公开(公告)号：US08593307B2

公开(公告)日：2013-11-26

申请号：US13364787

申请日：2012-02-02

申请人： Man-keun Seo ,  Jun-jin Kong ,  Hong-rak Son ,  Kyoung-Lae Cho ,  Je-hyuck Song ,  Kwang-gu Lee

发明人： Man-keun Seo ,  Jun-jin Kong ,  Hong-rak Son ,  Kyoung-Lae Cho ,  Je-hyuck Song ,  Kwang-gu Lee

IPC分类号： H03M7/40

CPC分类号： H03M7/40

摘要： At least one example embodiment discloses a method of compressing data in a storage device. The method includes determining a codeword length of a symbol using a first table indicating a relationship between a number of occurrences of the symbol in received data and the codeword length, determining a codeword having the codeword length for the symbol, and generating compressed data of the received data, the generating including converting the symbol into the codeword.

摘要翻译： 至少一个示例性实施例公开了一种在存储设备中压缩数据的方法。 该方法包括使用指示接收数据中的符号的出现次数与码字长度之间的关系的第一表来确定符号的码字长度，确定具有用于符号的码字长度的码字，以及生成 接收到的数据，生成包括将符号转换成码字。

公开(公告)号：US20110320689A1

公开(公告)日：2011-12-29

申请号：US13159075

申请日：2011-06-13

申请人： Kyoung Lae Cho ,  Jun-jin Kong ,  Hong-rak Son ,  Seong-hyeong Choi

发明人： Kyoung Lae Cho ,  Jun-jin Kong ,  Hong-rak Son ,  Seong-hyeong Choi

IPC分类号： G06F12/00 ,  G06F12/10

CPC分类号： G06F12/0246 ,  G06F2212/7201

摘要： Methods of operating integrated circuit devices include updating a mapping table with physical address information by reading forward link information from a plurality of spare sectors in a corresponding plurality of pages within a nonvolatile memory device and then writing mapping table information derived from the forward link information into the mapping table. This forward link information may be configured as absolute address information (e.g., next physical address) and/or relative address information (e.g., change in physical address). This updating of the mapping table may include updating a mapping table within a volatile memory, in response to a resumption of power within the integrated circuit device. This resumption of power may follow a power failure during which the contents of the volatile memory are lost.

摘要翻译： 操作集成电路设备的方法包括：通过从非易失性存储器件内的相应多个页面中的多个备用扇区读取前向链路信息，然后将从前向链路信息导出的映射表信息写入到 映射表。 该前向链路信息可以被配置为绝对地址信息（例如，下一个物理地址）和/或相对地址信息（例如，物理地址的改变）。 映射表的这种更新可以包括响应于集成电路设备内的恢复功率而更新易失性存储器内的映射表。 这种恢复电源可能会在易失性存储器的内容丢失的情况下发生电源故障。

公开(公告)号：US20120216096A1

公开(公告)日：2012-08-23

申请号：US13396791

申请日：2012-02-15

申请人： Man-keun Seo ,  Jun-jin Kong ,  Kyoung-Lae Cho

发明人： Man-keun Seo ,  Jun-jin Kong ,  Kyoung-Lae Cho

IPC分类号： H03M13/05 ,  G06F11/10

CPC分类号： H03M13/2906 ,  G06F11/1012 ,  G06F11/1044 ,  H03M7/30 ,  H03M13/05 ,  H03M13/6312

摘要： A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.

摘要翻译： 存储器装置和存储器系统，所述存储器系统包括用于通过压缩第一单元中的程序数据产生压缩数据的数据压缩器，以及用于在第二单元中分割压缩数据的纠错块发生器，以获得多个 正常数据和生成用于校正多条正常数据的错误的纠错块，其中每个纠错块包括正常数据，具有与正常数据的大小相对应的大小的无效数据，以及用于 正常数据和无效数据。

公开(公告)号：US08949687B2

公开(公告)日：2015-02-03

申请号：US13396791

申请日：2012-02-15

申请人： Man-keun Seo ,  Jun-jin Kong ,  Kyoung-Lae Cho

发明人： Man-keun Seo ,  Jun-jin Kong ,  Kyoung-Lae Cho

IPC分类号： G11C29/00 ,  H03M7/30 ,  H03M13/05 ,  G06F11/10

CPC分类号： H03M13/2906 ,  G06F11/1012 ,  G06F11/1044 ,  H03M7/30 ,  H03M13/05 ,  H03M13/6312

摘要： A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.

