Cleaning device
    1.
    发明授权
    Cleaning device 有权
    清洁装置

    公开(公告)号:US08793831B2

    公开(公告)日:2014-08-05

    申请号:US13578761

    申请日:2011-02-10

    IPC分类号: A47L13/16 A47L13/20 A47L13/44

    摘要: A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.

    摘要翻译: 基体(15)的下表面包括波浪状波纹状表面部分(19),其在垂直于预定方向的横截面上沿清洁装置本体(11)进行清洁,该平面 视图波形为具有交替且连续布置的脊部(17)和谷部(18)。 波状波纹状表面部分(19)的谷部(18)包括倾斜的谷部(18a),其端部朝向基体(15)的与预定方向相对的侧部开口以延伸 倾斜地抵靠预定方向,以便根据擦拭表面的擦拭将诸如灰尘的物体倾斜地引导到待清洁片(13)上。

    CLEANING DEVICE
    2.
    发明申请
    CLEANING DEVICE 有权
    清洁装置

    公开(公告)号:US20130000064A1

    公开(公告)日:2013-01-03

    申请号:US13578761

    申请日:2011-02-10

    IPC分类号: A47L13/16 A47L13/44

    摘要: A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.

    摘要翻译: 基体(15)的下表面包括波浪状波纹状表面部分(19),其在垂直于预定方向的横截面上沿清洁装置本体(11)进行清洁,该平面 视图波形为具有交替且连续布置的脊部(17)和谷部(18)。 波状波纹状表面部分(19)的谷部(18)包括倾斜的谷部(18a),其端部朝向基体(15)的与预定方向相对的侧部开口以延伸 倾斜地抵靠预定方向,以便根据擦拭表面的擦拭将诸如灰尘的物体倾斜地引导到待清洁片(13)上。

    Power tool
    3.
    发明申请
    Power tool 失效
    电动工具

    公开(公告)号:US20080257577A1

    公开(公告)日:2008-10-23

    申请号:US11892976

    申请日:2007-08-29

    摘要: A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.

    摘要翻译: 电动工具包括用于执行螺钉紧固操作的驱动单元; 用于可旋转地驱动所述驱动单元的马达; 可充电电池组; 用于打开和关闭电机的触发开关; 以及容纳在电动工具的主体中的用于监视螺钉紧固操作的控制电路。 控制电路具有用于检测螺钉紧固操作完成的螺钉紧固完成检测单元,用于计数检测到的紧固操作次数的螺丝拧紧计数单元,用于预定要拧紧的螺钉数量的螺钉拧紧数设定单元, 当检测到的紧固操作的数量达到预设数量时,螺钉紧固完成通知单元用于通知螺钉紧固操作的完成。 此外,螺钉拧紧数设定单元和螺钉紧固完成通知单元设置在把手部分的下前部。

    Silicon carbide semiconductor device and method for producing the same
    4.
    发明授权
    Silicon carbide semiconductor device and method for producing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号:US07935628B2

    公开(公告)日:2011-05-03

    申请号:US12310024

    申请日:2007-08-01

    IPC分类号: H01L21/28

    摘要: A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.

    摘要翻译: 提供一种低导通电阻碳化硅半导体器件,以包括在碳化硅的下表面上形成的具有低接触电阻和高粘合强度的欧姆电极。 具体地说,碳化硅半导体器件至少包括形成在碳化硅衬底的上表面上的绝缘膜,并且至少包括由包含镍和钛的合金形成的欧姆电极,或者由包含镍和 钛,并且其形成在碳化硅衬底的下表面上。

    Reverse flow prevention apparatus
    5.
    发明授权
    Reverse flow prevention apparatus 有权
    逆流防止装置

    公开(公告)号:US06178998B2

    公开(公告)日:2001-01-30

    申请号:US09521270

    申请日:2000-03-08

    IPC分类号: F16K1506

    摘要: A reverse flow prevention apparatus is provided so as to drastically decrease pressure loss without installing an independent pressure regulator mechanism therein. With the reverse flow prevention apparatus, a flow path running along a straight line is provided in an outer box, and is partitioned by a diaphragm into an upstream region, and the downstream of a midstream region. An inner cylindrical body is provided at the center of the diaphragm, integrally therewith, so as to fit slidably into the upstream region of the outer box, an escape valve is provided on the downstream side of the inner cylindrical body in such a way as to be able to freely open and close a valve port provided between the midstream region and the downstream region while the escape valve is energized towards valve opening by the urging of an escape valve spring, and first and second check valves are provided inside the inner cylindrical body and the downstream region of the outer box, respectively. An effective diameter of the diaphragm and a diameter of a valve seat of the escape valve are set substantially at an equal value while a spring load of a first check valve spring and that of the escape valve spring are set such that a pressure of the midstream region is maintained always lower by a predetermined value than a pressure on the upstream side.

    摘要翻译: 提供逆流防止装置,以便在不在其内安装独立的压力调节机构的情况下显着降低压力损失。 通过逆流防止装置,在外箱中设置沿着直线延伸的流路,并且由隔膜分隔成上游区域和中游区域的下游。 内圆柱体设置在隔膜的中心与其一体形成,以便可滑动地配合到外箱的上游区域中,在内筒体的下游侧设置有排气阀, 能够自由地打开和关闭设置在中游区域和下游区域之间的阀口,同时通过排出阀弹簧的推动而使排出阀向阀开启而被驱动,并且第一和第二止回阀设置在内筒体内 和外箱的下游区域。 隔膜的有效直径和排泄阀的阀座的直径基本上设定在相等的值,同时第一止回阀弹簧的弹簧载荷和排出阀弹簧的弹簧载荷被设定为使得中流的压力 区域总是保持低于上游侧的压力的预定值。

    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    制造硅碳化硅半导体器件的方法和碳化硅半导体器件

    公开(公告)号:US20090072244A1

    公开(公告)日:2009-03-19

    申请号:US12281902

    申请日:2007-01-16

    IPC分类号: H01L29/24 H01L21/44

    摘要: The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.

