摘要:
The material for metal cases of secondary batteries using a non-aqueous electrolyte includes a steel sheet; and a plated layer that has a Ni layer, and a Cu—Ni layer, which is disposed between the Ni layer and the steel sheet and is in contact with the Ni layer, and is in contact with the steel sheet.
摘要:
The present invention provides a galvanized steel sheet including: a steel sheet; and a galvanizing layer provided on a surface of the steel sheet; wherein the galvanizing layer includes an amorphous coating layer having an inorganic oxoacid salt and metallic oxide on a surface layer of the galvanizing layer; the galvanizing layer includes a ζ phase and a δ1 phase; the galvanizing layer includes, by mass, 8 to 13% of Fe; Zn in the metallic oxide exists up to an outermost surface layer of the amorphous layer; and an X-ray diffraction intensity ratio I, which is obtained by dividing an X-ray diffraction intensity of the ζ phase at d=0.126, after removing background intensity, by an X-ray diffraction intensity of the δ1 phase at d=0.126, after removing background intensity, is 0.06 to 0.35.
摘要:
The present invention provides a galvanized steel sheet including: a steel sheet; and a galvanizing layer provided on a surface of the steel sheet; wherein the galvanizing layer includes an amorphous coating layer having an inorganic oxoacid salt and metallic oxide on a surface layer of the galvanizing layer; the galvanizing layer includes a ζ phase and a δ1 phase; the galvanizing layer includes, by mass, 8 to 13% of Fe; Zn in the metallic oxide exists up to an outermost surface layer of the amorphous layer; and an X-ray diffraction intensity ratio I, which is obtained by dividing an X-ray diffraction intensity of the ζ phase at d=0.126, after removing background intensity, by an X-ray diffraction intensity of the δ1 phase at d=0.126, after removing background intensity, is 0.06 to 0.35.
摘要:
A TFT substrate (100) is provided with TFTs disposed on a substrate (2), first insulating layers (24, 26) disposed above the TFTs, a lower layer transparent electrode (12) disposed above the first insulating layers (24, 26), a second insulating layer (28) covering the lower layer transparent electrode (12), and pixel electrodes (10) disposed on the second insulating layer (28), in which an auxiliary capacitance (Cs) is formed by means of the lower layer transparent electrode (12), the second insulating layer (28), and the pixel electrode (10). The TFT and the pixel electrode (10) are electrically connected via a contact hole (34) penetrating the first insulating layers (24, 26) and the second insulating layer (28). A connecting transparent electrode (14) is disposed within the contact hole (34).
摘要:
The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.
摘要:
The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.
摘要:
7α-Hydroxy-pregn-4-en-3-one-20-carbaldehyde, a production method thereof and a method for producing 7α,21 -dihydroxy-20-methyl-pregn-4-en-3-one, which is useful as a synthetic intermediate for pharmaceuticals such as squalamine and the like, efficiently at high purity from the carbaldehyde.
摘要:
The present invention has an object of eliminating the holding pin trace of a composite-molding of the dichromatic molding by refilling with resin by the pushing pin and preventing the lateral-shift of the primary molding during the refilling. It is made possible to fill closed recess and cavity with resin through a communicating hole formed in the primary molding by the pushing pin. A primary cavity mold 11 and a secondary cavity mold 12 are juxtaposed at symmetrical positions of a fixed plate 1. Core molds 14 closing alternately with both thereof are juxtaposed on a rotary table 7 installed on a movable platen 4. Holding pins 15 of the primary molding 30 and a resin pushing pin 16 are installed in the core mold 14 in a way to appear and disappear in respect to a cavity. The primary molding 30 is held in contact with the surface of the secondary cavity mold by the holding pin 15. A pin hole 20 for refilling resin is formed to be opened on a surface of the core mold by retracting the pushing pin 16. A secondary cavity including the pin hole 20 is refilled with a different material resin by injection. The holding pin 15 is retracted and sunk in the surface of the cavity mold. The pushing pin 16 is moved forward to force the resin for refilling the pin hole 20 into the resin in the cavity. The regions not filled with resin due to the holding pin 15 are refilled up.
摘要:
An automobile fuel container material and container has good workability, corrosion resistance of internal and external surfaces and weldability. Excellent environmental adaptability arises from the material being free from the elution of harmful components such as lead and chromium(VI). The automobile fuel container material includes a steel sheet, 5 to 80 g/m2 zinc plating as a first layer on at least one side of the surface of the steel sheet, 10 g/m2 nickel plating as a second layer, and not more than 5 g/m2 of a post-treatment layer. The post-treatment layer forms by coating partially reduced chromic acid and a reducing organic compound or can be an electrolytic chromate film as a lower layer and a resin as an upper layer.
摘要翻译:汽车燃料容器材料和容器具有良好的可加工性,内外表面的耐腐蚀性和可焊性。 优良的环境适应性源于不含有害成分如铅和铬(VI)的洗脱物质。 汽车燃料容器材料包括钢板,在钢板表面的至少一侧上作为第一层的5-80g / m 2镀锌层,第二层为10g / m 2的镍镀层 层,不超过5g / m 2的后处理层。 后处理层通过涂覆部分还原的铬酸和还原性有机化合物形成,或者可以是作为下层的电解铬酸盐膜和作为上层的树脂。
摘要:
An image data recording method for recording, in an IC memory mounted in a film cartridge, image data of one or more desired frames on developed photographic film stored in the film cartridge is provided. The image data recording method comprises the steps of: determining the residual capacity of IC memory, changing the quantity of image data of one or more desired frames to be recorded in the IC memory or erasing the data recorded in the IC memory in accordance with the determined residual capacity of IC memory, and recording the image data of one or more desired frames in the residual capacity of the IC memory.