摘要翻译： 存储器装置和存储器系统，所述存储器系统包括用于通过压缩第一单元中的程序数据产生压缩数据的数据压缩器，以及用于在第二单元中分割压缩数据的纠错块发生器，以获得多个 正常数据和生成用于校正多条正常数据的错误的纠错块，其中每个纠错块包括正常数据，具有与正常数据的大小相对应的大小的无效数据，以及用于 正常数据和无效数据。

公开(公告)号：US20110038207A1

公开(公告)日：2011-02-17

申请号：US12856698

申请日：2010-08-16

申请人： Hee-seok Eun ,  Jong-han Kim ,  Jae-hong Kim ,  Dong-hyuk Chae ,  Seung-hwan Song ,  Han-woong Yoo ,  Jun-jin Kong ,  Young-hwan Lee ,  Kyoung-lae Cho ,  Yong-june Kim

发明人： Hee-seok Eun ,  Jong-han Kim ,  Jae-hong Kim ,  Dong-hyuk Chae ,  Seung-hwan Song ,  Han-woong Yoo ,  Jun-jin Kong ,  Young-hwan Lee ,  Kyoung-lae Cho ,  Yong-june Kim

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642

摘要： The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through Nth bits of data in a memory cell array of the N-bit MLC flash memory device or reads the first through Nth bits of the data from the memory cell array in response to one of a program command and a read command. The bit level conversion control logic circuit, after the first through Nth bits of the data are completely programmed or read, programs or reads an (N+1)th bit of the data in response to a control signal. The bit level conversion control logic circuit converts voltage levels of voltages, which are used for programming or reading the first through Nth bits of the data, to program or read for 2N cell distributions of 2N+1 cell distributions corresponding to the (N+1)th bit of the data and then programs or reads for other 2N cell distributions.

摘要翻译： 闪存器件包括控制逻辑电路和位电平转换逻辑电路。 控制逻辑电路对N位MLC闪速存储器件的存储单元阵列中的第一至第N位数据进行编程，或响应于程序命令和程序命令之一从存储单元阵列中读取数据的第一至第N位 读命令。 在数据的第一至第N位被完全编程或读取之后，位电平转换控制逻辑电路响应于控制信号编程或读取数据的第（N + 1）位。 位电平转换控制逻辑电路转换用于编程或读取数据的第一至第N位的电压电平，以对与第（N + 1）个对应的2N + 1个单元分布的2N个单元分布进行编程或读取 ）位，然后编程或读取其他2N个单元分布。

公开(公告)号：US20080285352A1

公开(公告)日：2008-11-20

申请号：US12010481

申请日：2008-01-25

申请人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

发明人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5642

摘要： Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.

摘要翻译： 提供了一种将数据写入/从存储单元读取数据的方法和使用不同代码进行写入和读取操作的页面缓冲器。 对具有多个阈值电压分布的存储单元写入/读取数据的方法包括数据写入操作和数据读取操作。 在数据写入操作中，通过使用与阈值电压分布对应的多个写入代码，将具有多个位的数据写入存储单元。 在数据读取操作中，通过使用与阈值电压分布中的阈值电压分布相对应的读取代码，从存储单元读取具有多个位的数据。 在将数据写入/从存储单元读取的方法中，写入代码的一部分与读取代码的相应部分不同。

公开(公告)号：US20080285343A1

公开(公告)日：2008-11-20

申请号：US12081568

申请日：2008-04-17

申请人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

发明人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

IPC分类号： G11C16/04 ,  G11C8/00

CPC分类号： H01L29/7883 ,  G11C16/10

摘要： Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ith bit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1th bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.

