公开(公告)号：US06559075B1

公开(公告)日：2003-05-06

申请号：US09283907

申请日：1999-04-01

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L2126

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US20060040468A1

公开(公告)日：2006-02-23

申请号：US11244802

申请日：2005-10-06

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/30 ,  H01L21/302

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

摘要翻译： 一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。 生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。 通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。 半导体主体连接到支撑材料。

公开(公告)号：US07713840B2

公开(公告)日：2010-05-11

申请号：US12075599

申请日：2008-03-11

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

摘要翻译： 选自由半导体层，半导体层序列或半导体层结构组成的组的半导体本体。 半导体主体通过以下方式从生长衬底转移到支撑材料：通过将半导体本体和生长衬底之一暴露于生长衬底和半导体本体之间的界面或者在所述界面附近的区域暴露于电磁辐射; 通过吸收靠近或在所述界面处的电磁辐射来分解在所述界面处或附近的材料，使得半导体主体可以与生长衬底分离; 并将半导体本体连接到支撑材料上。

公开(公告)号：US06974758B2

公开(公告)日：2005-12-13

申请号：US10673962

申请日：2003-09-29

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L21/78 ,  H01L21/76

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US06740604B2

公开(公告)日：2004-05-25

申请号：US10324848

申请日：2002-12-20

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L2126

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.

摘要翻译： 将两层材料彼此分开的方法，使得两层分离的材料层基本上完全保留。 要分离材料层的两层材料之间的界面或界面附近的区域通过两层材料之一暴露于电磁辐射。 电磁辐射在界面处或界面附近的区域被吸收，并且吸收的辐射能量在界面处引起材料的分解。

公开(公告)号：US20080164571A1

公开(公告)日：2008-07-10

申请号：US12075599

申请日：2008-03-11

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L29/20

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/977 ,  H01L2924/00

摘要： A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

摘要翻译： 选自由半导体层，半导体层序列或半导体层结构组成的组的半导体本体。 半导体主体通过以下方式从生长衬底转移到支撑材料：通过将半导体本体和生长衬底之一暴露于生长衬底和半导体本体之间的界面或者在所述界面附近的区域暴露于电磁辐射; 通过吸收靠近或在所述界面处的电磁辐射来分解在所述界面处或附近的材料，使得半导体主体可以与生长衬底分离; 并将半导体本体连接到支撑材料上。

公开(公告)号：US07341925B2

公开(公告)日：2008-03-11

申请号：US11244802

申请日：2005-10-06

申请人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

发明人： Michael Kelly ,  Oliver Ambacher ,  Martin Stutzmann ,  Martin Brandt ,  Roman Dimitrov ,  Robert Handschuh

IPC分类号： H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/81 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

摘要翻译： 一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。 生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。 通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。 半导体主体连接到支撑材料。

公开(公告)号：US20180361579A1

公开(公告)日：2018-12-20

申请号：US15990721

申请日：2018-05-28

申请人： Michael Kelly

发明人： Michael Kelly

IPC分类号： B25J9/16 ,  B25J19/00 ,  G06F17/50

摘要： Articulated assemblies are all around us in nature as well as within the artificial environments and artificial systems we create. Computer based simulations are used to view, analyze, and modify motion specifications and sequences for articulated assemblies in the generation of avatars for multimedia and designing robotic/android systems. Articulated assembly specifications along with terrain and physical laws are employed in establishing an actuation and motion sequence for the assembly. However, other factors such as emotion, state of mind, etc. impact how the assembly actually moves and the physical aspect of the assembly. Embodiments of the invention allow for management of cyclic and acyclic elements to the overall motion through graphical user interfaces as well as the rapid establishment of new motion models through fractional combination of existing motion models as well as the association of a motion model to multiple articulated assemblies allowing simulations of herds, crowds etc.

公开(公告)号：US09712771B2

公开(公告)日：2017-07-18

申请号：US15178439

申请日：2016-06-09

申请人： Michael Kelly ,  Daniel Mooney ,  Curtis Colonero ,  Robert Berger ,  Lawrence Candell

发明人： Michael Kelly ,  Daniel Mooney ,  Curtis Colonero ,  Robert Berger ,  Lawrence Candell

IPC分类号： H03M1/12 ,  H04N5/3745 ,  H03M1/14 ,  H03M1/60 ,  H04N5/335 ,  H04N5/378

CPC分类号： H04N5/37455 ,  H03M1/12 ,  H03M1/145 ,  H03M1/60 ,  H04N5/3355 ,  H04N5/378

摘要： Autonomously operating analog to digital converters are formed into a two dimensional array. The array may incorporate digital signal processing functionality. Such an array is particularly well-suited for operation as a readout integrated circuit and in combination with a sensor array, forms a digital focal plane array.

公开(公告)号：US09491389B2

公开(公告)日：2016-11-08

申请号：US14221429

申请日：2014-03-21

申请人： Michael Kelly ,  Brian Tyrrell ,  Curtis Colonero ,  Robert Berger ,  Kenneth Schultz ,  James Wey ,  Daniel Mooney ,  Lawrence Candell

发明人： Michael Kelly ,  Brian Tyrrell ,  Curtis Colonero ,  Robert Berger ,  Kenneth Schultz ,  James Wey ,  Daniel Mooney ,  Lawrence Candell

IPC分类号： H04N5/913 ,  H04N5/378 ,  G11B20/00 ,  H04N5/77 ,  H04N21/4223 ,  H04N21/4408 ,  G09C1/00 ,  H04L9/06 ,  H04L9/12 ,  H04N5/33

CPC分类号： H04N5/378 ,  G06F21/602 ,  G09C1/00 ,  G11B20/00086 ,  G11B20/0021 ,  H04L9/0631 ,  H04L9/0637 ,  H04L9/12 ,  H04L2209/12 ,  H04L2209/805 ,  H04N5/33 ,  H04N5/772 ,  H04N5/913 ,  H04N21/4223 ,  H04N21/4408 ,  H04N2005/91364

摘要： A digital focal plane array includes an all-digital readout integrated circuit in combination with a detector array. The readout circuit includes unit cell electronics, orthogonal transfer structures, and data handling structures. The unit cell electronics include an analog to digital converter. Orthogonal transfer structures enable the orthogonal transfer of data among the unit cells. Data handling structures may be configured to operate the digital focal plane array as a data encryptor/decipherer. Data encrypted and deciphered by the digital focal plane array need not be image data.

摘要翻译： 数字焦平面阵列包括与检测器阵列组合的全数字读出集成电路。 读出电路包括单元电路，正交传输结构和数据处理结构。 单元电池包括模数转换器。 正交传输结构使得能够在单位单元之间进行数据的正交传输。 数据处理结构可以被配置为操作数字焦平面阵列作为数据加密器/解密器。 由数字焦平面阵列加密和解密的数据不需要是图像数据。