类号： H04N5/225 ,  F27D21/02 ,  G03B11/04

摘要： A probe assembly for a process vessel for viewing the inside of the vessel, the probe assembly includes an elongated bracket, an elongated frame, an ICPC unit, and a camera unit. The elongated bracket has a front face and a rear face, the elongated bracket having an upper portion and a lower portion, the lower portion has a first aperture. The elongated frame has a proximal end and a distal end, the distal end of the elongated frame is coupled to the upper portion of the front face of the bracket. The ICPC unit includes a housing that has a front wall, a rear wall, and side wall extended between the front wall and the rear wall, the front wall has a second aperture, the rear wall has a third aperture. The ICPC unit further includes an actuator enclosed in the housing and an elongated tube operably coupled to the actuator, the tube extends through the second aperture and the first aperture away from the rear face of the bracket, the actuator configured to reciprocate the tube between an extended position and a retracted position. The camera unit includes a camera enclosure housing a camera, wherein the actuation member is configured to reciprocate the camera unit between the engage mode and stand-by mode, in the engage mode, the lens' hood is within the tube of the ICPC unit, and in the stand-by mode, the camera unit is away from the ICPC unit towards the proximal end of the elongated frame.

公开(公告)号：US08293634B2

公开(公告)日：2012-10-23

申请号：US12187646

申请日：2008-08-07

申请人： Felix P. Anderson ,  William Cote ,  Daniel C. Edelstein ,  Thomas L. McDevitt ,  Anthony K. Stamper

发明人： Felix P. Anderson ,  William Cote ,  Daniel C. Edelstein ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2221/1036 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/45147 ,  H01L2224/48847 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01006

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion thereof devoid of a fluorine boundary layer. The structure further includes a copper wire in the trench having at least a bottom portion thereof in contact with the non-fluoride boundary layer of the trench. A lead free solder bump is in electrical contact with the copper wire.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该结构包括在至少一部分没有氟边界层的电介质层中形成的沟槽。 该结构还包括在沟槽中的铜线，其至少其底部与沟槽的非氟化物边界层接触。 无铅焊料凸块与铜线电接触。

公开(公告)号：US20050165602A1

公开(公告)日：2005-07-28

申请号：US11007626

申请日：2004-12-07

申请人： William Cote ,  Amy Uhrbach ,  Jill Carrier ,  Wensheng Han

发明人： William Cote ,  Amy Uhrbach ,  Jill Carrier ,  Wensheng Han

IPC分类号： G06F17/27

CPC分类号： G10L15/183

摘要： A system and method for a speech recognition technology that allows language models for a particular language to be customized through the addition of alternate pronunciations that are specific to the accent of the dictator, for a subset of the words in the language model. The system includes the steps of identifying the pronunciation differences that are best handled by modifying the pronunciations of the language model, identifying target words in the language model for pronunciation modification, and creating a accented speech file used to modify the language model.

摘要翻译： 用于语音识别技术的系统和方法，其允许通过添加特定于独裁者的口音的替代发音来为特定语言的语言模型，对于语言模型中的单词的子集来定制语言模型。 该系统包括以下步骤：通过修改语言模型的发音，识别用于发音修改的语言模型中的目标词，以及创建用于修改语言模型的重音语音文件来识别最佳处理的发音差异。

公开(公告)号：US20070221990A1

公开(公告)日：2007-09-27

申请号：US11308408

申请日：2006-03-22

申请人： William Cote ,  Oliver Patterson

发明人： William Cote ,  Oliver Patterson

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/76264 ,  H01L21/84 ,  H01L27/1203

摘要： Structures and a method are disclosed for grounding gate-stack and/or silicon active region front-end-of-line structures on a silicon-on-insulator (SOI) substrate, which may be used as test structures for VC inspection. In one embodiment, a structure includes a grounded bulk silicon substrate having the SOI substrate thereover, the SOI substrate including a silicon-on-insulator (SOI) layer and a buried oxide (BOX) layer; the silicon active region having at least one finger element within the SOI layer, the at least one finger element isolated by a shallow trench isolation (STI) layer; and a polysilicon ground intersecting the at least one finger element and extending through the STI layer and the BOX layer to the grounded bulk silicon substrate, the polysilicon ground contacting the silicon active region and the grounded bulk silicon substrate.

