公开(公告)号：US06829134B2

公开(公告)日：2004-12-07

申请号：US10615009

申请日：2003-07-08

申请人： Makoto Yamauchi ,  Akihiro Shimizu ,  Kazuaki Kawabata ,  Hiroaki Taira ,  Hiroyuki Matsumoto

发明人： Makoto Yamauchi ,  Akihiro Shimizu ,  Kazuaki Kawabata ,  Hiroaki Taira ,  Hiroyuki Matsumoto

IPC分类号： H01G4005

CPC分类号： H01G4/012 ,  H01G4/232 ,  H01G4/30

摘要： A highly reliable monolithic ceramic capacitor which has no structural defect, e.g. peeling, and which is not susceptible to water from the outside and a method for manufacturing the same are provided. A lead portion of an internal electrode is configured to have a shape provided with a taper-shaped portion in which the width gradually decreases with increasing proximity to the end surface of a ceramic element, and the shape of the end portion opposite to the lead portion of the internal electrode is adjusted to be substantially rectangular. Regarding a pair of internal electrodes facing each other with the ceramic layer therebetween, the internal electrodes are laminated while the positions thereof are displaced with respect to each other in order that a corner portion in the substantially rectangular portion of one internal electrode are located in the vicinity of, but outside the taper-shaped portion of the other internal electrode.

公开(公告)号：US08774687B2

公开(公告)日：2014-07-08

申请号：US13599184

申请日：2012-08-30

申请人： Akihiro Shimizu ,  Keitaro Taoka

发明人： Akihiro Shimizu ,  Keitaro Taoka

IPC分类号： G03G15/01 ,  G03G15/00 ,  G03G15/16

CPC分类号： G03G15/1615 ,  G03G15/755 ,  G03G2215/00151 ,  G03G2215/0016

摘要： A belt driving apparatus includes: an endless belt having a stepped region at its edge; a driving member for driving the endless belt; a moving member for moving the endless belt in a widthwise direction; a mark provided at a part of the endless belt with respect to a circumferential direction and located at a position corresponding to the stepped region of the endless belt with respect to a rotational direction; a mark detecting member for detecting the mark during rotation of the endless belt; an edge position detecting member for detecting a widthwise position of at least one of edges of the endless belt during rotation; and a controller for controlling, after the mark detecting member detects the mark, the moving member on the basis of a detection result of the edge other than the stepped region of the endless belt.

摘要翻译： 带驱动装置包括：环形带，其边缘具有台阶区域; 用于驱动环形带的驱动构件; 移动构件，用于沿宽度方向移动所述环形带; 相对于圆周方向设置在环形带的一部分处的标记，并且位于相对于环形带的相对于旋转方向的阶梯状区域的位置; 标记检测构件，用于在环形带旋转期间检测标记; 边缘位置检测构件，用于在旋转期间检测环形带的至少一个边缘的宽度方向位置; 以及控制器，用于根据环形带的阶梯区域以外的边缘的检测结果，在标记检测部件检测到标记之后，控制移动部件。

公开(公告)号：US20130058687A1

公开(公告)日：2013-03-07

申请号：US13599184

申请日：2012-08-30

申请人： Akihiro Shimizu ,  Keitaro Taoka

发明人： Akihiro Shimizu ,  Keitaro Taoka

IPC分类号： G03G15/01

CPC分类号： G03G15/1615 ,  G03G15/755 ,  G03G2215/00151 ,  G03G2215/0016

摘要： A belt driving apparatus includes: an endless belt having a stepped region at its edge; a driving member for driving the endless belt; a moving member for moving the endless belt in a widthwise direction; a mark provided at a part of the endless belt with respect to a circumferential direction and located at a position corresponding to the stepped region of the endless belt with respect to a rotational direction; a mark detecting member for detecting the mark during rotation of the endless belt; an edge position detecting member for detecting a widthwise position of at least one of edges of the endless belt during rotation; and a controller for controlling, after the mark detecting member detects the mark, the moving member on the basis of a detection result of the edge other than the stepped region of the endless belt.

