摘要:
A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.
摘要:
A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.
摘要:
A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.
摘要:
A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.
摘要:
A reverse flow prevention apparatus is provided so as to drastically decrease pressure loss without installing an independent pressure regulator mechanism therein. With the reverse flow prevention apparatus, a flow path running along a straight line is provided in an outer box, and is partitioned by a diaphragm into an upstream region, and the downstream of a midstream region. An inner cylindrical body is provided at the center of the diaphragm, integrally therewith, so as to fit slidably into the upstream region of the outer box, an escape valve is provided on the downstream side of the inner cylindrical body in such a way as to be able to freely open and close a valve port provided between the midstream region and the downstream region while the escape valve is energized towards valve opening by the urging of an escape valve spring, and first and second check valves are provided inside the inner cylindrical body and the downstream region of the outer box, respectively. An effective diameter of the diaphragm and a diameter of a valve seat of the escape valve are set substantially at an equal value while a spring load of a first check valve spring and that of the escape valve spring are set such that a pressure of the midstream region is maintained always lower by a predetermined value than a pressure on the upstream side.
摘要:
The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.
摘要:
According to a process for production of alkylene oxide polymers offered by the present invention, an alkylene oxide is subjected to a polymerization reaction under presence of a catalyst in a solvent containing an aliphatic hydrocarbon having from five to seven carbon atoms and a branched structure. The aliphatic hydrocarbon is provided preferably by 2-methyl pentane, 3-methyl pentane, 2,3-dimethyl pentane, 2,4-dimethyl pentane, etc. The alkylene oxide is provided preferably by ethylene oxides and/or propylene oxides.
摘要:
The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.
摘要:
A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.
摘要:
A low on-resistance silicon carbide semiconductor device is provided that includes an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide.The silicon carbide semiconductor device includes: at least an insulating film 7, formed on an upper surface of silicon carbide; and at least an ohmic electrode 12, formed of an alloy comprising nickel and titanium, or a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide.