公开(公告)号：US6039038A

公开(公告)日：2000-03-21

申请号：US16005

申请日：1998-01-30

申请人： Manfred Buck ,  Wolfgang Brost ,  Robert Handschuh ,  Helmut Kratt

发明人： Manfred Buck ,  Wolfgang Brost ,  Robert Handschuh ,  Helmut Kratt

IPC分类号： B23B45/14 ,  B23B47/00 ,  B25H1/00 ,  B28D5/04

CPC分类号： B25H1/0078

摘要： A drilling assisting device for a drill used for diamond drilling, has a supporting element, a unit for mounting on a drill arranged on the supporting element at a machine side, a support part for supporting the drill on a surface to be treated and also mounted on the supporting element at a tool side, the unit for mounting on the drill having a carriage, a dove-tail unit for setting the carriage on the drill, and a bolt unit mounting the carriage on the drill.

摘要翻译： 一种用于金刚石钻孔的钻头的钻孔辅助装置，具有支撑元件，用于安装在设置在机器侧的支撑元件上的钻头上的单元，用于将钻头支撑在被处理表面上并且还安装 在工具侧的支撑元件上，用于安装在具有滑架的钻头上的单元，用于将滑架设置在钻头上的鸠尾单元以及将滑架安装在钻头上的螺栓单元。

公开(公告)号：US06559075B1

公开(公告)日：2003-05-06

申请号：US09283907

申请日：1999-04-01

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L2126

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US20060040468A1

公开(公告)日：2006-02-23

申请号：US11244802

申请日：2005-10-06

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/30 ,  H01L21/302

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

摘要翻译： 一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。 生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。 通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。 半导体主体连接到支撑材料。

公开(公告)号：US07713840B2

公开(公告)日：2010-05-11

申请号：US12075599

申请日：2008-03-11

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

摘要翻译： 选自由半导体层，半导体层序列或半导体层结构组成的组的半导体本体。 半导体主体通过以下方式从生长衬底转移到支撑材料：通过将半导体本体和生长衬底之一暴露于生长衬底和半导体本体之间的界面或者在所述界面附近的区域暴露于电磁辐射; 通过吸收靠近或在所述界面处的电磁辐射来分解在所述界面处或附近的材料，使得半导体主体可以与生长衬底分离; 并将半导体本体连接到支撑材料上。

公开(公告)号：US06974758B2

公开(公告)日：2005-12-13

申请号：US10673962

申请日：2003-09-29

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L21/78 ,  H01L21/76

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US06740604B2

公开(公告)日：2004-05-25

申请号：US10324848

申请日：2002-12-20

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L2126

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US20080164571A1

公开(公告)日：2008-07-10

申请号：US12075599

申请日：2008-03-11

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L29/20

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

摘要翻译： 选自由半导体层，半导体层序列或半导体层结构组成的组的半导体本体。 半导体主体通过以下方式从生长衬底转移到支撑材料：通过将半导体本体和生长衬底之一暴露于生长衬底和半导体本体之间的界面或者在所述界面附近的区域暴露于电磁辐射; 通过吸收靠近或在所述界面处的电磁辐射来分解在所述界面处或附近的材料，使得半导体主体可以与生长衬底分离; 并将半导体本体连接到支撑材料上。

公开(公告)号：US07341925B2

公开(公告)日：2008-03-11

申请号：US11244802

申请日：2005-10-06

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

摘要翻译： 一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。 生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。 通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。 半导体主体连接到支撑材料。