    摘要翻译: 本发明的目的是提供一种用于制造半导体器件的方法,该半导体器件为了形成这种欧姆接触的目的而进行了退火处理,以能够降低欧姆接触电阻并且提供在碳化硅的(000-1)面上, 绝缘膜并提供半导体器件。 制造碳化硅半导体器件的方法包括以下步骤:在至少包含氧和水分的气体中在碳化硅半导体的(000-1)面上进行热氧化,从而以这种方式形成绝缘膜 为了接触碳化硅半导体的(000-1)面,除去绝缘膜的一部分,从而在其中形成开口部,在开口部的至少一部分上沉积接触金属,进行热处理,从而形成 接触金属和碳化硅的反应层,其中热处理在惰性气体和氢气的混合气体中实施。

    Process for production of alkyllene oxide polymers
    7.
    发明授权
    Process for production of alkyllene oxide polymers 有权
    烷基氧化烯聚合物的制备方法

    公开(公告)号:US06979722B2

    公开(公告)日:2005-12-27

    申请号:US10469736

    申请日:2002-03-05

    IPC分类号: C08G65/10 C08G65/26 C08G59/68

    摘要: According to a process for production of alkylene oxide polymers offered by the present invention, an alkylene oxide is subjected to a polymerization reaction under presence of a catalyst in a solvent containing an aliphatic hydrocarbon having from five to seven carbon atoms and a branched structure. The aliphatic hydrocarbon is provided preferably by 2-methyl pentane, 3-methyl pentane, 2,3-dimethyl pentane, 2,4-dimethyl pentane, etc. The alkylene oxide is provided preferably by ethylene oxides and/or propylene oxides.

    摘要翻译: 根据本发明提供的烯化氧聚合物的制造方法,在含有5〜7个碳原子的脂族烃和支链结构的溶剂中,在催化剂存在下使烯化氧进行聚合反应。 脂肪烃优选由2-甲基戊烷,3-甲基戊烷,2,3-二甲基戊烷,2,4-二甲基戊烷等提供。烯化氧优选由环氧乙烷和/或环氧丙烷提供。

    Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
    8.
    发明授权
    Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device 有权
    制造碳化硅半导体器件的方法和碳化硅半导体器件

    公开(公告)号:US07811874B2

    公开(公告)日:2010-10-12

    申请号:US12281902

    申请日:2007-01-16

    IPC分类号: H01L21/336

    摘要: The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.

    摘要翻译: 本发明的目的是提供一种用于制造半导体器件的方法,该半导体器件为了形成这种欧姆接触的目的而进行了退火处理,以能够降低欧姆接触电阻并且提供在碳化硅的(000-1)面上, 绝缘膜并提供半导体器件。 制造碳化硅半导体器件的方法包括以下步骤:在至少包含氧和水分的气体中在碳化硅半导体的(000-1)面上进行热氧化,从而以这种方式形成绝缘膜 为了接触碳化硅半导体的(000-1)面,除去绝缘膜的一部分,从而在其中形成开口部,在开口部的至少一部分上沉积接触金属,进行热处理,从而形成 接触金属和碳化硅的反应层,其中热处理在惰性气体和氢气的混合气体中实施。

    Power tool having control means for monitoring screw tightening operations
    9.
    发明授权
    Power tool having control means for monitoring screw tightening operations 失效
    电动工具具有用于监控螺丝紧固操作的控制装置

    公开(公告)号:US07673701B2

    公开(公告)日:2010-03-09

    申请号:US11892976

    申请日:2007-08-29

    IPC分类号: B23B45/00 B23B45/02

    摘要: A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.

    摘要翻译: 电动工具包括用于执行螺钉紧固操作的驱动单元; 用于可旋转地驱动所述驱动单元的马达; 可充电电池组; 用于打开和关闭电机的触发开关; 以及容纳在电动工具的主体中的用于监视螺钉紧固操作的控制电路。 控制电路具有用于检测螺钉紧固操作完成的螺钉紧固完成检测单元,用于计数检测到的紧固操作次数的螺丝拧紧计数单元,用于预定要拧紧的螺钉数量的螺钉拧紧数设定单元, 当检测到的紧固操作的数量达到预设数量时,螺钉紧固完成通知单元用于通知螺钉紧固操作的完成。 此外,螺钉拧紧数设定单元和螺钉紧固完成通知单元设置在把手部分的下前部。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    10.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号:US20090321746A1

    公开(公告)日:2009-12-31

    申请号:US12310024

    申请日:2007-08-01

    IPC分类号: H01L29/24 H01L21/28

    摘要: A low on-resistance silicon carbide semiconductor device is provided that includes an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide.The silicon carbide semiconductor device includes: at least an insulating film 7, formed on an upper surface of silicon carbide; and at least an ohmic electrode 12, formed of an alloy comprising nickel and titanium, or a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide.

    摘要翻译: 提供一种低导通电阻碳化硅半导体器件,其包括形成在碳化硅的下表面上的低接触电阻和高粘合强度的欧姆电极。 所述碳化硅半导体器件包括:至少形成在碳化硅的上表面上的绝缘膜7; 以及至少一个由包含镍和钛的合金形成的欧姆电极12或者包含镍和钛的硅化物,并且形成在碳化硅的下表面上。