摘要:
Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.
摘要:
Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.
摘要:
According to one embodiment, an image processing apparatus includes following units. The correlation calculation unit calculates correlations between a first region and predetermined first basis vectors. The distance calculation unit calculates distances between the first region and second regions on a subspace generated by the second basis vectors selected from the first basis vectors. The feature quantity calculation unit calculates a feature quantity based on the correlations. The weight calculation unit calculates weights based on the distances and the feature quantity. The pixel value calculation unit calculates a weighted average of pixel values according to the weights to generate an output pixel value.
摘要:
A motion vector detection device includes: a matching error calculation part that calculates matching errors between a focus block and each of reference blocks; a least matching error calculation part calculating a least matching error from among the matching errors; a threshold calculation part calculating a threshold value; a correction vector calculation part calculating a correction vector from motion vectors detected in the reference blocks; and a motion vector determination part determining, as a motion vector for the focus block, a relative position vector in a block in which the relative position vector with respect to the focus block is the closest to the correction vector, the block being selected from among the reference blocks in which a difference between the plurality of matching errors and the least matching error is within the threshold value.
摘要:
Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath. The amplitude of deflection signals for the electron-beam-deflection and the rise and fall timings of the signals are suitably controlled according to inspection conditions.
摘要:
According to one embodiment, an apparatus includes a motion estimation unit, a generating unit, a detection unit, and a filtering unit. The motion estimation unit is configured to estimate a first motion vector from a first reference frame to a second reference frame. The generating unit is configured to assign a first pixel value and a second motion vector to an interpolation frame. The detection unit is configured to detect an occlusion region in the interpolation frame. The filtering unit is configured to assign the second motion vector to the occlusion region as a third motion vector, calculate degrees of difference between second pixel values derived from the second motion vectors and third pixel values derived from the third motion vectors, and assign a fourth pixel value derived from a fourth motion vector to the occlusion region, wherein the fourth motion vector is calculated based on the degrees of difference.
摘要:
According to one embodiment, a motion vector detection apparatus includes following units. The layering unit generates layers with different resolutions for each of first and second images. The first extraction unit extracts a space candidate vector. The second extraction unit extracts a time candidate vector. The third extraction unit extracts a layer candidate vector. The determination unit determines a motion vector to be assigned to the target block, based on correlations between the target block and blocks, the blocks being located in a layer which corresponds to the second image and being specified by assigning, to the target block, the space, time, and layer candidate vectors.
摘要:
A semiconductor wafer 11 is irradiated for scanning with a charged particle beam 6 so as to detect secondary charged particles 9 obtained from the wafer 11 as a result of the irradiation of the beam 6. A detected image of an inspection area obtained based on scanning information and on a detection signal derived from the secondary charged particles 9 is compared with a detected image of a reference area to find a difference therebetween. The difference is compared with a threshold value to detect a defect candidate. Defect information including positional information about the defect candidate is generated in such a manner as to include a relative position of a predetermined feature point within each of repeat patterns formed on the semiconductor wafer 11 with regard to the origin of a coordinate area established in each of these repeat patterns, and a relative position of the defect candidate with regard to the feature point. This contributes to providing a defect inspecting apparatus capable of determining defective areas for extraction by FIB more easily than before.
摘要:
High-speed inspection is performed with appropriate sensitivity according to the pattern density and pattern characteristic of a device.The pixel dimension used in image acquisition is changed in accordance with the pattern density of a device. An image is acquired at high speed by changing the beam scan speed and the stage drive speed in accordance with the pixel dimension and eliminating an error by controlling the amount of beam delay. The acquired image is so resampled that the image dimensions of the acquired image and a reference image are equally sized, and the acquired image and the reference image are then aligned with each other. The aligned images are resampled in accordance with a preset pixel dimension to extract a difference between the images with the sensitivity according to the pixel dimension.
摘要:
Provided are a high speed circuit pattern inspecting method and inspecting device which have a short preparation time for inspection and are capable of determining a defect by detecting only an image of one die. A coordinate which is expected to obtain the same pattern as a corresponding coordinate and an alignment coordinate are selected by referring to design information. The detected image and the design information are aligned using the alignment coordinate to correct the deviated amount and a pattern of the corresponding coordinate is compared with a pattern of the coordinate which is expected to obtain the same pattern to compare the patterns by detecting only an image of one die.