公开(公告)号：US09013047B2

公开(公告)日：2015-04-21

申请号：US14056148

申请日：2013-10-17

申请人： Makoto Imai ,  Toru Tanaka

发明人： Makoto Imai ,  Toru Tanaka

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49589 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L23/642 ,  H01L24/33 ,  H01L25/16 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor element, a capacitor, a first resin, lead frames and a second resin. The first resin forms a resin molding which covers the semiconductor element and the capacitor. The lead frames are attached to two surfaces of the resin molding and are connected to the semiconductor element and the capacitor. The second resin directly covers the capacitor and has a rigidity lower than a rigidity of the first resin. An outside of the second resin is directly covered with the first resin.

摘要翻译： 半导体器件包括半导体元件，电容器，第一树脂，引线框架和第二树脂。 第一树脂形成覆盖半导体元件和电容器的树脂成形体。 引线框架连接到树脂模制件的两个表面并连接到半导体元件和电容器。 第二树脂直接覆盖电容器，刚性低于第一树脂的刚性。 第二树脂的外部被第一树脂直接覆盖。

公开(公告)号：US20140131845A1

公开(公告)日：2014-05-15

申请号：US14056148

申请日：2013-10-17

申请人： Makoto IMAI ,  Toru Tanaka

发明人： Makoto IMAI ,  Toru Tanaka

IPC分类号： H01L23/495

CPC分类号： H01L23/49589 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L23/642 ,  H01L24/33 ,  H01L25/16 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor element, a capacitor, a first resin, lead frames and a second resin. The first resin forms a resin molding which covers the semiconductor element and the capacitor. The lead frames are attached to two surfaces of the resin molding and are connected to the semiconductor element and the capacitor. The second resin directly covers the capacitor and has a rigidity lower than a rigidity of the first resin. An outside of the second resin is directly covered with the first resin.

摘要翻译： 半导体器件包括半导体元件，电容器，第一树脂，引线框架和第二树脂。 第一树脂形成覆盖半导体元件和电容器的树脂成形体。 引线框架连接到树脂模制件的两个表面并连接到半导体元件和电容器。 第二树脂直接覆盖电容器，刚性低于第一树脂的刚性。 第二树脂的外部被第一树脂直接覆盖。

公开(公告)号：US09318764B2

公开(公告)日：2016-04-19

申请号：US14007241

申请日：2012-04-13

申请人： Toru Tanaka ,  Katsutoshi Suzuki ,  Haruhiko Komoriya ,  Arata Takahashi ,  Saori Itabashi

发明人： Toru Tanaka ,  Katsutoshi Suzuki ,  Haruhiko Komoriya ,  Arata Takahashi ,  Saori Itabashi

IPC分类号： H01M8/10 ,  H01B1/12 ,  C08J5/22

CPC分类号： H01M8/1039 ,  C08J5/2225 ,  H01B1/122 ,  H01M8/1011 ,  H01M8/1023 ,  H01M8/1037 ,  H01M8/1053 ,  Y02E60/523 ,  Y10T156/10

摘要： Disclosed is a proton conducting polymer membrane formed by laminating a plurality of solid electrolyte membranes. This proton conducting polymer membrane is one prepared by laminating at least one layer of a solid electrolyte membrane formed by using a resin having a bis(perfluoroalkanesulfonyl)methide group in the chemical structure. This solid electrolyte membrane has a superior proton conductivity without transmitting the fuel (methanol or hydrogen).

摘要翻译： 公开了通过层叠多个固体电解质膜形成的质子传导性聚合物膜。 该质子传导性聚合物膜是通过层叠通过在化学结构中使用具有双（全氟烷基磺酰基）甲硅烷基的树脂形成的至少一层固体电解质膜而制备的。 该固体电解质膜在不传输燃料（甲醇或氢）的情况下具有优异的质子传导性。

公开(公告)号：US09223501B2

公开(公告)日：2015-12-29

申请号：US13511102

申请日：2012-04-23

申请人： Atsumi Terayama ,  Akihisa Nagami ,  Toru Tanaka ,  Yasunori Kaneda ,  Yoshinori Okami

发明人： Atsumi Terayama ,  Akihisa Nagami ,  Toru Tanaka ,  Yasunori Kaneda ,  Yoshinori Okami

IPC分类号： G06F3/06 ,  G06F17/30 ,  G06F12/08 ,  G06F9/455

CPC分类号： G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/065 ,  G06F3/0662 ,  G06F3/067 ,  G06F9/45533

摘要： When migrating a virtual server between a plurality of physical servers, a pre-migration connection relationship between the virtual server and a storage area used by the virtual server is maintained after the migration of the virtual server by using a cooperative mechanism between a plurality of storage apparatuses even if the storage area used by the virtual server is migrated between the plurality of storage apparatuses. A computer system and virtual server migration control method for the computer system is described.

摘要翻译： 当在多个物理服务器之间迁移虚拟服务器时，在虚拟服务器通过使用多个存储器之间的协作机制迁移之后维护虚拟服务器与虚拟服务器使用的存储区域之间的预迁移连接关系 即使虚拟服务器使用的存储区域在多个存储装置之间迁移也是如此。 描述了用于计算机系统的计算机系统和虚拟服务器迁移控制方法。

公开(公告)号：US09153525B2

公开(公告)日：2015-10-06

申请号：US14073059

申请日：2013-11-06

申请人： Toru Tanaka

发明人： Toru Tanaka

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49513 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/06181 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/0002 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.