摘要翻译： 带驱动装置包括：环形带，其边缘具有台阶区域; 用于驱动环形带的驱动构件; 移动构件，用于沿宽度方向移动所述环形带; 相对于圆周方向设置在环形带的一部分处的标记，并且位于相对于环形带的相对于旋转方向的阶梯状区域的位置; 标记检测构件，用于在环形带旋转期间检测标记; 边缘位置检测构件，用于在旋转期间检测环形带的至少一个边缘的宽度方向位置; 以及控制器，用于根据环形带的阶梯区域以外的边缘的检测结果，在标记检测部件检测到标记之后，控制移动部件。

公开(公告)号：US08093681B2

公开(公告)日：2012-01-10

申请号：US13044260

申请日：2011-03-09

申请人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

发明人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

IPC分类号： H01L29/00 ,  H01L21/8234

CPC分类号： H01L27/11 ,  G11C11/412 ,  G11C11/4125 ,  H01L21/76895 ,  H01L27/0203 ,  H01L27/0207 ,  H01L27/1104 ,  Y10S257/904

摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

摘要翻译： 一种完整的CMOS型SRAM，其存储单元由六个MISFET组成，其中一对用于连接CMOS反相器的输入/输出端的局部布线由难熔金属硅化物层形成，该难熔金属硅化物层形成在构成个体的第一导电层上 存储单元的驱动MISFET，转移MISFET和负载MISFET的栅极电极，其中形成在局部布线上的参考电压线被布置成叠加在局部布线上以形成电容元件。 此外，通过在第一导电层上叠加局部布线，在局部布线和第一导电层之间形成电容元件。 此外，通过使用诸如硅化的电阻降低装置来形成局部布线。 此外，公开了用于降低转移MISFET的栅电极的电阻和用于形成局部布线的装置的手段。

公开(公告)号：US20110159653A1

公开(公告)日：2011-06-30

申请号：US13044652

申请日：2011-03-10

申请人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

发明人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

IPC分类号： H01L21/8234

CPC分类号： H01L27/11 ,  G11C11/412 ,  G11C11/4125 ,  H01L21/76895 ,  H01L27/0203 ,  H01L27/0207 ,  H01L27/1104 ,  Y10S257/904

摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

公开(公告)号：US20110053250A1

公开(公告)日：2011-03-03

申请号：US12935492

申请日：2009-03-31

申请人： Yoshimitsu Takakura ,  Masako Ichikawa ,  Kazuhiro Kondo ,  Akihiro Shimizu

发明人： Yoshimitsu Takakura ,  Masako Ichikawa ,  Kazuhiro Kondo ,  Akihiro Shimizu

IPC分类号： C12N7/02

CPC分类号： C12N15/1003 ,  C12N7/00 ,  C12N2710/16051 ,  G01N2333/36

摘要： The present invention provides a novel method that can increase readily a virus or viral vector concentration in a solution having a low concentration and a kit for performing the method. Conventional methods require complicated operations, expensive equipment, or highly trained experts for efficiently concentrating viruses from low-concentration virus solutions. The method of the present invention can concentrate viral vectors readily while maintaining infection abilities of the viral vectors, and thus it can be used as a safe and simple technique for concentrating a vector useful in the field of a genetic therapy or a vaccine therapy using a viral vector.

摘要翻译： 本发明提供一种可以容易地增加具有低浓度的溶液中的病毒或病毒载体浓度的新方法和用于进行该方法的试剂盒。 常规方法需要复杂的操作，昂贵的设备或受过高度训练的专家，以有效地集中低浓度病毒解决方案的病毒。 本发明的方法可以容易地集中病毒载体，同时保持病毒载体的感染能力，因此它可以用作一种安全和简单的技术，用于浓缩在遗传治疗或疫苗治疗领域中有用的载体，其使用 病毒载体。