摘要翻译： 公开了用于在绝缘体上硅（SOI）衬底上接地栅叠层和/或硅有源区前线结构的结构和方法，其可用作VC检验的测试结构。 在一个实施例中，结构包括其上具有SOI衬底的接地体硅衬底，SOI衬底包括绝缘体上硅（SOI）层和掩埋氧化物（BOX）层; 所述硅有源区在所述SOI层内具有至少一个指状元件，所述至少一个指状元件由浅沟槽隔离（STI）层隔离; 以及与所述至少一个指状元件相交并且穿过所述STI层和所述BOX层延伸到所述接地体硅衬底的多晶硅地，所述多晶硅接地与所述硅有源区和所述接地体硅衬底接触。

公开(公告)号：US20070204447A1

公开(公告)日：2007-09-06

申请号：US11707060

申请日：2007-02-16

申请人： Kerry Bernstein ,  John Bracchitta ,  William Cote ,  Tak Ning ,  Wilbur Pricer

发明人： Kerry Bernstein ,  John Bracchitta ,  William Cote ,  Tak Ning ,  Wilbur Pricer

IPC分类号： H01G7/00

CPC分类号： H01G4/1272 ,  H01G4/35 ,  H01L22/14 ,  H01L22/22 ,  H01L23/5223 ,  H01L23/642 ,  H01L27/0805 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/435 ,  H01L2924/00

摘要： A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit.

摘要翻译： 为半导体器件提供去耦电容器，并且可以包括在单个互连平面中在第一低介电绝缘体的表面上形成至少两个交叉指示图案的第一低介电绝缘体层和低电阻导体。 可以在两个图案之间提供高介电常数材料。 还提供了用于测试多个这些电容器的电路，其包括充电监视电路，耦合电路和控制电路。

公开(公告)号：US08288281B2

公开(公告)日：2012-10-16

申请号：US12838147

申请日：2010-07-16

申请人： Xiaomeng Chen ,  William Cote ,  Anthony K. Stamper ,  Arthur C. Winslow

发明人： Xiaomeng Chen ,  William Cote ,  Anthony K. Stamper ,  Arthur C. Winslow

IPC分类号： H01L21/302

CPC分类号： H01L21/76831 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

摘要： Method for reducing resist poisoning. The method includes the steps of forming a first structure in a dielectric on a substrate, reducing amine related contaminants from the dielectric and the substrate prior to a formation of a second structure on the substrate such that the amine related contaminates will not diffuse out from either the substrate or the dielectric, wherein the reducing utilizes a plasma treatment which one of chemically ties up the amine related contaminates and binds, traps, or consumes the amine related contaminates during subsequent processing steps, forming the second structure on the substrate, and after the forming of the first structure, preventing poisoning of a resist layer in subsequent processing by the reducing.

摘要翻译： 降低抗药性中毒的方法 该方法包括以下步骤：在衬底上的电介质中形成第一结构，在衬底上形成第二结构之前，从电介质和衬底中还原胺相关的污染物，使得胺相关的污染物不会从任一 基底或电介质，其中所述还原利用等离子体处理，其中所述等离子体处理中的一种化学结合所述胺相关的污染并在随后的处理步骤期间结合，捕集或消耗胺相关污染物，在所述基底上形成所述第二结构， 形成第一结构，防止在随后的还原过程中中和抗蚀剂层。

公开(公告)号：US20100279508A1

公开(公告)日：2010-11-04

申请号：US12838147

申请日：2010-07-16

申请人： Xiaomeng Chen ,  William Cote ,  Anthony K. Stamper ,  Arthur C. Winslow

发明人： Xiaomeng Chen ,  William Cote ,  Anthony K. Stamper ,  Arthur C. Winslow

IPC分类号： H01L21/311

CPC分类号： H01L21/76831 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

摘要： Method for reducing resist poisoning. The method includes the steps of forming a first structure in a dielectric on a substrate, reducing amine related contaminants from the dielectric and the substrate prior to a formation of a second structure on the substrate such that the amine related contaminates will not diffuse out from either the substrate or the dielectric, wherein the reducing utilizes a plasma treatment which one of chemically ties up the amine related contaminates and binds, traps, or consumes the amine related contaminates during subsequent processing steps, forming the second structure on the substrate, and after the forming of the first structure, preventing poisoning of a resist layer in subsequent processing by the reducing.

摘要翻译： 降低抗药性中毒的方法 该方法包括以下步骤：在衬底上的电介质中形成第一结构，在衬底上形成第二结构之前，从电介质和衬底中还原胺相关的污染物，使得胺相关的污染物不会从任一种 基底或电介质，其中所述还原利用等离子体处理，其中所述等离子体处理中的一种化学结合所述胺相关的污染并在随后的处理步骤期间结合，捕集或消耗胺相关污染物，在所述基底上形成所述第二结构， 形成第一结构，防止在随后的还原过程中中和抗蚀剂层。