摘要翻译： 半导体器件包括：半导体元件，其包括在半导体元件的表面上的电极层; 设置在电极层的表面上的低强度层; 设置在低强度层的表面上的接合层; 以及设置在所述接合层的表面上的导电板。 接合层的强度高于电极层的强度，低强度层的强度低于电极层的强度。

公开(公告)号：US20130219138A1

公开(公告)日：2013-08-22

申请号：US13496036

申请日：2012-02-16

申请人： Hiroshi Nasu ,  Toru Tanaka

发明人： Hiroshi Nasu ,  Toru Tanaka

IPC分类号： G06F12/16

CPC分类号： G06F3/0608 ,  G06F3/061 ,  G06F3/0646 ,  G06F3/0662 ,  G06F3/067 ,  G06F11/1451 ,  G06F2201/84

摘要： A snapshot volume is migrated by using a primary volume of a migration destination storage apparatus.The management server comprises a controller for generational management, by means of the snapshot volumes, of differential data for the logical volume which is the parent volume of the snapshot volume, and, if an instruction to copy a snapshot volume of a designated generation is received and a snapshot volume prior to the designated generation of the copy instruction-target snapshot volume exists, the controller copies the differential data between the designated-generation snapshot volume and the existing snapshot volume, and associates the copied differential data with the existing snapshot volume.

摘要翻译： 使用迁移目的地存储设备的主卷迁移快照卷。 管理服务器包括用于通过快照卷对作为快照卷的父卷的逻辑卷的差异数据进行代数管理的控制器，以及如果接收到复制指定代的快照卷的指令 并且存在指定生成复制指令目标快照卷之前的快照卷，控制器将复制指定代快照卷与现有快照卷之间的差异数据，并将复制的差异数据与现有快照卷相关联。

公开(公告)号：US08287645B2

公开(公告)日：2012-10-16

申请号：US13013270

申请日：2011-01-25

申请人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

发明人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

IPC分类号： C30B25/14

CPC分类号： C23C16/24 ,  B01J4/002 ,  B01J19/2415 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/185 ,  C01B33/03 ,  Y10T117/10

摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。

公开(公告)号：US08032490B2

公开(公告)日：2011-10-04

申请号：US12078615

申请日：2008-04-02

申请人： Toru Tanaka ,  Yuichi Taguchi ,  Hiroshi Nasu ,  Masayuki Yamamoto

发明人： Toru Tanaka ,  Yuichi Taguchi ,  Hiroshi Nasu ,  Masayuki Yamamoto

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F11/3476

摘要： A storage system capable of identifying all volumes to be audited is provided.Operation logs 3005 concerning the operations of volumes are associated with a time and stored in storage apparatuses 1400 and 1500, and a management computer 1100 collects information about these operation logs 3005, restores the status history of the operation logs 3005, sets, as an audit range, the operation logs 3005 including volumes with an audit period and audit target data stored therein, extracts the operation logs 3005 belonging to the audit range from the restored status history of the operation logs 3005, and transmits the extracted operation logs 3005 to a computer (requesting computer) 1000. As a result, all the audit target volumes can be identified.

摘要翻译： 提供了一种能够识别要审核的所有卷的存储系统。 关于卷的操作的操作日志3005与时间相关联并存储在存储设备1400和1500中，并且管理计算机1100收集关于这些操作日志3005的信息，恢复操作日志3005的状态历史，设置为审计 范围内，包含审核期间的卷和审核对象数据的操作日志3005从恢复的操作日志3005的状态历史中提取属于审核范围的操作日志3005，并将提取的操作日志3005发送到计算机 （请求计算机）1000.因此，可以识别所有审核目标卷。

公开(公告)号：US07922814B2

公开(公告)日：2011-04-12

申请号：US11556524

申请日：2006-11-03

申请人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

发明人： Shuichi Honda ,  Minoru Yasueda ,  Satoshi Hayashida ,  Masatsugu Yamaguchi ,  Toru Tanaka

IPC分类号： C30B21/02

CPC分类号： C23C16/24 ,  B01J4/002 ,  B01J19/2415 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/185 ,  C01B33/03 ,  Y10T117/10

摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。

公开(公告)号：US07791995B2

公开(公告)日：2010-09-07

申请号：US11668984

申请日：2007-01-30

申请人： Tsuyoshi Yamamoto ,  Katsuhiko Masuda ,  Shigefumi Morishima ,  Toru Tanaka

发明人： Tsuyoshi Yamamoto ,  Katsuhiko Masuda ,  Shigefumi Morishima ,  Toru Tanaka

IPC分类号： G11B7/00

CPC分类号： G11B7/0037

摘要： An image information detecting apparatus is disclosed that comprises: a semiconductor laser that emits a laser light beam; a light receiving unit that receives a reflected light beam of the laser light beam applied to a color changing layer of an optical disc, the color changing layer being formed from a photo-sensitive material of a heat-sensitive material, and that outputs an electrical signal corresponding to the level of the reflected light beam; and a detecting unit that detects image information based on the electric signal, wherein the image information detecting apparatus detects the image information indicating an image from the color changing layer after the image has been formed therein.

摘要翻译： 公开了一种图像信息检测装置，包括：发射激光的半导体激光器; 光接收单元，其接收施加到光盘的变色层的激光束的反射光束，所述变色层由感光材料的感光材料形成，并且输出电 信号对应于反射光束的电平; 以及检测单元，其基于所述电信号检测图像信息，其中所述图像信息检测装置在形成所述图像之后检测指示来自所述变色层的图像的图像信息。