摘要翻译： 提供了一种存储器单元编程方法和半导体器件，其可以能够同时将数据位和数据的另一位写入多个存储块。 其中将M位数据写入多个存储块的存储器编程方法可以包括数据分割操作和数据写入操作，其中M可以是自然数。 在数据划分操作中，多个存储块可以被划分为多个存储块组。 在数据写入操作中，数据的第i / O位可以被同时写入到多个存储块组之中的两个或更多个存储块组，然后i + 1＆lt; / SUP>位可以从多个存储块组中的两个或更多个存储块组同时写入，其中i是小于M的自然数。

公开(公告)号：US08339846B2

公开(公告)日：2012-12-25

申请号：US12856698

申请日：2010-08-16

申请人： Hee-seok Eun ,  Jong-han Kim ,  Jae-hong Kim ,  Dong-hyuk Chae ,  Seung-hwan Song ,  Han-woong Yoo ,  Jun-jin Kong ,  Young-hwan Lee ,  Kyoung-lae Cho ,  Yong-june Kim

发明人： Hee-seok Eun ,  Jong-han Kim ,  Jae-hong Kim ,  Dong-hyuk Chae ,  Seung-hwan Song ,  Han-woong Yoo ,  Jun-jin Kong ,  Young-hwan Lee ,  Kyoung-lae Cho ,  Yong-june Kim

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642

摘要： The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through Nth bits of data in a memory cell array of the N-bit MLC flash memory device or reads the first through Nth bits of the data from the memory cell array in response to one of a program command and a read command. The bit level conversion control logic circuit, after the first through Nth bits of the data are completely programmed or read, programs or reads an (N+1)th bit of the data in response to a control signal. The bit level conversion control logic circuit converts voltage levels of voltages, which are used for programming or reading the first through Nth bits of the data, to program or read for 2N cell distributions of 2N+1 cell distributions corresponding to the (N+1)th bit of the data and then programs or reads for other 2N cell distributions.

摘要翻译： 闪存器件包括控制逻辑电路和位电平转换逻辑电路。 控制逻辑电路对N位MLC闪速存储器件的存储单元阵列中的第一至第N位数据进行编程，或响应于程序命令和程序命令之一从存储单元阵列中读取数据的第一至第N位 读命令。 在数据的第一至第N位被完全编程或读取之后，位电平转换控制逻辑电路响应于控制信号编程或读取数据的第（N + 1）位。 位电平转换控制逻辑电路转换用于编程或读取数据的第一至第N位的电压电平，以对与第（N + 1）个对应的2N + 1个单元分布的2N个单元分布进行编程或读取 ）位，然后编程或读取其他2N个单元分布。

公开(公告)号：US07911842B2

公开(公告)日：2011-03-22

申请号：US12081568

申请日：2008-04-17

申请人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

发明人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

IPC分类号： G11C16/04

CPC分类号： H01L29/7883 ,  G11C16/10

摘要： Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ith bit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1th bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.

摘要翻译： 提供了一种存储器单元编程方法和半导体器件，其可以能够同时将数据位和数据的另一位写入多个存储块。 其中将M位数据写入多个存储块的存储器编程方法可以包括数据分割操作和数据写入操作，其中M可以是自然数。 在数据划分操作中，多个存储块可以被划分为多个存储块组。 在数据写入操作中，数据的第i位可以从多个存储器块组中同时写入两个或更多个存储块组，然后数据的第i + 1位可以被同时写入两个或更多个 多个存储块组中的存储块组，其中i是小于M的自然数。

公开(公告)号：US07729175B2

公开(公告)日：2010-06-01

申请号：US12010481

申请日：2008-01-25

申请人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

发明人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5642

摘要： Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.

摘要翻译： 提供了一种将数据写入/从存储单元读取数据的方法和使用不同代码进行写入和读取操作的页面缓冲器。 对具有多个阈值电压分布的存储单元写入/读取数据的方法包括数据写入操作和数据读取操作。 在数据写入操作中，通过使用与阈值电压分布对应的多个写入代码，将具有多个位的数据写入存储单元。 在数据读取操作中，通过使用与阈值电压分布中的阈值电压分布相对应的读取代码，从存储单元读取具有多个位的数据。 在将数据写入/从存储单元读取的方法中，写入代码的一部分与读取代码的相应部分不同。