公开(公告)号：US07705960B2

公开(公告)日：2010-04-27

申请号：US11987793

申请日：2007-12-04

申请人： Akihiro Shimizu ,  Masayuki Oto ,  Shuho Kobayashi

发明人： Akihiro Shimizu ,  Masayuki Oto ,  Shuho Kobayashi

IPC分类号： G02F1/1333

CPC分类号： H04N9/3141 ,  G02F1/133308 ,  G02F1/133512 ,  G02F2001/133388

摘要： A dust-proof glass is provided on a light incident surface of a transmission-type liquid crystal panel. The dust-proof glass includes: a reflection section which is provided at an outer edge of a light incident surface of the dust-proof glass; and a notch section which is formed at an outer edge of a light emitting surface of the dust-proof glass.

摘要翻译： 在透射型液晶面板的光入射面上设有防尘玻璃。 防尘玻璃包括：反射部，设置在防尘玻璃的光入射面的外缘; 以及形成在防尘玻璃的发光面的外缘的切口部。

公开(公告)号：US07411253B2

公开(公告)日：2008-08-12

申请号：US11641758

申请日：2006-12-20

申请人： Akihiro Shimizu ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

发明人： Akihiro Shimizu ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

IPC分类号： H01L27/092

CPC分类号： H01L29/7845 ,  H01L21/0217 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.

摘要翻译： 半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET， 第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力 的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。

公开(公告)号：US07397123B2

公开(公告)日：2008-07-08

申请号：US11765265

申请日：2007-06-19

申请人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

发明人： Shuji Ikeda ,  Toshiaki Yamanaka ,  Kenichi Kikushima ,  Shinichiro Mitani ,  Kazushige Sato ,  Akira Fukami ,  Masaya Iida ,  Akihiro Shimizu

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L27/11 ,  G11C11/412 ,  G11C11/4125 ,  H01L21/76895 ,  H01L27/0203 ,  H01L27/0207 ,  H01L27/1104 ,  Y10S257/904

摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

摘要翻译： 一种完整的CMOS型SRAM，其存储单元由六个MISFET组成，其中一对用于连接CMOS反相器的输入/输出端的局部布线由难熔金属硅化物层形成，该难熔金属硅化物层形成在构成个体的第一导电层上 存储单元的驱动MISFET，转移MISFET和负载MISFET的栅极电极，其中形成在局部布线上的参考电压线被布置成叠加在局部布线上以形成电容元件。 此外，通过在第一导电层上叠加局部布线，在局部布线和第一导电层之间形成电容元件。 此外，通过使用诸如硅化的电阻降低装置来形成局部布线。 此外，公开了用于降低转移MISFET的栅电极的电阻和用于形成局部布线的装置的手段。

公开(公告)号：US07362982B2

公开(公告)日：2008-04-22

申请号：US11550641

申请日：2006-10-18

申请人： Takashi Fujita ,  Akihiro Shimizu

发明人： Takashi Fujita ,  Akihiro Shimizu

IPC分类号： G03G15/00

CPC分类号： G03G15/2064 ,  G03G15/6594 ,  G03G21/1647 ,  G03G2215/00481 ,  G03G2215/00738 ,  G03G2215/00755 ,  G03G2215/2045

摘要： An image forming apparatus has an image forming unit together with a fixing unit which uses two rotating members to form a nip in which the recording material with an unfixed image is fed. A driving unit drives the rotatable fixing members and a flywheel is used for increasing an inertial force of that drive, there also being a connecting device which selectively connects the flywheel with the driving unit together with a switching device that switches operation of that connecting device in accordance with the type of recording material being used or the density of the image to be printed.

摘要翻译： 图像形成装置具有图像形成单元以及定影单元，该定影单元使用两个旋转构件来形成其中馈送有未定影图像的记录材料的辊隙。 驱动单元驱动可旋转的固定构件，并且飞轮用于增加该驱动器的惯性力，还存在连接装置，其将飞轮与驱动单元一起连接到切换装置，该切换装置将该连接装置的操作切换到 根据所使用的记录材料的类型或要打印的图像的浓度。