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    Reducing Line Edge Roughness by Particle Beam Exposure
    3.
    发明申请
    Reducing Line Edge Roughness by Particle Beam Exposure 审中-公开
    通过粒子束曝光降低线边缘粗糙度

    公开(公告)号：US20100096566A1

    公开(公告)日：2010-04-22

    申请号：US12254756

    申请日：2008-10-20

    申请人： Robert Bristol ,  David Ruzic ,  Corey Struck

    发明人： Robert Bristol ,  David Ruzic ,  Corey Struck

    IPC分类号： A61N5/00

    CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/317 ,  H01J2237/3174

    摘要： Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate, aligning the one or more line structures to a beam path of a particle beam such that particles of the particle beam travel within 45 degrees of parallel to a lengthwise direction of the one or more line structures, and exposing the one or more line structures to the particle beam to reduce line edge roughness of the one or more line structures wherein an incident angle of the particle beam to the surface of the semiconductor substrate is between about 45 degrees and about 90 degrees, where 0 degrees is normal to the surface of the semiconductor substrate.

    摘要翻译： 通常描述通过粒子束曝光来减少线边缘粗糙度。 在一个示例中，一种方法包括在半导体衬底的表面上形成一个或多个线结构，将一个或多个线结构对准粒子束的束路径，使得粒子束的粒子在平行于 所述一个或多个线结构的长度方向，并且将所述一个或多个线结构暴露于所述粒子束以减小所述一个或多个线结构的线边缘粗糙度，其中所述粒子束与所述半导体衬底的表面的入射角 在约45度和约90度之间，其中0度垂直于半导体衬底的表面。

    Optics for extreme ultraviolet lithography
    7.
    发明申请
    Optics for extreme ultraviolet lithography 失效
    极光紫外光刻光学

    公开(公告)号：US20060000985A1

    公开(公告)日：2006-01-05

    申请号：US10883048

    申请日：2004-06-30

    申请人： Manish Chandhok ,  Bryan Rice ,  Robert Bristol

    发明人： Manish Chandhok ,  Bryan Rice ,  Robert Bristol

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70175 ,  G03F7/70033 ,  G21K1/06

    摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.

    摘要翻译： 根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。 诸如源等离子体的光源位于圆的中心。 圆弧上设有几个镜片段。 镜片段可以被布置成使得由光源产生的光在被反射之后被准直。 光源可以是能够产生EUV光子的源等离子体。

    Erosion resistance of EUV source electrodes
    9.
    发明申请
    Erosion resistance of EUV source electrodes 有权
    EUV源电极的耐腐蚀性

    公开(公告)号：US20050031502A1

    公开(公告)日：2005-02-10

    申请号：US10638261

    申请日：2003-08-07

    申请人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan Rice

    发明人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan Rice

    IPC分类号： B01J19/08 ,  H05G2/00

    CPC分类号： H05G2/003

    摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

    摘要翻译： 可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。 沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。 电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。 电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。

    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system
    10.
    发明申请
    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system 有权
    防止EUV光刻系统中反射镜和电极的锡污染的技术

    公开(公告)号：US20050244572A1

    公开(公告)日：2005-11-03

    申请号：US10835867

    申请日：2004-04-29

    申请人： Robert Bristol ,  Bryan Rice ,  Ming Fang ,  John Barnak ,  Melissa Shell

    发明人： Robert Bristol ,  Bryan Rice ,  Ming Fang ,  John Barnak ,  Melissa Shell

    IPC分类号： B32B15/04 ,  C23C14/08 ,  C23C14/16 ,  G03F7/20 ,  G21K1/06 ,  H05H1/00

    CPC分类号： G03F7/70958 ,  C23C14/083 ,  C23C14/165 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/067

    摘要： Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.

    摘要翻译： 钝化涂层和吸气剂可以用于使用锡（Sn）蒸气作为等离子体“燃料”的极紫外（EUV）源，以防止污染和相应的锡污染引起的反射率的损失。 钝化涂层可以是锡不粘附的材料，并且可以放置在源室中的反射表面上。 吸气剂可以是与锡强烈反应的材料，并且可以放置在集电镜和/或非反射表面之外。 也可以在源电极的阳极和阴极之间的绝缘体上提供钝化涂层，以防止由于涂覆绝缘体表面的锡而导致短路。