公开(公告)号：US5177649A

公开(公告)日：1993-01-05

申请号：US594956

申请日：1990-10-10

申请人： Makoto Iwakami ,  Shinichi Yamashita

发明人： Makoto Iwakami ,  Shinichi Yamashita

IPC分类号： H04N5/7826 ,  G11B5/588 ,  G11B15/467

CPC分类号： G11B15/4677

摘要： An information signal recording apparatus, which includes a pilot signal generator for generating a tracking control pilot signal having a predetermined frequency, a generator for generating an information signal to be recorded, and a recorder for recording the pilot signal on a first area of a recording track, and for recording the information signal on a second area of the recording track. A component of the predetermined frequency of the pilot signal is made to be smaller in a leading portion and in an ending portion of the first area than in other portions of the first area.

摘要翻译： 一种信息信号记录装置，包括用于产生具有预定频率的跟踪控制导频信号的导频信号发生器，用于产生要记录的信息信号的发生器和用于将导频信号记录在记录的第一区域上的记录器 轨道，并用于在记录轨道的第二区域上记录信息信号。 导频信号的预定频率的分量在第一区域的前导部分和结束部分中比在第一区域的其他部分小。

公开(公告)号：US06551908B2

公开(公告)日：2003-04-22

申请号：US09964332

申请日：2001-09-28

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B100

CPC分类号： C30B29/06 ,  C30B19/062

摘要： A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种制造半导体薄膜的方法，其中通过将多个基板浸入坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液含有半导体作为溶质，同时将其移动到 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06951584B2

公开(公告)日：2005-10-04

申请号：US10364517

申请日：2003-02-12

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  C30B31/04

CPC分类号： C30B29/06 ,  C30B19/062

摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06953506B2

公开(公告)日：2005-10-11

申请号：US09978633

申请日：2001-10-18

申请人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  H01L21/00 ,  H01L21/673 ,  H01L21/8242

CPC分类号： H01L21/67086 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6732 ,  H01L21/67326 ,  H01L21/67346 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/911 ,  Y10S414/135 ,  Y10T117/10 ,  Y10T117/1024

摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

摘要翻译： 晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。 通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于 它的凹陷和盖子在其开口的边缘。 还公开了利用晶片盒的液相生长系统和液相生长工艺。

公开(公告)号：US06682990B1

公开(公告)日：2004-01-27

申请号：US09656014

申请日：2000-09-07

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L2130

CPC分类号： H01L31/1804 ,  H01L21/67207 ,  H01L21/6835 ,  H01L21/76259 ,  H01L31/0504 ,  H01L31/1892 ,  H01L2221/68368 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/96 ,  Y10S438/977

摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.

摘要翻译： 根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或 通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。