摘要:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要:
A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a pressure chamber, adding gaseous reactant and/or solid metal source, applying sufficient microwave energy (or current in hot filament reactor) to activate the metal of interest (such as gold, copper, tungsten, and bismuth) and continuing the process until nanowires of the desired length are formed. The substrate may be fused silica quartz, the catalytic metal a gallium or indium metal, the gaseous reactant is nitrogen and/or hydrogen and the nanowires are tungsten nitride and/or tungsten.
摘要:
A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.
摘要:
A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.
摘要:
The application discloses a rare-earth permanent magnetic powder, a bonded magnet, and a device using the bonded magnet. The rare-earth permanent magnetic powder comprises 4 to 12 at. % of Nd, 0.1 to 2 at. % of C, 10 to 25 at. % of N and 62.2 to 85.9 at. % of T, wherein T is Fe or FeCo and the main phase of the rare-earth permanent magnetic powder is a hard magnetic phase with a TbCu7 structure. Material volatilization can be avoided effectively during a preparation process of the rare earth permanent magnetic powder, thus improving the wettability with a water-cooling roller during the preparation process and final prepared materials are provided with good magnetic properties.
摘要:
The present invention relates to a method of precipitation of metal ions. Mineral(s), oxide(s), hydroxide(s) of magnesium and/or calcium are adopted as raw materials, and the raw material(s) is processed through at least one step of calcination, slaking, or carbonization to produce aqueous solution(s) of magnesium bicarbonate and/or calcium bicarbonate, and then the solution(s) is used as precipitant(s) to deposit rare earth, such as nickel, cobalt, iron, aluminum, gallium, indium, manganese, cadmium, zirconium, hafnium, strontium, barium, copper and zinc ions. And at least one of metal carbonates, hydroxides or basic carbonates is obtained, or furthermore the obtained products are calcined to produce metal oxides. The invention takes the cheap calcium and/or magnesium minerals or their oxides, hydroxides with low purity as raw materials to instead common precipitants such as ammonium bicarbonate and sodium carbonate etc. The calcium, magnesium, carbon dioxide etc are efficiently and circularly used, and the environment pollution by ammonium-nitrogen wastewater, high concentration salts wastewater is avoided, and both of the discharge of greenhouse gas carbon dioxide and the production cost of metal are decreased.
摘要:
A method for intercepting graphics device interface invocations by using filter driver which is transparent to graphics device interface engine and real display driver is disclosed. The method comprises steps of duplicating DDI function table returned from said real display driver, modifying DDI functions of said real display driver required for capturing screen update, creating auxiliary buffer area as updating buffer area for said screen update, and further processing said updating buffer area. With the method of the present invention, the support to video and 3D acceleration in the local computer can be realized by means of software, and the user can be provided with high-quality picture and display effect. Compared with the Mirror system in the prior art, since the present invention doesn't employ the Mirror system, the graphics device interface engine of the inventive system are not aware of the existence of the filter driver, the video and 3D acceleration function of the graphic card still remains. As a result, the function can be supported in the system, and applications employing video and 3D acceleration can be executed normally.
摘要:
A docking device for restoring location arrangement of output devices is provided according to an aspect of the present invention. The docking device includes a transmission module configured to obtain output information from an information generation module and transmit it to an output device and an identifier storage module configured to store an identifier corresponding to the output device. An output system and method for restoring a location arrangement of output devices are also provided.