-
公开(公告)号：US06919594B2
公开(公告)日：2005-07-19
申请号：US10696991
申请日：2003-10-30
IPC分类号： H01L27/105 , G11C11/16 , H01L21/8246 , H01L43/08 , H01L29/76
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译： 公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。 该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。
-
公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译： 公开了磁存储器件。 在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及 与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。
-
公开(公告)号：US06794695B2
公开(公告)日：2004-09-21
申请号：US10135241
申请日：2002-04-29
IPC分类号： H01L2976
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译： 公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。 该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。
-
公开(公告)号：US06597049B1
公开(公告)日：2003-07-22
申请号：US10132998
申请日：2002-04-25
IPC分类号： H01L2348
CPC分类号： H01L27/222 , G11C11/16 , H01L43/08
摘要： A conductor structure for a magnetic memory is disclosed. The conductor structure includes one or more conductors that have a width that is less than a dimension of a memory cell in a direction the conductor crosses the memory cell. A thickness of the conductor is preselected to reduce a cross-sectional area of the conductor and increase a current density within the conductor. A magnetic field sufficient to rotate an alterable orientation of magnetization in a data layer of the memory cell can be generated by a reduced magnitude of a current flowing in the conductor due to the increased current density. Alternatively, the magnitude of the current can be reduced by increasing a thickness of the conductor to increase its area and reduce its resistance to the flow of electrons and partially cladding the conductor to reduce a total magnetic path around the conductor thereby increasing the magnetic field.
摘要翻译： 公开了一种用于磁存储器的导体结构。 导体结构包括一个或多个导体，其宽度小于存储单元在导体与存储单元交叉的方向上的尺寸。 预先选择导体的厚度以减小导体的横截面积并增加导体内的电流密度。 由于增加的电流密度，可以通过在导体中流动的电流的幅度减小来产生足以旋转存储器单元的数据层中的可变取向磁化的磁场。 或者，可以通过增加导体的厚度以增加其面积并降低其对电子流的阻力并部分地包覆导体以减小导体周围的总磁路，从而增加磁场来减小电流的大小。
-
公开(公告)号：US20050195649A1
公开(公告)日：2005-09-08
申请号：US11112815
申请日：2005-04-21
申请人： Janice Nickel , Manoj Bhattacharyya
发明人： Janice Nickel , Manoj Bhattacharyya
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616
摘要： A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
摘要翻译： 磁存储单元包括第一磁阻装置和第二磁阻装置。 第一磁阻装置具有第一感测层。 第二磁阻装置与第一磁阻装置串联连接。 第二磁阻装置具有第二感测层。 至少一个控制的成核位置放置在第一感测层和第二感测层中的至少一个上。
-
公开(公告)号：US20050104146A1
公开(公告)日：2005-05-19
申请号：US10713510
申请日：2003-11-14
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.
摘要翻译： 公开了薄膜装置及其中提供热辅助的方法。 因此，使用加热器材料来热辅助薄膜器件的操作。 通过利用加热材料热辅助薄膜器件的操作，实现了薄膜器件的精度和性能的显着提高。 本发明的第一方面是一种薄膜器件。 所述薄膜器件包括至少一个图案化薄膜层，耦合到所述至少一个图案化薄膜层的加热器材料，用于向所述图案化薄膜层中的至少一个提供热辅助，以及耦合到所述加热器材料的导体， 向加热器材料供应能量。
-
公开(公告)号：US06867468B2
公开(公告)日：2005-03-15
申请号：US10440279
申请日：2003-05-15
申请人： Manish Sharma , Manoj Bhattacharyya
发明人： Manish Sharma , Manoj Bhattacharyya
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.
摘要翻译： 磁存储器阵列包括多个磁存储器单元，与至少一个磁存储单元相邻设置的磁屏蔽，以减小相对于另一个磁存储单元的磁干扰;以及绝缘体，其被设置为至少分离 来自至少一个磁存储单元的部分磁屏蔽。 磁屏蔽可以是嵌入绝缘体中的磁屏蔽层，图案化磁屏蔽材料和/或磁性颗粒。
-
公开(公告)号：US20050169059A1
公开(公告)日：2005-08-04
申请号：US10767428
申请日：2004-01-29
IPC分类号： G11C11/15 , G11C5/00 , G11C7/00 , G11C11/16 , G11C29/00 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/1673 , G11C11/1675 , G11C29/021 , G11C29/028 , G11C29/24 , G11C29/50008 , G11C2029/5002 , G11C2029/5006
摘要： A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the write current exceeds a first threshold, and a second MRAM test cell receiving the write current and sensing when the write current exceeds a second threshold.
摘要翻译： 磁存储单元写入电流阈值检测器。 磁存储单元写入电流阈值检测器包括第一MRAM测试单元，其接收写入电流并检测写入电流是否超过第一阈值;以及第二MRAM测试单元接收写入电流并感测写入电流超过第二阈值时。
-
9.发明授权公开(公告)号：US06905888B2
公开(公告)日：2005-06-14
申请号：US10676414
申请日：2003-09-30
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L21/00
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 在一些实施方案中，成核位点可以是数据层中的裂缝或来自数据层的突起。 磁性随机存取存储器（“MRAM”）器件可以包括具有受控成核位点的数据层的磁存储元件阵列。
-
公开(公告)号：US20050111254A1
公开(公告)日：2005-05-26
申请号：US11021268
申请日：2004-12-23
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.
-
-
-
-
-
-
-
-
-
搜索结果
35 条记录 (耗时 0.019 秒)
